Ｄ１５ＸＢ６０ Case : 5S Unit : mm 600V 15A RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj V RM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load With heatsink Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque IFSM I2t Vdis TOR Tc=100℃ 50Hz sine wave, R-load Without heatsink Ta=25℃ 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 1ms≦t＜10ms Tj=25℃ Terminals to case, AC 1 minute （Recommended torque : 0.5N･m） ●Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions VF Forward Voltage I F=7.5A, Pulse measurement, Rating of per diode IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current θjc junction to case With heatsink Thermal Resistance θjl junction to lead Without heatsink θja junction to ambient Without heatsink ｗｗｗ．ａｓｅｍｉ．ｔｗ Ratings -40∼150 150 600 15 3.2 200 110 2.5 0.8 Unit ℃ ℃ V A Ratings Max.1.1 Max.10 Max.1.5 Max.5 Max.22 Unit V μA A A 2s kV N･m ℃/W D15XBx Forward Voltage Forward Current IF [A] 10 Tc=150°C [TYP] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] ｗｗｗ．ａｓｅｍｉ．ｔｗ 1.2 1.4 1.6 D15XBx Forward Power Dissipation 60 Forward Power Dissipation PF [W] SIN 50 40 30 20 10 0 0 5 10 15 20 Average Rectified Forward Current IO [A] Tj = 150°C Sine wave ｗｗｗ．ａｓｅｍｉ．ｔｗ 25 D15XBx Derating Curve 20 Average Rectified Forward Current IO [A] Heatsink Tc Tc SIN 15 10 5 0 80 90 100 110 120 130 140 Case Temperature Tc [°C] ｗｗｗ．ａｓｅｍｉ．ｔｗ 150 160 D15XBx Derating Curve Average Rectified Forward Current IO [A] 5 PCB 4 Glass-epoxy substrate Soldering land 5mmφ SIN 3 2 1 0 0 20 40 60 80 100 120 Ambient Temperature Ta [°C] ｗｗｗ．ａｓｅｍｉ．ｔｗ 140 160 D15XBx Peak Surge Forward Capability IFSM 250 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied Peak Surge Forward Current IFSM [A] 200 150 100 50 0 1 2 5 10 20 Number of Cycles [cycles] ｗｗｗ．ａｓｅｍｉ．ｔｗ 50 100