UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. FEATURES * RDS(ON) = 1.0Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N70L-TA3-T 12N70G-TA3-T 12N70L-TF1-T 12N70G-TF1-T 12N70L-TF3-T 12N70G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 7 QW-R502-220.D 12N70 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) RATINGS UNIT 700 V ±30 V 12 A 12 A Continuous Drain Current Pulsed (Note 2) 48 A 790 mJ Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) 24 mJ Peak Diode Recovery dv/dt (Note 4) 4.5 V/ns TO-220 225 °C/W Power Dissipation PD TO-220F/TO-220F1 51 °C/W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATING 62.5 0.56 2.43 UNIT °C/W °C/W °C/W 2 of 6 QW-R502-220.D 12N70 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA Drain-Source Leakage Current IDSS VDS = 700 V, VGS = 0 V Gate-Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID = 12A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 480V,ID= 12A, Gate-Source Charge QGS VGS= 10 V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 12A, dI Reverse Recovery Charge QRR F/dt = 100 A/μs (Note 1) Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 V 10 μA ±100 nA 0.7 V/°C 2.0 0.7 4.0 1.0 V Ω 1480 1900 pF 200 270 pF 25 35 pF 30 70 115 240 95 200 85 180 42 54 8.6 21 380 3.5 ns ns ns ns nC nC nC 1.4 V 12 A 48 A ns μC 3 of 6 QW-R502-220.D 12N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-220.D 12N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤1μs Duty Factor≤0.1% Switching Test Circuit 12V tF Switching Waveforms Same Type as D.U.T. 50kΩ 0.2μF tD(OFF) tR QG 10V 0.3μF QGS VDS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-220.D 12N70 Drain Current, ID (µA) TYPICAL CHARACTERISTICS Drain Current, ID (µA) Power MOSFET Drain-Source On-State Resistance Characteristics 6 14 12 Drain Current, ID (A) 5 Drain Current, ID (A) Drain Current vs. Source to Drain Voltage 4 3 2 1 10 8 6 4 2 0 0 0 1 2 3 4 5 6 Drain to Source Voltage, VDS (V) 0 0.4 0.6 0.8 1.0 1.2 0.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-220.D