INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42/42A/42B/42C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- TIP42; -60V(Min)- TIP42A -80V(Min)- TIP42B; -100V(Min)- TIP42C ·Complement to Type TIP41/41A/41B/41C APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE TIP42 -40 TIP42A -60 TIP42B -80 TIP42C -100 TIP42 -40 TIP42A -60 TIP42B -80 TIP42C -100 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage -5 V Collector Current-Continuous -6 A Collector Current-Peak -10 A IB Base Current -2 A PC Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ IC ICM B Tj Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 65 W 2 150 ℃ -65~150 ℃ INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42/42A/42B/42C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN TIP42 -40 TIP42A -60 MAX IC= -30mA; IB= 0 UNIT V TIP42B -80 TIP42C -100 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A ;IB= -0.6A -1.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -4V -2.0 V -0.4 mA -0.7 mA -1.0 mA ICES ICEO TIP42 VCE= -40V; VEB= 0 TIP42A VCE= -60V; VEB= 0 Collector Cutoff Current TIP42B VCE= -80V; VEB= 0 TIP42C VCE= -100V; VEB= 0 TIP42/42A VCE= -30V; IB= 0 B Collector Cutoff Current TIP42B/42C VCE= -60V; IB= 0 B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.3A ; VCE= -4V 30 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 15 Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -10V 3 fT isc Website：www.iscsemi.cn 75 MHz INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42/42A/42B/42C isc Website：www.iscsemi.cn