PHILIPS LZ1418E100R

DISCRETE SEMICONDUCTORS
DATA SHEET
LZ1418E100R
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
FEATURES
PINNING - SOT443A
• Interdigitated structure provides high emitter efficiency
PIN
DESCRIPTION
• Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
1
collector
• Gold metallization realizes very stable characteristics
and excellent lifetime
2
base
3
emitter connected to flange
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Internal input and output prematching ensures good
stability and allows an easier design of wideband
circuits.
handbook, halfpage
1
c
APPLICATIONS
b
• Common emitter class A amplifiers in CW conditions for
military and professional applications between
1.4 to 1.8 GHz.
3
e
2
Top view
MAM314
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the emitter
connected to the flange.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class A wideband amplifier.
MODE OF OPERATION
Class-A (CW)
f
(GHz)
VCE
(V)
IC
(A)
PL1
(W)
Gpo
(dB)
Zi; ZL
(Ω)
1.4 to 1.8
16
2
≥9
≥10
see Fig 7
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
45
V
VCER
collector-emitter voltage
RBE = 220 Ω
−
30
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
4
A
Ptot
total power dissipation
−
45
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
Tmb ≥ 75 °C
at 0.2 mm from flange;
t ≤ 10 s
MGL003
10
MGD970
50
handbook, halfpage
handbook,
Ptot
(W)
IC
(A)
40
1
30
(1)
10−1
20
(2)
10
10−2
1
10
VCE (V)
0
102
0
50
100
150
200
Tmb (°C)
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 220 Ω.
Fig.2 DC SOAR.
1997 Feb 18
Fig.3
3
Power derating curve.
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
Tj = 75 °C
2.2
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
Tj = 75 °C; note 1
0.2
K/W
MAX.
UNIT
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
VCB = 20 V; IE = 0
−
2
mA
VCB = 40 V; IE = 0
−
20
mA
ICER
collector cut-off current
VCE = 30 V; RBE = 220 Ω
−
20
mA
ICEO
collector cut-off current
VCE = 20 V; IB = 0
−
20
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
−
200
µA
hFE
DC current gain
VCE = 3 V; IC = 2 A
15
−
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class-A wideband amplifier; note 1.
MODE OF OPERATION
Class-A (CW)
f
(GHz)
VCE
(V)
IC
(A)
PL1
(W)
Gpo
(dB)
Z i; Z L
(Ω)
1.4 to 1.8
16
2
≥9
typ. 10
≥10
typ. 11
see Fig 7
Note
1. Amplifier consists of test circuit board without any additional tuning.
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
VBB
handbook, full pagewidth
VCC
ferrite
bead
,,,,,,
,,,,,,
,,,,,,,,,,,,,
,,
,,,,,,,,,,,,
,,,,,,
16
5
6
4
0.65
input
50 Ω
0.65
3
output
50 Ω
10
100 pF
ATC
100 pF
ATC
3
3
6
5
2.5
6
2
6
1.5
MGK059
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.4 Wideband test circuit board for 1.4 to1.8 GHz, CW class A application.
MGL010
15
MGD982
15
handbook, halfpage
handbook, halfpage
PL1
(W)
Gpo
(dB)
10
10
5
1.3
1.6
f (GHz)
5
1.3
1.9
VCE = 16 V; IC = 2 A (regulated); Tmb = 25 °C.
Fig.5
1997 Feb 18
1.6
f (GHz)
VCE = 16 V; IC = 2 A (regulated); Tmb = 25 °C.
Load power as a function of frequency;
typical values.
Fig.6
5
Linear power gain as a function of
frequency; typical values.
1.9
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
1
handbook, full pagewidth
0.5
2
1.4
0.2
zi
0
0.2
0.5
1.7
−j
1.8 GHz
10
1.5
1.8 GHz
+j
5
1
2
5
∞
10
1.6
1.4
10
ZL
5
0.2
2
0.5
1
MGL063
Zo = 10 Ω; VCE = 16 V; IC = 2 A (regulated); Tmb = 25 °C.
Fig.7 Input and load impedances as functions of frequency; typical values.
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
PACKAGE OUTLINE
24 max
handbook, full pagewidth
0.5 Y
0.1
6.4
max
3.5
2.9
3
1.7 max
seating plane
Y
3.1
1
4 min
0.5 X
X
10.5
max
3.4
3.2
10.5
max
23
max
0.5 X
2
MBC663
16.5
0.5 Y
Dimensions in mm.
Torque on nut: Max. 0.5 Nm.
Recommended screw: M3.
Fig.8 SOT443A.
1997 Feb 18
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
8
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
NOTES
1997 Feb 18
9
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
NOTES
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LZ1418E100R
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01728