ISC D44D5

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistors
DESCRIPTION
·High DC Current Gain-hFE= 2000(Min)@ IC= 1A
·Complement to Type D45D1/2/3/4/5/6
APPLICATIONS
·Designed for use in power linear and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
D44D1
D44D2
VCEV
Collector-Emitter
Voltage
D44D3
-60
D44D4
-80
D44D5
-100
D44D6
-120
V
D44D1
D44D2
VCEO
VEBO
Collector-Emitter
Voltage
D44D3
-60
D44D4
-80
D44D5
-100
D44D6
-120
V
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-0.5
A
PC
Collector Power Dissipation@TC=25℃
125
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
D44D1/2/3/4/5/6
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistors
D44D1/2/3/4/5/6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
D44D1
D44D2
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
D44D3
-60
IC= -30mA ;IB=0
V
B
D44D4
-80
D44D5
-100
D44D6
-120
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -5A; IB= -20mA
-2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -10A; IB= -100mA
-3.0
V
VBE(on)
Base-Emitter On Voltage
IC= -5A ; VCE= -4V
-2.5
V
VECF-1
C-E Diode Forward Voltage
IF= -5A
-2.0
V
ICEO
Collector Cutoff Current
VCE= 1/2VCEOmax; IB= 0
-0.2
mA
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
1
VCB= /2VCBOmax;IE= 0;TC= 150℃
-0.4
-2.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-5
mA
hFE
DC Current Gain
IC= -1A ; VCE= -2V
isc Website:www.iscsemi.cn
B
2
2000