CY7C1011CV33 2-Mbit (128K x 16) Static RAM Features Functional Description ■ Temperature ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C The CY7C1011CV33 is a high performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected. ■ Pin and function compatible with CY7C1011BV33 ■ High speed ❐ tAA = 10 ns (Industrial and Automotive-A) ❐ tAA = 12 ns (Automotive-E) ■ Low active power ❐ 360 mW (max) (Industrial and Automotive-A) ■ Data Retention at 2.0 ■ Automatic power down when deselected ■ Independent control of upper and lower bits ■ Easy memory expansion with CE and OE features ■ Available in Pb-free 44-pin TSOP II, 44-pin TQFP and non Pb-free 48-Ball VFBGA packages To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16). To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory appears on I/O8 to I/O15. For more information, see the “Truth Table” on page 9 for a complete description of Read and Write modes. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines. Logic Block Diagram SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 ROW DECODER INPUT BUFFER 128K x 16 RAM Array I/O0–I/O7 I/O8–I/O15 • BHE WE CE OE BLE A16 A15 A14 A12 A13 A9 Cypress Semiconductor Corporation Document Number: 38-05232 Rev. *H A10 A11 COLUMN DECODER 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised February 23, 2009 [+] Feedback CY7C1011CV33 Pin Configuration Figure 1. 44-Pin TSOP II [1] A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 Figure 2. 48-Ball VFBGA Pinout [1] A5 A6 A7 OE BHE BLE I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC 1 2 3 4 5 6 BLE OE A0 A1 A2 NC A I/O8 BHE A3 A4 CE I/O0 B I/O9 I/O10 A5 A6 I/O1 I/O2 C VSS I/O11 NC A7 VCC D VCC NC A16 I/O4 VSS E I/O14 I/O13 A14 A15 I/O5 I/O6 F I/O12 I/O3 I/O15 NC A12 A13 WE I/O7 G NC A8 A9 A10 A11 NC H A12 A11 A10 A9 OE BHE BLE 40 39 38 37 36 35 34 A13 A14 A15 A16 Figure 3. 44-Pin TQFP 42 41 43 44 1 I/O10 I/O5 9 I/O9 I/O6 10 24 I/O8 I/O7 11 23 NC 21 26 25 22 8 A8 7 I/O4 A7 VSS I/O11 20 VCC 27 A5 6 A6 VCC 18 VSS 28 19 29 NC 5 17 4 I/O3 16 I/O2 A4 I/O13 I/O12 A3 31 30 14 3 15 I/O1 A1 2 A2 I/O0 I/O14 13 I/O15 32 12 33 WE A0 1 CE Note 1. NC pins are not connected on the die. Document Number: 38-05232 Rev. *H Page 2 of 13 [+] Feedback CY7C1011CV33 Selection Guide Description Maximum Access Time Maximum Operating Current -10 -12 10 12 ns Industrial 100 95 mA Automotive-A 100 Automotive-E Maximum CMOS Standby Current Industrial 10 Automotive-A 10 Automotive-E Document Number: 38-05232 Rev. *H Unit mA 120 mA 10 mA mA 15 mA Page 3 of 13 [+] Feedback CY7C1011CV33 Maximum Ratings Current into Outputs (LOW) ........................................ 20 mA Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied ............................................ –55°C to +125°C Static Discharge Voltage............................................ >2001V (MIL-STD-883, Method 3015) Latch Up Current ..................................................... >200 mA Operating Range Range Supply Voltage on VCC Relative to GND[2] .....–0.5V to +4.6V Ambient Temperature (TA) VCC –40°C to +85°C 3.3V ± 10% DC Voltage Applied to Outputs in High Z State[2] ...................................... –0.5V to VCC+0.5V Industrial DC Input Voltage[2] .................................. –0.5V to VCC+0.5V Automotive-A –40°C to +85°C Automotive -E –40°C to +125°C Electrical Characteristics Over the Operating Range Parameter Description -10 Test Conditions Min -12 Max VOH Output HIGH Voltage VCC = Min, IOH = –4.0 mA VOL Output LOW Voltage VCC = Min, IOL = 8.0 mA VIH Input HIGH Voltage 2.0 VCC + 0.3 VIL Input LOW Voltage[2] –0.3 IIX Input Leakage Current Industrial Automotive-A GND < VI < VCC 2.4 Output Leakage Current GND < VI < VCC, Output disabled VCC Operating Supply Current VCC = Max, IOUT = 0 mA, f = fMAX = 1/tRC Automatic CE Power Down Current —TTL Inputs Max VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX V VCC + 0.3 V 0.8 –0.3 0.8 V –1 +1 –1 +1 μA –1 +1 –20 +20 –1 +1 –20 +20 Industrial –1 +1 Automotive-A –1 +1 Industrial 100 Automotive-A 100 Automatic CE Power Down Current — CMOS Inputs Max VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f = 0 Industrial 40 Automotive-A 40 mA 40 mA 45 Industrial 10 Automotive-A 10 Automotive -E 95 μA 120 Automotive -E ISB2 V 2.0 Automotive -E ISB1 Unit 0.4 Automotive -E ICC Max 2.4 0.4 Automotive -E IOZ Min 10 mA 15 Note 2. VIL (min) = –2.0V for pulse durations of less than 20 ns. Document Number: 38-05232 Rev. *H Page 4 of 13 [+] Feedback CY7C1011CV33 Capacitance Tested initially and after any design or process changes that may affect these parameters. Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 3.3V Max Unit 8 pF 8 pF Thermal Resistance Tested initially and after any design or process changes that may affect these parameters. Parameter Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) Test Conditions Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit board TSOP II TQFP VFBGA Unit 44.56 42.66 46.98 °C/W 10.75 14.64 9.63 °C/W Figure 4. AC Test Loads and Waveforms [3] 10-ns devices: 12-ns devices: Z = 50Ω 50 Ω * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT R 317Ω 3.3V OUTPUT 30 pF* OUTPUT R2 351Ω 30 pF* 1.5V (b) (a) High-Z characteristics: 3.0V GND ALL INPUT PULSES 90% 90% 10% 10% Rise Time: 1 V/ns (c) R 317Ω 3.3V Fall Time: 1 V/ns OUTPUT R2 351Ω 5 pF (d) Note 3. AC characteristics (except High-Z) for 10-ns parts are tested using the load conditions shown in Figure 4 (a). All other speeds are tested using the Thevenin load shown in Figure 4 (b). High-Z characteristics are tested for all speeds using the test load shown in Figure 4 (d). Document Number: 38-05232 Rev. *H Page 5 of 13 [+] Feedback CY7C1011CV33 Switching Characteristics Over the Operating Range [4] Parameter -10 Description Min -12 Max Min Max Unit Read Cycle tpower[5] VCC(Typical) to the First Access 1 1 μs tRC Read Cycle Time 10 12 ns tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid tDOE OE LOW to Data Valid 10 12 ns 10 12 ns 5 6 ns 3 Industrial/Automotive-A 3 Automotive-E Z[6] tLZOE OE LOW to Low tHZOE OE HIGH to High Z[6, 7] tLZCE CE LOW to Low tHZCE CE HIGH to High 8 0 3 Z[6, 7] tPU CE LOW to Power Up tPD CE HIGH to Power Down tDBE Byte Enable to Data Valid 0 5 Z[6] tLZBE Byte Enable to Low Z Byte Disable to High Z ns 3 5 0 Industrial/Automotive-A ns 6 ns 6 ns 0 ns 10 12 ns 5 6 ns Automotive-E tHZBE ns 8 0 0 5 ns 6 ns Write Cycle[8, 9] tWC Write Cycle Time 10 12 ns tSCE CE LOW to Write End 7 8 ns tAW Address Setup to Write End 7 8 ns tHA Address Hold from Write End 0 0 ns tSA Address Setup to Write Start 0 0 ns tPWE WE Pulse Width 7 8 ns tSD Data Setup to Write End 5 6 ns tHD Data Hold from Write End 0 0 ns 3 3 ns WE HIGH to Low Z[6] tHZWE WE LOW to High Z[6, 7] tBW Byte Enable to End of Write tLZWE 5 7 6 8 ns ns Notes 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, and input pulse levels of 0 to 3.0V. 5. tPOWER gives the minimum amount of time that the power supply is at typical VCC values until the first memory access is performed. 6. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device. 7. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of “AC Test Loads and Waveforms [3]” on page 5. Transition is measured ±500 mV from steady state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW, and BHE/BLE LOW. CE, WE, and BHE/BLE must be LOW to initiate a write. The transition of these signals terminate the write. The input data setup and hold timing is referenced to the leading edge of the signal that terminates the write. 9. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document Number: 38-05232 Rev. *H Page 6 of 13 [+] Feedback CY7C1011CV33 Switching Waveforms Figure 5. Read Cycle No. 1 (Address Transition Controlled)[10, 11] tRC RC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Figure 6. Read Cycle No. 2 (OE Controlled)[11, 12] ADDRESS tRC CE tACE OE tHZOE tDOE tLZOE BHE, BLE tHZCE tDBE tLZBE DATA OUT HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZBE DATA VALID HIGH IMPEDANCE tPD tPU 50% 50% ICC ISB Notes 10. Device is continuously selected. OE, CE, BHE, and/or BLE = VIL. 11. WE is HIGH for read cycle. 12. Address valid prior to or coincident with CE transition LOW. Document Number: 38-05232 Rev. *H Page 7 of 13 [+] Feedback CY7C1011CV33 Switching Waveforms (continued) Figure 7. Write Cycle No. 1 (CE Controlled)[13, 14] tWC ADDRESS tSA tSCE CE tAW tHA tPWE WE tBW BHE, BLE tSD tHD DATA IO Figure 8. Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tHA tPWE WE tSCE CE tSD tHD DATA I/O Notes 13. Data I/O is high impedance if OE, BHE, and/or BLE = VIH. 14. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state. Document Number: 38-05232 Rev. *H Page 8 of 13 [+] Feedback CY7C1011CV33 Switching Waveforms (continued) Figure 9. Write Cycle No. 3 (WE Controlled, LOW) tWC ADDRESS tSCE CE tAW tHA tSA tPWE WE tBW BHE, BLE tHZWE tSD tHD DATA I/O tLZWE Truth Table CE OE WE BLE BHE H X X X X High Z High Z Power Down Standby (ISB) L L H L L Data Out Data Out Read – All Bits Active (ICC) L L H L H Data Out High Z Read – Lower Bits Only Active (ICC) L L H H L High Z Data Out Read – Upper Bits Only Active (ICC) L X L L L Data In Data In Write – All Bits Active (ICC) L X L L H Data In High Z Write – Lower Bits Only Active (ICC) L X L H L High Z Data In Write – Upper Bits Only Active (ICC) L H H X X High Z High Z Selected, Outputs Disabled Active (ICC) Document Number: 38-05232 Rev. *H I/O0– I/O7 I/O8 – I/O15 Mode Power Page 9 of 13 [+] Feedback CY7C1011CV33 Ordering Information Speed (ns) 10 12 Package Diagram Ordering Code Package Type Operating Range CY7C1011CV33-10BVI 51-85150 48-ball (6 x 8 x 1 mm) VFBGA Industrial CY7C1011CV33-10ZSXA 51-85087 44-pin TSOP II (Pb-Free) Automotive-A CY7C1011CV33-12AXI 51-85064 44-pin TQFP (Pb-Free) Industrial CY7C1011CV33-12ZSXE 51-85087 44-pin TSOP II (Pb-Free) Automotive-E Package Diagrams Figure 10. 44-Pin Thin Small Outline Package Type II, 51-85087 51-85087-*A Document Number: 38-05232 Rev. *H Page 10 of 13 [+] Feedback CY7C1011CV33 Package Diagrams (continued) Figure 11. 44-Pin Thin Plastic Quad Flat Pack, 51-85064 12.00±0.25 SQ 10.00±0.10 SQ 44 34 0° MIN. 1 33 0.37±0.05 R. 0.08 MIN. 0.20 MAX. STAND-OFF 0.05 MIN. 0.15 MAX. 0.25 GAUGE PLANE R. 0.08 MIN. 0.20 MIN. 0-7° 0.20 MIN. 0.60±0.15 1.00 REF. 11 0.80 B.S.C. 23 DETAIL 12 A 22 NOTE: 1. JEDEC STD REF MS-026 SEATING PLANE 1.60 MAX. 12°±1° (8X) 1.40±0.05 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 0.10 0.20 MAX. SEE DETAIL Document Number: 38-05232 Rev. *H A 51-85064-*C Page 11 of 13 [+] Feedback CY7C1011CV33 Package Diagrams (continued) Figure 12. 48-Ball VFBGA (6 x 8 x 1 mm), 51-85150 BOTTOM VIEW TOP VIEW A1 CORNER Ø0.05 M C Ø0.25 M C A B A1 CORNER Ø0.30±0.05(48X) 2 3 4 5 6 6 5 4 3 2 1 C C E F G D E 2.625 D 0.75 A B 5.25 A B 8.00±0.10 8.00±0.10 1 F G H H A 1.875 A B 0.75 6.00±0.10 3.75 0.55 MAX. 6.00±0.10 0.10 C 0.21±0.05 0.25 C B 0.15(4X) 51-85150-*D Document Number: 38-05232 Rev. *H 1.00 MAX 0.26 MAX. SEATING PLANE C Page 12 of 13 [+] Feedback CY7C1011CV33 Document History Page Document Title: CY7C1011CV33, 2-Mbit (128K x 16) Static RAM Document Number: 38-05232 Issue Orig. of REV. ECN NO. Description of Change Date Change ** 117132 07/31/02 HGK New Data Sheet *A 118057 08/19/02 HGK Pin configuration for 48-ball FBGA correction *B 119702 10/11/02 DFP Updated FBGA to VFBGA; updated package code on page 8 to BV48A. Updated address pinouts on page 1 to A0 to A16. Updated CMOS standby current on page 1 from 8 to 10 mA *C 386106 See ECN PCI Added lead-free parts in Ordering Information Table *D 498501 See ECN NXR Corrected typo in the Logic Block Diagram on page# 1 Included the Maximum Ratings for Static Discharge Voltage and Latch up Current on page# 3 Changed the description of IIX from Input Load Current to Input Leakage Current in DC Electrical Characteristics table Updated the Ordering Information Table *E 522620 See ECN VKN Added Thermal Resistance Table *F 1891366 See ECN VKN/AESA Added -10ZSXA part Updated Ordering Information table *G 2428606 See ECN VKN/PYRS Corrected typo in the 44-Pin TSOP and 48-Ball FBGA pinout Removed Commercial parts Removed 15 ns speed bin Removed inactive parts from the Ordering Information table *H 2664421 02/25/09 VKN/AESA Added Automotive-E specs for 12 ns speed Updated Ordering Information table Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products PSoC Clocks & Buffers PSoC Solutions psoc.cypress.com clocks.cypress.com General Low Power/Low Voltage psoc.cypress.com/solutions psoc.cypress.com/low-power Wireless wireless.cypress.com Precision Analog Memories memory.cypress.com LCD Drive psoc.cypress.com/lcd-drive image.cypress.com CAN 2.0b psoc.cypress.com/can USB psoc.cypress.com/usb Image Sensors psoc.cypress.com/precision-analog © Cypress Semiconductor Corporation, 2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. 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Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 38-05232 Rev. *H Revised February 23, 2009 Page 13 of 13 All products and company names mentioned in this document are the trademarks of their respective holders. [+] Feedback