Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current T vj= 25° C VCES 1200 V T C = 80 °C IC,nom. 100 A T C = 25 °C IC 150 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 70°C ICRM 200 A Gesamt-Verlustleistung total power dissipation T C=25°C, Transistor Ptot 0,78 kW VGES +/- 20V V IF 100 A IFRM 200 A I2t 4 k A2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. max. - 3,2 3,7 V - 3,85 - V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 100A, VGE = 15V, Tvj = 25°C VCE sat IC = 100A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 4mA, VCE = VGE, T vj = 25°C Gateladung gate charge VGE = -15V...+15V QG - 1,1 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 6,5 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 0,42 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 25°C ICES - - 5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: MOD-D2; Martin Knecht date of publication: 2003-01-13 approved by: SM TM; Wilhelm Rusche revision: 3.0 1 (8) DB_FF100R12KS4_3.0 2003-01-13 Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE = ±15V, RG = 9,1Ω, T vj = 25°C td,on - 0,10 - µs - 0,13 - µs IC = 100A, VCE = 600V VGE = ±15V, RG = 9,1Ω, T vj = 25°C tr VGE = ±15V, RG = 9,1Ω, T vj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 100A, VCE = 600V Fallzeit (induktive Last) fall time (inductive load) IC = 100A, VCE = 600V VGE = ±15V, RG = 9,1Ω, T vj = 25°C td,off VGE = ±15V, RG = 9,1Ω, T vj = 125°C VGE = ±15V, RG = 9,1Ω, T vj = 25°C tf - 0,09 - µs - 0,10 - µs - 0,53 - µs - 0,59 - µs - 0,06 - µs - 0,07 - µs Eon - 9,5 - mJ Eoff - 7,7 - mJ ISC - 650 - A LσCE - 20 - nH RCC‘+EE‘ - 0,7 - mΩ min. typ. max. - 2,0 2,4 V - 1,7 - V - 68 - A - 110 - A VGE = ±15V, RG = 9,1Ω, T vj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse max. IC = 100A, VCE = 600V VGE = ±15V, RG = 9,1Ω, T vj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) typ. IC = 100A, VCE = 600V, VGE = ±15V RG = 9,1Ω, T vj = 125°C, Lσ = 60nH IC = 100A, VCE = 600V, VGE = ±15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse RG = 9,1Ω, T vj = 125°C, Lσ = 60nH Kurzschlußverhalten SC Data T vj≤125°C, VCC=900V, VCEmax=VCES -LσCE ·di/dt tP ≤ 10µs, VGE ≤ 15V, RG = 9,1Ω Modulinduktivität stray inductance module Anschlüsse / terminals 2-3 Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip pro Zweig / per arm, T C=25°C Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 100A, VGE = 0V, Tvj = 25°C VF IF = 100A, VGE = 0V, Tvj = 125°C IF = 100A, - diF/dt = 1000A/µs VR = 600V, VGE = -15V, Tvj = 25°C IRM VR = 600V, VGE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 100A, - diF/dt = 1000A/µs VR = 600V, VGE = -15V, Tvj = 25°C Qr VR = 600V, VGE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy - 7,5 - µC - 20,0 - µC - 4,0 - mJ - 9,5 - mJ IF = 100A, - diF/dt = 1000A/µs VR = 600V, VGE = -15V, Tvj = 25°C VR = 600V, VGE = -15V, Tvj = 125°C 2 (8) Erec DB_FF100R12KS4_3.0 2003-01-13 Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,08 RthJC Innerer Wärmewiderstand Transistor / transistor,DC , pro Modul / per module thermal resistance, junction to case Transistor / transistor,DC , pro Zweig / per arm - - 0,16 K/W Diode / Diode, DC, pro Modul / per module - - 0,15 K/W Diode / Diode, DC, pro Zweig / per arm - - 0,30 K/W Übergangs-Wärmewiderstand pro Modul / per module thermal resistance, case to heatsink pro Zweig / per arm RthCK K/W - 0,01 - K/W - 0,02 - K/W λ Paste = 1 W/m*K / λ grease = 1 W/m*K Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj max - - 150 °C Betriebstemperatur operation temperature T vj op -40 - 125 °C Lagertemperatur storage temperature T stg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance distance 11 mm CTI comperative tracking index 425 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube / screw M6 M 3 - 6 Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M6 M 2,5 - 5 Gewicht weight G 340 Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8) DB_FF100R12KS4_3.0 2003-01-13 Technische Information / Technical Information FF100R12KS4 IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) VGE = 15V 200 175 Tvj = 25°C 150 Tvj = 125°C IC [A] 125 100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 5,0 5,5 6,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) Tvj = 125°C 200 175 VGE = 8V 150 VGE = 9V VGE = 10V IC [A] 125 VGE = 12V VGE = 15V 100 VGE = 20V 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 VCE [V] 4 (8) DB_FF100R12KS4_3.0 2003-01-13 Technische Information / Technical Information FF100R12KS4 IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 200 175 Tvj = 25°C Tvj = 125°C 150 IC [A] 125 100 75 50 25 0 5 6 7 8 9 10 11 12 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 200 175 Tvj = 25°C Tvj = 125°C 150 IF [A] 125 100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5 (8) DB_FF100R12KS4_3.0 2003-01-13 Technische Information / Technical Information FF100R12KS4 IGBT-Module IGBT-Modules Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=±15V, RG =9,1 Ω, VCE = 600V, Tvj = 125°C 30 Eon Eoff 25 Erec E [mJ] 20 15 10 5 0 0 20 40 60 80 100 120 140 160 180 200 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=±15V , IC = 100A , VCE = 600V , Tvj = 125°C 30 Eon Eoff 25 Erec E [mJ] 20 15 10 5 0 0 5 10 15 20 25 30 RG [Ω] 6 (8) DB_FF100R12KS4_3.0 2003-01-13 Technische Information / Technical Information FF100R12KS4 IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) 1 Zth:Diode Zth:IGBT 0,01 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT τi [s] : IGBT ri [K/kW] : Diode τi [s] : Diode 1 2 3 4 71,26 54,24 34,43 0,06 0,006 0,029 0,043 1,014 81,89 122,02 63,19 32,9 0,006 0,035 0,033 0,997 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE =±15V, Rg = 9,1 Ω, Tvj= 125°C 250 200 IC [A] ZthJC [K / W] 0,1 IC,Modul 150 IC,Chip 100 50 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7 (8) DB_FF100R12KS4_3.0 2003-01-13 Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Gehäusemaße / Schaltbild Package outline / Circuit diagram 8 (8) DB_FF100R12KS4_3.0 2003-01-13