BUL3P5 MEDIUM VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR Features ■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED Applications ■ 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 2 3 TO-220 Description The BUL3P5 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. Internal Schematic Diagram It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, H.F. ballast voltage FED where it is coupled with the BUL3N7, its complementary NPN transistor. Order Codes Part Number Marking Package Packing BUL3P5 BUL3P5 TO-220 TUBE December 2005 rev.2 1/10 www.st.com 10 BUL3P5 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Rating Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) -500 V VCEO Collector-Emitter Voltage (IB = 0) -400 V VEBO Emitter-Base Voltage (IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150°C) V(BR)EBO V Collector Current -3 A Collector Peak Current (tP < 5ms) -6 A -1.5 A IC ICM IB Base Current IBM Base Peak Current (tP < 5ms) -3 A PTOT Total dissipation at Tc = 25°C 60 W Tstg Storage Temperature -65 to 150 °C 150 °C Value Unit 2.08 62.5 °C/W °C/W TJ Table 2. Symbol RthJ-case RthJ-amb 2/10 Max. Operating Junction Temperature Thermal Data Parameter Thermal Resistance Junction-Case_______________Max Thermal Resistance Junction-Ambient ______ ______Max BUL3P5 2 2 Electrical Characteristics Electrical Characteristics Table 3. Symbol ICES Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Collector Cut-off Current (V BE = 0) Test Conditions VCE(sat) Note: 1 VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Note: 1 VCE = -500 V__ __TC = 125°C -5 tr ts tf ts tf RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Unit -0.1 -0.5 mA mA -10 V V IC = -0.7 A __ _ IB = -0.1A IC = -1 A __ _ IB = -0.2 A -0.5 -0.5 V V IC = -0.5A ____ IB = -0.1 A -1.1 -1.2 -1.3 V V V IC = -1A _____ IB = -0.2 A IC = -2A _____ IB = -0.4 A DC Current Gain Max. -400 IC = 100 mA IC = -10 mA __ VCE = -5 V hFE Typ. VCE = -500 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 mA (IC = 0) VCEO(sus) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) Min. IC = -0.7A _ __ VCE = -5 V IC = -2A_ VCE = -5 V IC = -0.7 A ___ VCC = -250 V IB1 = -0.14 A __ IB2 = 0.14 A Tp = 30 µs IC = -1 A ____ IB1 = -0.2 A VBE(off) = 5 V Rbb = 0 Ω L = 1 mH Vclamp = 200 V 10 18 4 34 100 2.4 80 ns µs ns 450 70 ns ns Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. 3/10 BUL3P5 2 Electrical Characteristics 2.1 Typical Characteristics Figure 1. Safe Operating Area Figure 2. DC Current Gain Figure 3. DC Current Gain Figure 4. Collector Emitter Saturation Voltage Figure 5. Base Emitter Saturation Voltage Figure 6. Switching Times Resistive Load 4/10 BUL3P5 Figure 7. 2 Electrical Characteristics Switching Times Inductive Load Figure 8. Reverse Bised SOA 5/10 3 Test Circuits 3 Test Circuits Figure 9. Inductive Load Switching Test Circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast Recovery Rectifier Figure 10. Resistive Load Switching Test Circuits 1) Fast Electronic Switching 2) Non-inductive Resisitor 6/10 BUL3P5 BUL3P5 4 4 Package Mechanical Data Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 BUL3P5 4 Package Mechanical Data TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 8/10 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 BUL3P5 5 5 Revision History Revision History Date Revision 09-Dec-2005 2 Changes Inserted curves 9/10 BUL3P5 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10