ECH8901 Ordering number : ENA1472 SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting. Mounting height 0.9mm. IECO is guaranteed for preventing reverse flow from the collector to the emitter. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current VCBO VCEO VEBO Collector Current (Pulse) IC ICP Base Current IB Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg --30 V --30 V --5 V --3 A --6 --600 When mounted on ceramic substrate (900mm2×0.8mm) 1unit A mA 1.3 W 150 °C --55 to +150 °C [FET] Drain-to-Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) IDP Gate-to-Source Voltage PW≤10μs, duty cycle≤1% Marking : LA --12 V ±10 V --6 A --40 A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21010EA TK IM TC-00002268 No. A1472-1/6 ECH8901 Continued from preceding page. Parameter Allowable Power Dissipation Symbol Conditions Ratings Unit When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W W Total Dissipation PD PT Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [TR] Collector Cutoff Current ICBO IEBO VCB= --30V, IE=0A --0.1 μA VEB= --4V, IC=0A --0.1 μA IECO VEC= --4.5V, IB=0A --1 μA VCE= --2V, IC= --500mA Gain-Bandwidth Product hFE fT Output Capacitance Cob Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf 200 VCE= --10V, IC= --500mA 380 VCB= --10V, f=1MHz IC= --1.5A, IB= --30mA IC= --1.5A, IB= --75mA IC= --1.5A, IB= --30mA IC= --10μA, IE=0A IC= --1mA, RBE=∞ IE= --10μA, IC=0A 560 MHz 25 pF --140 --200 mV --90 --135 mV --0.83 --1.2 V --30 V --30 V --5 V See specified Test Circuit. 50 ns See specified Test Circuit. 270 ns See specified Test Circuit. 25 ns [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS1 IDSS2 Cutoff Voltage IGSS VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time ID=--1mA, VGS=0V VDS=--8V, VGS=0V VDS=--12V, VGS=0V --12 V --1 VGS=±8V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--3A ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz --0.4 6.6 μA --10 μA ±10 μA --1.4 11 V S 21 28 mΩ 31 45 mΩ 49 78 mΩ 1000 pF 320 pF 250 pF td(on) VDS=--6V, f=1MHz See specified Test Circuit. 11 ns Rise Time tr See specified Test Circuit. 72 ns Turn-OFF Delay Time See specified Test Circuit. 105 ns Fall Time td(off) tf See specified Test Circuit. 87 ns Total Gate Charge Qg nC Qgs VDS=--6V, VGS=--4.5V, ID=--6A VDS=--6V, VGS=--4.5V, ID=--6A 11 Gate-to-Source Charge 1.5 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, VGS=--4.5V, ID=--6A IS=--6A, VGS=0V 2.9 --0.81 nC --1.2 V Note : The specifications shown above are for each individual transistor. No. A1472-2/6 ECH8901 Package Dimensions Electrical Connection unit : mm (typ) 7011A-006 8 7 6 5 1 2 3 4 1 : Emitter 2 : Base 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Collector 8 : Collector Top View 0.25 2.9 0.15 8 5 2.3 2.8 0 t o 0.02 Top view 4 0.25 1 0.65 0.3 0.07 0.9 1 : Emitter 2 : Base 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Collector 8 : Collector SANYO : ECH8 Switching Time Test Circuit [TR] IB1 Vout IB2 RL + 100μF 470μF VCC= --12V IC -- VCE --3 0m A A --40m A [TR] 50Ω S IC -- VBE --3.0 [TR] VCE= --2V --10mA 0m --2 --2.5 --8mA --50mA Collector Current, IC -- A --1.2 ECH8901 P.G --2.0 --1.4 VOUT G IC=20IB1= --20IB2=500mA --1.6 D PW=10μs D.C.≤1% + VBE=5V --1.8 ID= --2A RL=3Ω --6mA --1.0 --4mA --0.8 --0.6 --2mA --0.4 --2.0 --1.5 Ta=75° C 50Ω VDD= --6V VIN VIN RB VR 0V --4.5V Collector Current, IC -- A PW=20μs D.C.≤1% INPUT [FET] --1.0 25°C --25°C Bot t om View --0.5 --0.2 0 IB=0mA 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Collector-to-Emitter Voltage, VCE -- V --0.9 --1.0 IT14663 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT14664 No. A1472-3/6 ECH8901 hFE -- IC 5 [TR] hFE -- IC 5 [TR] VCE= --0.5V VCE= --2V Ta=75°C Ta=75°C 3 2 DC Current Gain, hFE DC Current Gain, hFE 25°C --25°C 100 25°C 2 --25°C 100 7 5 --0.01 3 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 5 --0.01 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A IT14665 f T -- IC 7 3 [TR] Cob -- VCB 100 [TR] Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 7 3 2 100 7 5 3 --0.01 5 3 2 10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 7 --1.0 5 2 3 5 7 2 --10 3 Collector-to-Base Voltage, VCB -- V IT14667 VCE(sat) -- IC 3 [TR] [TR] IC / IB=50 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --100 7 5 IT14668 VCE(sat) -- IC 7 IC / IB=20 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 f=1MHz VCE= --10V 5 3 IT14666 3 2 --100 5 °C 75 = Ta 3 5 --2 2 °C C 5° 2 7 °C 75 5 = Ta °C 25 °C --25 3 2 --10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A [TR] --10 7 5 Collector Current, IC -- A Ta= --25°C 7 75°C 25°C 3 2 --0.01 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 IT14671 7 --0.1 2 3 5 7 --1.0 2 3 5 IT14670 ASO [TR] ICP= --6A 1m IC= --3A DC --1.0 7 5 s 10 op 10 m 0m er s ati s on 3 2 --0.1 7 5 3 2 2 5 2 2 5 3 Collector Current, IC -- A IC / IB=50 --1.0 2 s 0μ 10 μs 500 Base-to-Emitter Saturation Voltage, VBE(sat) -- V --10 --0.01 5 IT14669 VBE(sat) -- IC 3 3 Ta=25°C Single pulse --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE -- V 2 3 5 IT14672 No. A1472-4/6 ECH8901 ID -- VDS --2 --7 --6 --5 --4 --3 --2 --1 C --25°C 1.5V V GS= -- Ta= 75° C --3 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 80 --3.0A --1.5A 60 50 ID= --0.5A 30 20 10 0 0 --2 --4 --6 3 2 | yfs | -- ID 3 2 [FET] C 5° --2 = °C Ta 75 1.0 7 5 C 5° 3 2 2 0.1 7 5 [FET] A 60 --0.5 , I D= --1.8V = V GS 50 A --1.5 V, I D= 40 --2.5 V GS= .0A I = --3 --4.5V, D = V GS 30 20 10 --40 --20 0 20 40 60 80 100 120 160 IT12950 IS -- VSD --10 7 5 3 2 140 [FET] VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 2 0.01 --0.001 2 3 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 Drain Current, ID -- A SW Time -- ID 1000 0.001 5 7 --10 IT12951 5 [FET] 2 td(off) 100 tf 7 5 3 tr 2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT12952 Ciss, Coss, Crss -- VDS 3 [FET] f=1MHz 2 Ciss, Coss, Crss -- pF 3 0 Diode Forward Voltage, VSD -- V VDD= --6V VGS= --4.5V 7 Switching Time, SW Time -- ns --2.5 IT12948 Ambient Temperature, Ta -- ∞C VDS= --6V 10 7 5 --2.0 70 IT12949 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 --1.5 RDS(on) -- Ta 0 --60 --8 Gate-to-Source Voltage, VGS -- V --1.0 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ [FET] 90 40 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 70 0 IT12947 RDS(on) -- VGS 100 0 --1.0 5°C 25°C --25° C --0.1 Ta= 7 0 25° --1 0 [FET] VDS= --6V --8 Drain Current, ID -- A --4 ID -- VGS --10 --9 --4.5 V --4.0 V Drain Current, ID -- A --5 [FET] --2.5V --1. 8V --8.0V --6.0V --6 Ciss 1000 7 5 Coss 3 Crss 2 td(on) 10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT12953 100 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12954 No. A1472-5/6 ECH8901 VGS -- Qg --100 7 5 3 2 VDS= --6V ID= --6A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 11 12 IT12955 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 10 --10 7 5 3 2 ASO IDP= --40A 1m s ID= --6A 10 DC ms 10 0m op era s tio --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12956 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12957 Note on usage : Since the ECH8901 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No. A1472-6/6