CMLT8099M SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE(ON) characteristics. This PICOmini™ device is manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. MARKING CODE: 8CM SOT-563 CASE • Device is Halogen Free by design APPLICATIONS: • Small signal general purpose amplifiers MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Transistor pair matched for VBE(ON) SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: SYMBOL TEST CONDITIONS ICBO VCB=80V IEBO VBE=6.0V BVCBO IC=100µA BVCEO IC=10mA BVEBO IE=10µA VCE(SAT) IC=100mA, IB=5.0mA VCE(SAT) IC=100mA, IB=10mA VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=1.0mA hFE VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=100mA fT VCE=5.0V, IC=10mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS |VBE1-VBE2| VCE=5.0V, IC=1.0µA |VBE1-VBE2| VCE=5.0V, IC=5.0µA |VBE1-VBE2| VCE=5.0V, IC=10µA |VBE1-VBE2| VCE=5.0V, IC=100µA UNITS V V V mA mW °C °C/W 80 80 6.0 500 350 -65 to +150 357 (TA=25°C unless otherwise noted) MIN MAX 0.1 0.1 80 80 6.0 0.4 0.3 0.6 0.8 100 300 100 75 150 6.0 25 MIN MAX 10 10 10 10 UNITS µA µA V V V V V V MHz pF pF UNITS mV mV mV mV R1 (20-January 2010) CMLT8099M SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: 8CM R1 (20-January 2010) w w w. c e n t r a l s e m i . c o m