isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL416 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switchmode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 6 A ICM Collector Current-peak tp<5ms 9 A IB Base Current-Continuous 5 A IBM Base Current-peak tp<5ms 8 A PC Collector Power Dissipation TC=25℃ 110 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.14 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL416 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.33A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 1.33A 1.5 V ICES Collector Cutoff Current VCE= 1600V; VBE= 0 VCE= 1600V; VBE= 0; TC= 125℃ 0.1 0.5 mA ICEO Collector Cutoff Current VCE= 800V; IB= 0 0.25 mA hFE-1 DC Current Gain IC= 10mA; VCE= 5V 10 hFE-2 DC Current Gain IC= 0.7A; VCE= 5V 12 800 V 9 V B B B B 40 Switching Times, Inductive Load ts Storage Time tf Fall Time hFE-2 Classifications A B 12-27 25-40 isc Website：www.iscsemi.cn IC= 3A; VCL= 200V; L= 200μH; IB1= 1A; VBE(off)= -5V; RBB= 0Ω 2.3 μs 0.65 μs