CHENMKO CHTA27ZPT

CHENMKO ENTERPRISE CO.,LTD
CHTA27ZPT
SURFACE MOUNT
NPN SILICON Transistor
VOLTAGE 60 Volts
CURRENT 0.5 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small flat package. ( SC-73/SOT-223 )
* Suitable for high packing density.
1.65+0.15
6.50+0.20
0.90+0.05
3.00+0.10
2.0+0.3
MARKING
0.70+0.10
* ZKN
0.70+0.10
2.30+0.1
0.9+0.2
2.0+0.3
3.5+0.2
*NPN SILICON Transistor
7.0+0.3
CONSTRUCTION
0.27+0.05
0.01~0.10
0.70+0.10
4.60+0.1
1
1 Base
CIRCUIT
3
2
2 Emitter
C (3)
3 Collector ( Heat Sink )
(1) B
E(2)
SC-73/SOT-223
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
VCEO
collector-emitter voltage
open base
−
60
V
VEBO
emitter-base voltage
open collector
−
10
V
IC
collector current (DC)
−
500
mA
Ptot
total power dissipation
−
2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
V
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHTA27ZPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
104
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 50 V
−
100
nA
IEBO
emitter cut-off current
VEB = 1 0 V
−
100
nA
hFE
DC current gain
IC = 10 mA; VCE = 5V
IC = 100 mA; VCE =5V
VCE(sat)
collector-emitter saturation
voltage
IC = 100 mA; IB = 0.1 m A
−
1.5
V
VBE(ON)
base-emitter saturation voltage
I C = 100 mA; VCE=5V
−
2
V
fT
transition frequency
IC = 10 mA; VCE = 5 V;
f = 100MHz
125
10000
10000
−
−
−
MHz