COMCHIP SMD Ultra Fast Reco ver y Rect ifier s SMD Diodes Specialist CURA101-G Thru. CURA107-G Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Features DO-214AC (SMA) -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.110(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) -Ultra fast recovery time: 50~75nS. -Low leakage current. Mechanical data 0.209(5.31) 0.185(4.70) -Case: JEDEC DO-214AC, molded plastic. 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) -Terminals: solderable per MIL-STD-750, method 2026. 0.008(0.20) 0.004(0.10) 0.059(1.50) 0.035(0.89) -Polarity: Color band denotes cathode end. -Approx. weight: 0.063 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Symbol CURA 101-G CURA 102-G CURA 103-G CURA 104-G CURA 105-G CURA 106-G CURA 107-G Units Max. repetitive peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Max. DC blocking voltage V DC 50 100 200 400 600 800 1000 V Max. RMS voltage V RMS 35 70 140 280 420 560 700 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 30 A Max. average forward current IO 1.0 A Max. instantaneous forward voltage at 1.0A VF Reverse recovery time T rr Max. DC reverse current at T A =25 OC rated DC blocking voltage T A =100 OC IR 5.0 100 RθJL 42 TJ 150 O C T STG -55 to +150 O C Parameter Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature 1.3 1.0 50 1.7 V 75 nS μA O C/W Notes: 1. Thermal resistance from junction to lead. REV:A Page 1 QW-BU001 Comchip Technology CO., LTD. COMCHIP SMD Ultra Fast Reco ver y Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CURA101-G thru CURA107-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 1000 1 40 60 ~1 5- G~ 10 CU 7- RA G 10 4-G 1-G 10 10 RA T J =25 OC Pulse width 300μS 4% duty cycle 0.1 20 RA 0.1 T J =25 OC 0 1 CU 10 10 CU O T J =125 C 100 F o r w a rd C u rren t (A) Rever s e C urr e n t (μA ) 03 -G 100 80 100 120 0.01 0.4 140 0.8 1.2 2.0 1.6 2.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.3 Junction Capacitance Fig.4 Non-repetitive Forward Surge Current 140 30 O J u n c ti o n C apaci t ance (p F ) 120 Peak Forward Surge Current ( A) T J =25 OC f=1MHz and applied 4VDC reverse voltage 100 80 60 40 20 T J =25 C 8.3ms single half sine wave, JEDEC method 24 18 12 6 0 0 0.01 0.1 1 10 100 1 10 100 Number of Cycles at 60Hz Reverse Voltage (V) Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 1.4 trr 10Ω NONINDUCTIVE Average Forward Current (A) 50Ω NONINDUCTIVE +0.5A (+) 25Vdc (approx.) (-) (-) D.U.T. 1Ω NONINDUCTIVE PULSE GENERATOR (NOTE 2) 0 -0.25A (+) OSCILLLISCOPE (NOTE 1) NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF. 2. Rise time=10ns max., input impedance=50Ω. -1.0A 1.2 1.0 0.8 0.6 Single phase Half wave 60Hz 0.4 0.2 0 0 1cm Set time base for 50 / 10nS / cm 25 50 75 100 125 150 175 Ambient Temperature ( OC) REV:A Page 2 QW-BU001 Comchip Technology CO., LTD.