DSS30101L Features Mechanical Data • • • • • • • Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Device (Note 2) ESD rating: 400V-MM, 8KV-HBM • • • Case: SOT-23 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) C C B Top View E B E Device Symbol Pin Configuration Ordering Information Part Number DSS30101L-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information ZN3 Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DSS30101L Document number: DS31588 Rev. 3 - 2 Mar 3 YM ADVANCE INFORMATION LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR 2010 X Apr 4 ZN3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 1 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D August 2010 © Diodes Incorporated DSS30101L @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Symbol VCBO VCEO VEBO ICM IC Value 50 30 5 2 1 Unit V V V A A Value 600 209 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG 3. Device mounted on FR-4 PCB MRP 400 P(pk), PEAK TRANSIENT POWER (W) 0.8 PD, POWER DISSIPATION (W) 0.6 0.4 RθJA = 209°C/W 0.2 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) Single Pulse RθJA(t) = r(t) * RθJA RθJA = 175°C/W 300 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 200 100 0 0.00001 0.001 0.1 10 1,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION Maximum Ratings D = 0.9 D = 0.7 D = 0.5 0.1 D = 0.3 D = 0.1 RθJA(t) = r(t) * RθJA RθJA = 175°C/W D = 0.05 0.01 P(pk) D = 0.02 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DSS30101L Document number: DS31588 Rev. 3 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 3 Transient Thermal Response 2 of 6 www.diodes.com 100 1,000 10,000 August 2010 © Diodes Incorporated DSS30101L Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage (Note 4) VCE(sat) Equivalent On-Resistance (Note 4) Base-Emitter Saturation Voltage (Note 4) Base-Emitter Turn-on Voltage (Note 4) RCE(sat) VBE(sat) VBE(on) Min 50 30 5 ⎯ ⎯ ⎯ 300 300 200 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Symbol V(BR)CBO V(BR)CEO V(BR)EBO Transition Frequency fT 100 250 ⎯ Output Capacitance Input Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Cobo Cibo ton td tr toff ts tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 9 65 57 19 38 340 315 25 15 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current IEBO DC Current Gain (Note 4) hFE Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 450 ⎯ ⎯ ⎯ ⎯ ⎯ 0.93 0.80 Max ⎯ ⎯ ⎯ 100 50 100 ⎯ 900 ⎯ 75 125 200 200 1.1 1.1 Unit V V V nA μA nA Test Conditions IC = 100μA IC = 10mA IE = 100μA VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 150°C VEB = 4V, IC = 0 VCE = 5V, IC = 50mA ⎯ VCE = 5V, IC = 0.5A VCE = 5V, IC = 1A IC = 0.1A, IB = 1mA mV IC = 0.5A, IB = 50mA IC = 1.0A, IB = 100mA mΩ IE = 1A, IB = 100mA V IC = 1A, IB = 100mA V VCE = 2V, IC = 1A VCE = 5V, IC = 100mA, MHz f = 100MHz pF VCB = 10V, f = 1MHz pF VEB = 5V, f = 1MHz ns ns ns VCC = 5V, IC = 500mA, ns IB1 = -IB2 = 50mA ns ns 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 1,200 2.2 1,100 2.0 IB = 5mA 1.8 IB = 4mA 1.6 1.4 IB = 3mA 1.2 1.0 IB = 2mA 0.8 0.6 1,000 hFE, DC CURRENT GAIN Notes: IC, COLLECTOR CURRENT (A) ADVANCE INFORMATION Electrical Characteristics @TA = 25°C unless otherwise specified IB = 1mA 900 TA = 125°C 800 TA = 85°C 700 600 400 300 200 0.2 100 0 Document number: DS31588 Rev. 3 - 2 TA = -55°C 0 0.001 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DSS30101L TA = 25°C 500 0.4 0 TA = 150°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical DC Current Gain vs. Collector Current 3 of 6 www.diodes.com August 2010 © Diodes Incorporated DSS30101L 500 RCE(SAT), EQUIVALENT ON-RESISTANCE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.2 0.1 T A = 150°C TA = 85°C TA = 125°C TA = 25°C TA = -55°C 0 0.001 VCE = 5V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 T A = 85°C T A = 150°C 0.2 TA = 125°C 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 IC/IB = 10 450 400 350 300 250 T A = 125°C 200 150 T A = 150°C TA = 85°C T A = 25°C 100 TA = -55°C 50 0 0.01 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Equivalent On-Resistance vs. Collector Current 10 1.4 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 150°C TA = 125°C 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 150 120 CAPACITANCE (pF) ADVANCE INFORMATION 0.3 f = 1MHz 90 Cibo 60 30 Cobo 0 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Fig. 10 Typical Capacitance Characteristics DSS30101L Document number: DS31588 Rev. 3 - 2 4 of 6 www.diodes.com August 2010 © Diodes Incorporated DSS30101L ADVANCE INFORMATION Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X DSS30101L Document number: DS31588 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com August 2010 © Diodes Incorporated DSS30101L ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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