CHENMKO CH3904WPT

CHENMKO ENTERPRISE CO.,LTD
CH3904WPT
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts
CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SC-70/SOT-323
* Small surface mounting type. (SC-70/SOT-323)
* Low current (Max.=200mA).
* Suitable for high packing density.
(2)
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
(3)
(1)
1.3±0.1
0.65
2.0±0.2
0.65
0.3±0.1
CONSTRUCTION
1.25±0.1
* NPN Switching Transistor
MARKING
* NG
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
3
CIRCUIT
2.0~2.45
1
2
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current DC
−
200
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
V
Note
1. Transistor mounted on an FR4 printed-circuit board.
2002-5
RATING CHARACTERISTIC CURVES ( CH3904WPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6 V
−
50
nA
hFE
DC current gain
VCE = 1 V; note 1
VCEsat
VBEsat
IC = 0.1 mA
60
−
IC = 1 mA
80
−
IC = 10 mA
100
300
IC = 50 mA
60
−
IC = 100 mA
30
−
collector-emitter saturation
voltage
IC = 10 mA; IB = 1 mA
−
200
mV
IC = 50 mA; IB = 5 mA
−
300
mV
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
650
850
mV
IC = 50 mA; IB = 5 mA
−
950
mV
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
4
pF
Ce
emitter capacitance
IC = ic = 0; VBE = 500 mV;
f = 1 MHz
−
8
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
300
−
MHz
F
noise Þgure
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
−
5
dB
Switching times (between 10% and 90% levels);
−
65
ns
−
35
ns
rise time
−
35
ns
toff
turn-off time
−
240
ns
ts
storage time
−
200
ns
tf
fall time
−
50
ns
ton
turn-on time
td
delay time
tr
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
ICon = 10 mA; IBon = 1 mA;
IBoff = −1 mA
RATING CHARACTERISTIC CURVES ( CH3904WPT)
Total power dissipation Ptot = f (TS)
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
360
2
mW
mA
C
300
10 2
P tot
270
5
240
V BE
V CE
210
180
10 1
150
120
5
90
60
30
0
0
15
30
45
60
75
90 105 120
°C 150
TS
10 0
0
0.2
0.4
0.6
Permissible pulse load
DC current gain hFE = f (I C)
Ptotmax / PtotDC = f (tp )
VCE = 10V, normalized
10 3
0.8
1.0 V 1.2
V BE sat , V CE sat
10 1
Ptot max
Ptot DC
D=
tp
T
tp
h FE
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
5
125 C
25 C
10 0
-55 C
5
5
10 0 -6
10
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
10 -1
10
-1
5 10 0
5 10 1
mA 10 2 2
ΙC
RATING CHARACTERISTIC CURVES ( CH3904WPT )
Short-circuit forward current
Open-circuit output admittance
transfer ratio h21e = f (IC)
h22e = f (IC)
VCE = 10V, f = 1MHz
VCE = 10V, f = 1MHz
10 3
10 2
s
h 21e
h 22e
5
5
10 2
10 1
5
5
10 1
-1
10
5
10
0
mA
10
10 0
-1
10
1
5
10
0
mA
ΙC
ΙC
Delay time td = f (IC )
10
1
Storage time t stg = f (IC)
Rise time tr = f (IC)
10 3
10 3
ns
ns
t r ,t d
tr
td
ts
25 C
125 C
h FE = 10
10 2
VCC = 3 V
h FE = 20
10
10 2
h FE = 20
10
40 V
15 V
10 1
V BE = 2 V
10 1
0V
10 0
0
10
5 10 1
5 10 2
mA 10 3
ΙC
10 0
0
10
5 10 1
5 10 2
mA 10 3
ΙC
RATING CHARACTERISTIC CURVES ( CH3904WPT )
Fall time tf = f (IC)
Rise time tr = f (IC)
10 3
10 3
ns
ns
tr
tf
25 C
125 C
25 C
VCC = 40 V
10
10 2
2
VCC = 40 V
h FE = 10
125 C
h FE = 20
h FE = 10
10 1
10 0
0
10
5 10 1
10 1
5 10 2
10 0
0
10
mA 10 3
5 10 1
5 10 2
ΙC
Input impedance
Open-circuit reverse voltage
h11e = f (IC)
transfer ratio h12e = f (I C)
VCE = 10V, f = 1kHz
VCE = 10V, f = 1kHz
10 -3
10 2
h 11e
mA 10 3
ΙC
k
h 12e
10 1
5
10 -4
5
10 0
5
10 -1
10 -1
5
10 0
mA
ΙC
10 1
10 -5
10
-1
5
10
0
mA
ΙC
10
1
RATING CHARACTERISTIC CURVES ( CH3904WPT )
Test circuits
Delay and rise time
+3.0 V
300 ns
275
D = 2%
+10.9 V
10 k
0
C
-0.5 V
<4.0 pF
<1.0 ns
Storage and fall time
+3.0 V
t1
10 < t 1 < 500 s
D = 2%
275
+10.9 V
10 k
0
-9.1 V
C
1N916
<1.0 ns
<4.0 pF