MMBT3904LP 40V NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Complementary PNP Type Available (MMBT3906LP) Ultra-Small Leadless Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0008 grams (approximate) C DFN1006-3 B B C E Bottom View Device Symbol E Top View Device Schematic Ordering Information (Note 3) Product MMBT3904LP-7 MMBT3904LP-7B Notes: Marking 1N 1N Reel size (inches) 7 7 Tape width (mm) 8mm 8mm Quantity per reel 3,000 10,000 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information MMBT3904LP-7 1N Top View Dot Denotes Collector Side MMBT3904LP Document number: DS31835 Rev. 3 - 2 MMBT3904LP-7B 1N 1N = Product Type Marking Code Top View Bar Denotes Base and Emitter Side 1 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3904LP Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 4) Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage and Temperature Range Notes: 4. Device mounted on FR-4 PCB pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 RθJA(t) = r(t) * RθJA RθJA = 500°C/W D = 0.05 0.01 P(pk) t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.01 D = 0.005 0.001 1E-06 D = Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 100 1,000 10,000 0.4 1,000 Single Pulse PD, POWER DISSIPATION (W) P(pk), PEAK TRANSIENT POWER (W) t1 D = 0.02 RθJA(t) = r(t) * RθJA RθJA = 500°C/W 100 TJ - TA = P * RθJA(t) 10 1 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation Document number: DS31835 Rev. 3 - 2 Note 4 0.2 0.1 0 0.1 1E-06 MMBT3904LP 0.3 2 of 5 www.diodes.com 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Dissipation vs. Ambient Temperature February 2011 © Diodes Incorporated MMBT3904LP Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) Symbol Min Max Unit BVCBO BVCEO BVEBO ICEX IBL 60 40 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(sat) ⎯ 0.20 0.30 V Base-Emitter Saturation Voltage VBE(sat) 0.65 ⎯ 0.85 0.95 V Cobo Cibo hie hre hfe hoe ⎯ ⎯ 1.0 0.5 100 1.0 4.0 8.5 10 8.0 400 40 pF pF kΩ -4 x 10 ⎯ μS Current Gain-Bandwidth Product fT 300 ⎯ MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Notes: ⎯ Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 5. Short duration pulse test used to minimize self-heating effect. 0.14 400 IB = 2mA IB = 1.6mA IB = 1.8mA VCE = 1V T A = 150°C IB = 1.4mA IB = 1.2mA 0.10 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 0.12 IB = 1mA 0.08 IB = 0.8mA IB = 0.6mA 0.06 IB = 0.4mA 0.04 300 T A = 125°C TA = 85°C 200 100 T A = 25°C TA = -55°C IB = 0.2mA 0.02 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage MMBT3904LP Document number: DS31835 Rev. 3 - 2 3 of 5 www.diodes.com 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current February 2011 © Diodes Incorporated MMBT3904LP 1 1 IC/IB = 20 0.1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 150°C TA = 125°C TA = 85°C T A = 25°C TA = -55°C TA = 125°C 0.1 T A = 85°C T A = -55°C 0.01 0.1 0.01 0.1 1.1 1.2 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VCE = 5V 1.0 0.9 TA = -55°C 0.8 0.7 TA = 25°C 0.6 TA = 150°C 0.5 TA = 125°C 0.4 0.3 0.1 TA = 25°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) T A = 150°C TA = 85°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current Gain = 10 1.0 0.8 TA = -55°C TA = 25°C 0.6 TA = 150°C TA = 125°C 0.4 T A = 85°C 0.2 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current Package Outline Dimensions A A1 D b1 E e b2 L2 MMBT3904LP Document number: DS31835 Rev. 3 - 2 L3 DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 4 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3904LP Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com MMBT3904LP Document number: DS31835 Rev. 3 - 2 5 of 5 www.diodes.com February 2011 © Diodes Incorporated