CHENMKO ENTERPRISE CO.,LTD CHTA42ZPT SURFACE MOUNT NPN SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 1.65+0.15 6.50+0.20 0.90+0.05 3.00+0.10 2.0+0.3 0.70+0.10 MARKING 0.70+0.10 2.30+0.1 ZHN 0.9+0.2 2.0+0.3 3.5+0.2 *NPN SILICON Transistor 7.0+0.3 CONSTRUCTION 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base CIRCUIT 3 2 2 Emitter C (3) 3 Collector ( Heat Sink ) (1) B E(2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 300 VCEO collector-emitter voltage open base − 300 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 500 mA Ptot total power dissipation − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHTA42ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 104 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. − MAX. UNIT ICBO collector cut-off current VCB = 200 V IEBO emitter cut-off current VEB = 6 . 0 V hFE DC current gain IC = 1 mA; VCE = 10V IC = 10 mA; VCE =10V IC = 30 mA; VCE =10V VCE(sat) collector-emitter saturation voltage IC=20mA, IB=2.0mA − 0.5 V VBE(sat) base-emitter saturation voltage IC=20mA, IB=2.0mA − 0.9 V fT transition frequency IC = 10 mA; VCE=20V ; f = 100MHz 50 − Cob collector capacitance VCB=20V, IE=0, f=1.0MHZ − 3.0 − 25 40 40 100 nA 100 nA − − pF