CHENMKO ENTERPRISE CO.,LTD CHTA29XPT SURFACE MOUNT NPN Darlington Transistor VOLTAGE 40 Volts CURRENT 0.5 Ampere APPLICATION * Preamplifier input applications. SC-62/SOT-89 FEATURE * High current , Ic=500mA * High DC current gain , hFE>20000 1.6MAX. 4.6MAX. 0.4+0.05 * T29 0.8MIN. MARKING +0.08 0.45-0.05 +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 1 1 Base CIRCUIT 4.6MAX. 2.5+0.1 1.7MAX. 2 3 2 Collector ( Heat Sink ) C (2) 3 Emitter (1) B E (3) SC-62/SOT-89 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 10 V IC collector current (DC) − 500 mA ICM peak collector current − 1000 mA IBM Ptot peak base current total power dissipation − 200 mA − 1300 Tstg storage temperature junction temperature −65 − +150 Tj mW °C °C Tamb operating ambient temperature Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 −65 150 +150 V °C 2007-06 RATING CHARACTERISTIC CURVES ( CHTA29XPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 104 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current VCB = 30 V − 100 nA IEBO emitter cut-off current VEB = 10 V − 100 nA hFE DC current gain IC = 1 mA; VCE = 5V IC = 10 mA; VCE =5V IC = 100 mA; VCE = 5V IC = 500 mA; VCE = 5V VCE(sat) collector-emitter saturation voltage IC = 100 mA; IB = 0.1 m A − 1.0 V VBE(sat) base-emitter saturation voltage IC = 100 mA; IB = 0.1 m A − 1.5 V VBE(ON) base-emitter saturation voltage IC = 10 mA; VCE =5V − 1.4 V fT transition frequency IC = 30 mA; VCE = 5 V; f = 100MHz − MHz 4000 10000 20000 4000 220(typ) − − −