DMC20402 Silicon NPN epitaxial planar type Unit: mm For general amplification Features High forward current transfer ratio hFE with excellent linearity Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B6 Basic Part Number Dual DSC2002 (Individual) Packaging DMC204020R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Tr2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 500 mA Peak collector current ICP 1 A Total power dissipation PT 300 mW Tj 150 °C Tstg –55 to +150 °C Overall Junction temperature Storage temperature 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) Panasonic JEITA Code (C1) 6 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) Mini6-G4-B SC-74 SOT-457 (B2) 5 Tr1 1 (E1) (E2) 4 Tr2 2 (B1) 3 (C2) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 hFE1 VCE = 10 V, IC = 150 mA 120 hFE2 VCE = 10 V, IC = 500 mA 40 VCE(sat) IC = 300 mA, IB = 30 mA 0.1 fT VCE = 10 V, IC = 50 mA 160 VCB = 10 V, IE = 0, f = 1 MHz 4.8 Forward current transfer ratio *1 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Cob 0.1 340 0.6 µA V MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement Publication date: January 2013 Ver. CED 1 DMC20402 DMC20402_PT-Ta IC VCE 400 300 300 200 100 2.4 mA 2.1 mA 400 1.8 mA 1.5 mA 300 1.2 mA 200 0.9 mA 0.6 mA 100 40 80 120 160 0 200 0.3 mA 0 2 4 500 Collector current IC (mA) IC / IB = 10 Ta = 85°C 25°C −30°C 1 10 100 100 50 VCE = 10 V 0 12 1 1 000 Ta = 85°C 25°C −30°C 200 100 0 0.4 0.8 Base-emitter voltage VBE (V) Collector current IC (mA) 1 000 Cob VCB 300 0 100 DMC20402_Cob-VCB VCE = 10 V 400 10 Collector current IC (mA) IC VBE 1 0.01 10 −30°C 150 DMC20402_IC-VBE VCE(sat) IC 0.1 8 25°C 200 Collector-emitter voltage VCE (V) DMC20402_VCEsat-IC 10 6 250 1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 Ta = 85°C 2.7 mA Forward current transfer ratio hFE Collector current IC (mA) Total power dissipation PT (mW) IB = 3.0 mA 500 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) hFE IC 600 Ta = 25°C 0 DMC20402_hFE-IC DMC20402_IC-VCE PT Ta 20 IE = 0 f = 1 MHz Ta = 25°C 16 12 8 4 0 1 10 100 Collector-base voltage VCB (V) DMC20402_fT-IC fT IC Transition frequency fT (MHz) 250 VCE = 10 V Ta = 25°C 200 150 100 50 0 0.1 1 10 100 Collector current IC (mA) Ver. CED 2 DMC20402 Mini6-G4-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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