PHILIPS BU505F

DISCRETE SEMICONDUCTORS
DATA SHEET
BU505F; BU505DF
Silicon diffused power transistors
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
The BU505DF has an integrated
efficiency diode.
2
2
• Horizontal deflection circuits of
colour television receivers.
MBB008
3
MBB077
a. BU505F.
PINNING
1
PIN
2
3
b. BU505DF.
3
DESCRIPTION
1
base
2
collector
3
emitter
mb
1
1
APPLICATIONS
Front view
mounting base; electrically
isolated from all pins
MBC668
Fig.1 Simplified outline (SOT186) and symbols.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
collector-emitter peak voltage
VBE = 0
−
1500
V
VCEO
collector-emitter voltage
open base
−
700
V
VCEsat
collector-emitter saturation
voltage
IC = 2 A; IB = 900 mA; see Fig.8
−
1
V
VF
diode forward voltage
(BU505DF)
IF = 2 A
−
1.8
V
ICsat
collector saturation current
−
2
A
IC
collector current (DC)
see Figs 4 and 5
−
2.5
A
ICM
collector current (peak value)
see Figs 4 and 5
−
4
A
Ptot
total power dissipation
Th ≤ 25 °C; see Fig.2
−
20
W
tf
fall time
inductive load; see Fig.10
0.7
−
µs
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to external heatsink note 1
6.35
K/W
note 2
3.85
K/W
55
K/W
thermal resistance from junction to ambient
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
VisolM
isolation voltage from all terminals to external heatsink (peak value)
−
1500
V
Cisol
isolation capacitance from collector to external heatsink
12
−
pF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter peak voltage
VBE = 0
−
1500
open base
−
700
V
−
2
A
V
VCEO
collector-emitter voltage
ICsat
collector saturation current
IC
collector current (DC)
see Figs 4 and 5
−
2.5
A
ICM
collector current (peak value)
see Figs 4 and 5
−
4
A
IB
base current (DC)
−
2
A
IBM
base current (peak value)
−
4
A
Ptot
total power dissipation
−
20
W
Tstg
storage temperature
Th ≤ 25 °C; see Fig.2
−65
+150
°C
Tj
junction temperature
−
150
°C
MGK674
MGB875
102
handbook, halfpage
120
handbook,
halfpage
Ptot max
hFE
(%)
80
(1)
10
(2)
40
0
0
50
100
Th (oC)
1
10−2
150
10−1
1
IC (A)
Tj = 25 °C.
(1) VCE = 5 V.
(2) VCE = 1 V.
Fig.2 Power derating curve.
1997 Aug 13
Fig.3 DC current gain; typical values.
3
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEOsust
collector-emitter sustaining voltage IC = 0.1 A; IB = 0; L = 25 mH;
see Figs 6 and 7
700
−
−
V
VCEsat
collector-emitter saturation voltage IC = 2 A; IB = 900 mA;
see Fig.8
−
−
1
V
VBEsat
base-emitter saturation voltage
IC = 2 A; IB = 900 mA;
see Fig.9
−
−
1.3
V
VF
diode forward voltage (BU505DF)
IF = 2 A
−
−
1.8
V
ICES
collector-emitter cut-off current
VCE = VCESmax; VBE = 0;
note 1
−
−
0.15
mA
VCE = VCESmax; VBE = 0;
Tj = 125 °C; note 1
−
−
1
mA
−
−
1
mA
VCE = 5 V; IC = 2 A
2.22
−
−
VCE = 5 V; IC = 100 mA
6
13
30
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
hFE
DC current gain
see Fig.3
fT
transition frequency
VCE = 5 V; IC = 100 mA;
f = 1 MHz
−
7
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0;
f = 1 MHz
−
65
−
pF
LB = 10 µH
−
6.5
−
µs
LB = 15 µH
−
7.5
−
µs
LB = 25 µH
−
9.5
−
µs
LB = 10 µH
−
0.9
−
µs
LB = 15 µH
−
0.9
−
µs
LB = 25 µH
−
0.85
−
µs
Switching times in horizontal deflection circuit (see Fig.4)
ts
tf
storage time
fall time
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, full pagewidth
BU505F; BU505DF
MGB931
102
IC
(A)
10
ICM max
IC max
II
1
10−1
I
10−2
10−3
10−4
1
10
102
Mounted without heatsink compound and 30 ±5 N force on centre of package.
Th = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.4 Forward bias SOAR.
1997 Aug 13
5
103
VCE (V)
104
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, full pagewidth
BU505F; BU505DF
MGB932
102
IC
(A)
10
ICM max
IC max
II
1
10−1
I
10−2
10−3
10−4
1
10
102
Mounted with heatsink compound and 30 ±5 N force on centre of package.
Th = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.5 Forward bias SOAR.
1997 Aug 13
6
103
VCE (V)
104
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, halfpage
BU505F; BU505DF
MGE239
handbook,IC
halfpage
+ 50 V
(mA)
100 to 200 Ω
250
L
200
horizontal
oscilloscope
100
vertical
6V
300 Ω
1Ω
30 to 60 Hz
Fig.6
0
VCE (V)
min
VCEOsust
MGE252
Test circuit for collector-emitter
sustaining voltage.
Fig.7
Oscilloscope display for collector-emitter
sustaining voltage.
MGB889
800
MGB882
1.5
handbook, halfpage
handbook, halfpage
VCEsat
(mV)
600
VBEsat
400
1
(V)
200
0
10−1
1
IC (A)
0.5
10−1
10
IC/IB = 2; Tj = 25 °C.
IC/IB = 2; Tj = 25 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
1997 Aug 13
7
1
IC (A)
10
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, halfpage
BU505F; BU505DF
MBH382
ICsat
iC
90%
10%
time
tf
ts
iB
IB (end)
time
Fig.10 Switching time waveforms.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
PACKAGE OUTLINE
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
SOT186
E
E1
A
P
A1
m
q
D1
D
L1
Q
b1
L
L2
1
2
3
b
c
w M
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
E1
e
e1
L
L1(1)
L2
m
P
Q
q
w
mm
4.4
4.0
2.9
2.5
0.9
0.7
1.5
1.3
0.55
0.38
17.0
16.4
7.9
7.5
10.2
9.6
5.7
5.3
2.54
5.08
14.3
13.5
4.8
4.0
10
0.9
0.5
3.2
3.0
1.4
1.2
4.4
4.0
0.4
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT186
1997 Aug 13
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
TO-220
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
NOTES
1997 Aug 13
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 13
Document order number:
9397 750 02709