Philips Semiconductors Objective specification Rectifier diode fast, high-voltage FEATURES BY559-1500 SYMBOL • Low forward volt drop • Low forward recovery voltage • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 1500 V k 1 VF ≤ 1.2 V a 2 Vfr ≤ 14 V tfr ≤ 250 ns IF(AV) = 10 A IFSM ≤ 100 A GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring fast forward recovery and low forward recovery voltage. The device is intended for use in multi-sync monitor horizontal deflection circuits with maximum scan rates from 82 kHz to 120 kHz. PINNING PIN SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode The BY559 series is supplied in the conventional leaded SOD59 (TO220AC) package. 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM IFWM IFRM IFSM Peak repetitive reverse voltage Crest working reverse voltage Peak working forward current Peak repetitive forward current Peak non-repetitive forward current Tstg Tj Storage temperature Operating junction temperature CONDITIONS f = 120 kHz; t = 100 µs t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) MIN. MAX. UNIT - 1500 1300 10 150 180 200 V V A A A A -40 - 150 150 ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a September 1998 CONDITIONS in free air 1 MIN. TYP. MAX. UNIT - - 1.0 K/W - 60 - K/W Rev 1.100 Philips Semiconductors Objective specification Rectifier diode fast, high-voltage BY559-1500 STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current IF = 10 A IF = 10 A; Tj = 125 ˚C VR = VRWMmax VR = VRWMmax; Tj = 125 ˚C MIN. TYP. MAX. UNIT - 1.0 0.79 - 1.25 0.9 0.5 2.0 V V mA mA MIN. TYP. MAX. UNIT - 7 250 450 0.75 4.0 11 350 600 1.0 5.0 V ns ns µs µC DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS Vfr tfr Forward recovery voltage Forward recovery time trr Qs Reverse recovery time Reverse recovery charge IF = 10 A; dIF/dt = 50 A/µs IF = 10 A; dIF/dt = 50 A/µs; VF = 5 V IF = 10 A; dIF/dt = 50 A/µs; VF = 2 V IF = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V IF = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V September 1998 2 Rev 1.100 Philips Semiconductors Objective specification Rectifier diode fast, high-voltage I BY559-1500 BY559-1500 IF / A 20 F Tj = 25 C Tj = 125 C 15 max 10% typ time tfr 10 VF 5 V 5V / 2V VF fr 0 0 0.2 0.4 time Fig.1. Definition of Vfr and tfr I dI F 0.6 0.8 VF / V 1 1.2 1.4 Fig.4. Typical and maximum forward characteristic IF = f(VF); parameter Tj 25 F BY559-1500 Vfr / V dt max 20 trr typ 15 time 10 Qs I 25% 100% 5 R 0 Fig.2. Definition of trr and Qs 0 50 100 150 dIF/dt (A/us) 200 250 Fig.5. Typical and maximum Vfr = f(dIF/dt); IF = 10 A; Tj = 25˚C VCC 10 Transient thermal impedance, Zth j-mb (K/W) 1 Line output transformer LY 0.1 PD 0.01 Cf deflection transistor D= tp T Cs D1 0.001 1us T 10us t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY559 10s Fig.6. Transient thermal impedance Zth = f(tp) Fig.3. Basic horizontal deflection circuit. September 1998 tp 3 Rev 1.100 Philips Semiconductors Objective specification Rectifier diode fast, high-voltage BY559-1500 MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.100