IXYS DSEP2X25-12C

DSEP 2x25-12C
HiPerDynFREDTM Epitaxial Diode
with soft recovery
IFAV = 2x25 A
VRRM = 1200 V
trr
= 30 ns
VRSM
VRRM
V
V
SOT-227 B,
miniBLOC
1200
1200
Type
DSEP 2x 25-12C
Symbol
Test Conditions
Maximum Ratings
IFRMS
IFAVM
TC = 90°C; rectangular, d = 0.5
100
25
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
250
A
EAS
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
0.2
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
-40...+150
150
-40...+150
°C
°C
°C
210
W
2500
V~
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS, IISOL ≤ 1 mA
Md
mounting torque (M4)
terminal connection torque (M4)
Weight
typical
Symbol
Test Conditions
IR
①
1.1-1.5/9-13
1.1-1.5/9-13
30
Nm/lb.in.
Nm/lb.in.
g
Characteristic Values
typ.
max.
VR = VRRM; TVJ = 25°C
TVJ = 150°C
0.25
2.0
mA
mA
3.0
4.7
V
V
0.6
VF ②
IF = 25 A;
RthJC
RthCH
with heatsink compound
0.1
K/W
K/W
trr
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
30
ns
IRM
VR = 100 V; IF = 50 A;
-diF/dt = 100 A/µs; TVJ = 100°C
3.0
TVJ = 125°C
TVJ = 25°C
4.0
Features
• International standard package miniBLOC
• Isolation voltage 2500 V~
• UL registered E 72873
• 2 independent FRED in 1 package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
A
Dimensions see Outlines.pdf
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0%
② Pulse Width = 300 µs, Duty Cycle < 2.0%
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
0544
Data according to IEC 60747 and per diode unless otherwise specified.
1-2
DSEP 2x25-12C
80
800
nC
700
A
Qr
60
IF
25
TVJ = 100°C
VR = 600 V
40
20
IRM
600
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
TVJ = 100°C
VR = 600 V
A
IF = 60 A
IF = 30 A
IF = 15 A
500
IF = 60 A
IF = 30 A
IF = 15 A
15
400
10
300
20
5
200
0
0
1
2
3
4
5
VF
100
100
6 V7
Fig. 1 Forward current IF
versus VF
0
A/µs 1000
-diF/dt
0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
trr
Kf
1.5
600 A/µs
800 1000
-diF/dt
40
TVJ = 100°C
VR = 600 V
ns
140
2.0
400
Fig. 3 Peak reverse current IRM
versus -diF/dt
160
2.5
200
0.6
TVJ = 100°C
IF = 100 A
V
µs
30
120
tfr
VFR
IF = 60 A
IF = 30 A
IF = 15 A
100
0.5
20
0.4
80
1.0
60
IRM
tfr
10
0.3
0.5
40
Qrr
VFR
0.0
20
0
40
80
120 C 160
0
0
200
400
TVJ
600
800 1000
A/µs
0
200
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
1
400
0.2
600 A/µs
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR, tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
ZthJC
0.1
0.01
0.001
i
Rthi (K/W)
ti (s)
1
2
3
4
5
0.037
0.07
0.246
0.176
0.07
0.00024
0.0036
0.0235
0.142
0.7
DSEP 2x25-12C
0.01
0.1
s
1
10
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
0544
Fig. 7 Transient thermal resistance junction to case
2-2