CPH5901 Ordering number : EN8278B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package Common drain and emitter • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage VDSX VGDS Gate-to-Drain Voltage Gate Current Drain Current IG ID Allowable Power Dissipation PD 15 Mounted on a ceramic board (600mm2×0.8mm) V --15 V 10 mA 50 mA 350 mW [TR] Collector-to-Base Voltage VCBO VCEO VEBO Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) V 150 IB PC Collector Dissipation V V 6 IC ICP Base Current 55 50 mA 300 mA 30 mA Mounted on a ceramic board (600mm2×0.8mm) 350 mW Mounted on a ceramic board (600mm2×0.8mm) 500 mW [TR] Total Power Dissipation Junction Temperature PT Tj Storage Temperature Tstg 150 °C --55 to +150 °C Product & Package Information unit : mm (typ) 7017A-007 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 CPH5901F-TL-E CPH5901G-TL-E 0.15 2.9 3 Packing Type : TL Marking LOT No. 1A RANK 0.05 1.6 2.8 0.2 0.6 Package Dimensions 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base Electrical Connection 5 4 3 SANYO : CPH5 1 2 http://semicon.sanyo.com/en/network 60612 TKIM/62005AC MSIM TB-00001557/32505AC TSIM TA-3705 No.8278-1/8 CPH5901 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS VGS(off) Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Noise Figure IG=--10μA, VGS=0V VGS=--10V, VDS=0V --15 VDS=5V, ID=100μA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz --0.2 V --1.0 --0.6 6.0* 25 nA --1.4 V 20.0* mA 50 mS 10 pF Crss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1kHzz 3.0 pF NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB ICBO IEBO VCB=35V, IE=0A 0.1 μA VEB=4V, IC=0A 0.1 μA VCE=6V, IC=1mA Gain-Bandwidth Product hFE fT VCE=6V, IC=10mA 200 Output Capacitance Cob 1.7 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=6V, f=1MHz IC=50mA, IB=5mA [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 135 IC=50mA, IB=5mA 400 MHz pF 0.08 0.4 mV 0.8 1.0 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 55 V IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=10μA, IC=0A 6 tstg tf See specified Test Circuit. V 0.15 ns 0.75 ns 0.20 ns * : The CPH5901 is classified by IDSS as follows : (unit : mA) Rank IDSS F 6.0 to 12.0 G 10.0 to 20.0 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 OUTPUT INPUT VR 50Ω RB + 220μF RL + 470μF VBE= --5V VCC=20V 10IB1= --10IB2= IC=10mA Ordering Information Package Shipping CPH5901F-TL-E Device CPH5 3,000pcs./reel CPH5901G-TL-E CPH5 3,000pcs./reel memo Pb Free No.8278-2/8 CPH5901 ID -- VDS 16 ID -- VDS [FET] 20 [FET] VGS=0V 16 Drain Current, ID -- mA 12 10 --0.1V 8 --0.2V 6 4 --0.3V --0.6V 0.4 0.8 1.2 1.6 Drain-to-Source Voltage, VDS -- V [FET] A 0m =2 S mA I DS 15 A m 10 A 6m 0 --0.2 Gate-to-Source Voltage, VGS -- V 10 20m 1 mA =6 SS 3 ID 2 10 7 5 3 1.0 [FET] 7 5 3 2 5 7 2 10 3 | yfs | -- IDSS 100 5 ITR10332 [FET] VDS=5V VGS=0V f=1kHz 7 5 3 2 10 2 3 5 7 2 10 Drain Current, ID -- mA Ciss -- VDS 3 3 3 5 5 7 VGS=0V f=1MHz 10 7 5 3 2 1.0 2 10 3 Drain Current, IDSS -- mA ITR10333 Crss -- VDS [FET] 2 Input Capacitance, Ciss -- pF 10 ITR10330 Drain Current, IDSS -- mA Forward Transfer Admittance, | yfs | -- mS 0mA 8 VDS=5V ID=100μA 3 10 Reverse Transfer Capacitance, Crss -- pF Forward Transfer Admittance, | yfs | -- mS A 5 6 --0.1 [FET] 7 4 --1.0 0 VDS=5V f=1kHz --0.4V --0.5V VGS(off) -- IDSS ITR10331 | yfs | -- ID 100 2 2 40 0 --0.4 --0.3V Drain-to-Source Voltage, VDS -- V 20 --0.6 --0.2V 0 30 --0.8 8 ITR10329 VDS=5V --1.0 --0.1V 2.0 ID -- VGS --1.2 12 --0.6V Cutoff Voltage, VGS(off) -- V 0 0 VGS=0V 4 --0.4V --0.5V 2 Drain Current, ID -- mA Drain Current, ID -- mA 14 5 ITR10334 [FET] VGS=0V f=1MHz 7 5 3 2 1.0 7 5 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 ITR10335 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 ITR10336 No.8278-3/8 CPH5901 NF -- f 14 12 3m A 0 10 2 6 4 mA kΩ 8 10 10 10 A 1m Ω 1k 4 2 5 100 2 5 2 1k 5 10k 2 PD -- Ta 400 0 10 5 100k 2 5 1M ITR10337 Frequency, f -- Hz [FET] VDS=5V Rg=1kΩ I D= 8 2 Allowable Power Dissipation, PD -- mW 14 Noise Figure, NF -- dB 10 Ω 00 =5 Rg Noise Figure, NF -- dB 12 6 NF -- f [FET] VDS=5V ID=10mA 2 5 100 2 5 1k 2 5 10k 2 5 100k 2 5 1M ITR10338 Frequency, f -- Hz [FET] 350 M ou 300 nt ed 250 on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 ✕ 0. 8m m ) 50 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IC -- VCE 50 0μA Collector Current, IC -- mA IC -- VCE [TR] 12 A 400μ 350μA 300μA 250μA 50 0μ A 45 160 IT09862 40 200μA 30 150μA 20 100μA 50μA 10 [TR] 50μA 45μA 10 Collector Current, IC -- mA 0 8 40μA 35μA 30μA 6 25μA 20μA 4 15μA 10μA 5μA 2 IB=0μA 0 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR10340 IC -- VBE 160 IB=0μA 0 1.0 [TR] hFE -- IC 2 ITR10341 [TR] VCE=6V VCE=6V 140 DC Current Gain, hFE 100 Ta=75°C 25°C --25°C Collector Current, IC -- mA 1000 120 80 60 40 7 5 3 Ta=75°C 2 25°C --25°C 100 7 20 5 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR10342 3 0.1 2 3 5 1.0 2 3 5 10 2 3 Collector Current, IC -- mA 5 100 2 3 ITR10343 No.8278-4/8 CPH5901 f T -- IC [TR] VCE=6V [TR] f=1MHz 5 3 3 2 100 7 5 2 10 7 5 3 2 3 1.0 2 1.0 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA 2 100 ITR10344 Cob -- VCB 3 5 [TR] 5 3 2 1.0 3 5 7 10 ITR10345 VCE(sat) -- IC [TR] IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 2 1.0 3 2 10 7 Emitter-to-Base Voltage, VEB -- V f=1MHz Output Capacitance, Cob -- pF Cib -- VEB 5 Input Capacitance, Cib -- pF Gain-Bandwidth Product, f T -- MHz 7 1.0 7 5 3 2 0.1 75°C Ta= °C --25 7 5 °C 25 3 7 2 1.0 5 5 7 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC 10 7 100 ITR10346 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA [TR] 2 100 ITR10347 PC -- Ta 400 [TR] IC / IB=10 350 Collector Dissipation, PC -- mW Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 2 1.0 Ta= --25°C 7 3 1.0 25°C 75°C 5 M ou 300 nt 250 ed on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 ✕ 0. 8m m ) 50 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR10348 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09863 No.8278-5/8 CPH5901 Embossed Taping Specification CPH5901F-TL-E, CPH5901G-TL-E No.8278-6/8 CPH5901 Outline Drawing CPH5901F-TL-E, CPH5901G-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.8278-7/8 CPH5901 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.8278-8/8