CMLM0585 Multi Discrete Module ™ SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a Low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODE: 85C SOT-563 CASE APPLICATIONS: • • • • DC - DC Converters Boost Converters Motor Drive Controls Battery Powered Portable Equipment FEATURES: • High Current MOSFET (ID=650mA) • ESD protection up to 2kV • Low rDS(on) MOSFET (0.5Ω MAX @ VGS=2.5V) • Low VF Schottky Diode (0.47V MAX @ 0.5A) MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance SYMBOL PD PD PD TJ, Tstg ΘJA 350 300 150 -65 to +150 357 UNITS mW mW mW °C °C/W MAXIMUM RATINGS - Q1: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current SYMBOL VDS VGS ID 20 8.0 650 UNITS V V mA MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp≤1.0ms Peak Forward Surge Current, tp = 8.0ms SYMBOL VRRM IF IFRM IFSM 40 500 3.5 10 UNITS V mA A A ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=4.5V, VDS=0 IDSS VDS=16V, VGS=0 BVDSS VGS=0, ID=250μA 20 VGS(th) VDS=VGS, ID=250μA 0.5 VSD VGS=0, IS=250mA VGS=4.5V, ID=350mA 0.25 rDS(ON) rDS(ON) VGS=2.5V, ID=300mA 0.37 rDS(ON) VGS=1.8V, ID=150mA Notes: MAX 10 100 1.0 1.1 0.36 0.5 0.8 UNITS μA nA V V V Ω Ω Ω (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R2 (27-September 2011) CMLM0585 Multi Discrete Module ™ SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX Qg(tot) VDS=10V, VGS=4.5V, ID=200mA 1.2 Qgs VDS=10V, VGS=4.5V, ID=200mA 0.24 Qgd VDS=10V, VGS=4.5V, ID=200mA 0.36 gFS VDS=10V, ID=200mA 200 Crss VDS=16V, VGS=0, f=1.0MHz 25 Ciss VDS=16V, VGS=0, f=1.0MHz 100 Coss VDS=16V, VGS=0, f=1.0MHz 21 ton VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω 38 toff VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω 48 UNITS nC nC nC mS pF pF pF ns ns ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) SYMBOL TEST CONDITIONS IR VR=10V IR VR=30V BVR IR=500μA VF IF=100μA VF IF=1.0mA VF IF=10mA VF IF=100mA VF IF=500mA CT VR=1.0V, f=1.0MHz UNITS μA μA V V V V V V pF MIN TYP MAX 20 100 40 0.13 0.21 0.27 0.35 0.47 50 SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODE: 85C R2 (27-September 2011) w w w. c e n t r a l s e m i . c o m