EXCELICS EFA025A-100P

EFA025A-70
Low Distortion GaAs Power FET
UPDATED 04/28/2006
FEATURES
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None-Hermetic Low Cost Ceramic 70mil Package
+20.0 dBm Output Power at 1dB Compression
10.0 dB Power Gain at 12GHz
7.0 dB Power Gain at 18GHz
Typical 1.50 dB Noise Figure and
10.0 dB Associated Gain at 12GHz
0.3 x 250 Micron Recessed “Mushroom” Gate
Si3N4 Passivation
Advanced Epitaxial Heterojunction Profile Provides High
Power Efficiency, Linearity and Reliability
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
NF
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 12GHz
VDS = 6V, IDS ≈ 50% IDSS
f = 18GHz
Gain at 1dB Compression
f = 12GHz
f = 18GHz
VDS = 6V, IDS ≈ 50% IDSS
Power Added Efficiency at 1dB Compression
VDS = 6V, IDS ≈ 50% IDSS
f = 12GHz
Noise Figure VDS = 3V, IDS = 15mA
f = 12GHz
GA
Associate Gain VDS = 3V, IDS = 15mA
IDSS
Saturated Drain Current
GM
Transconductance
VP
Pinch-off Voltage
VDS = 3 V, IDS = 1.0 mA
BVGD
Drain Breakdown Voltage
IGD = 1.0mA
-10
-15
BVGS
RTH
Source Breakdown Voltage
Thermal Resistance
IGS = 1.0mA
-6
-14
370*
SYMBOL
P1dB
G1dB
PAE
MIN
17.0
8.5
f = 12GHz
VDS = 3 V, VGS = 0 V
35
VDS = 3 V, VGS = 0 V
30
TYP
20.0
20.0
10.0
7.0
MAX
UNITS
dBm
dB
35
%
1.5
dB
10
dB
65
105
mA
40
-2.0
mS
-3.5
V
V
V
C/W
o
Notes: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOL
CHARACTERISTIC
VALUE
VDS
Drain to Source Voltage
6V
VGS
Gate to Source Voltage
-4 V
IDS
Drain Current
52 mA
IGSF
Forward Gate Current
1 mA
PIN
Input Power
PT
Total Power Dissipation
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
@ 3dB compression
310 mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised May 2006
EFA025A-70
Low Distortion GaAs Power FET
UPDATED 04/28/2006
S-PARAMETERS
VDS = 3V, IDS ≈ 15mA
FREQ
(GHz)
1.0
--- S11 --MAG
ANG
--- S21 --MAG
ANG
--- S12 --MAG
ANG
--- S22 --MAG
ANG
1.020
4.385
0.030
0.549
-17.0
159.6
75.6
-22.5
2.0
0.956
-37.8
3.291
142.6
0.043
64.4
0.611
-28.0
3.0
0.911
-56.4
3.114
125.5
0.060
52.4
0.601
-41.2
4.0
0.867
-73.0
2.944
109.6
0.072
42.4
0.577
-52.4
5.0
0.814
-89.2
2.856
93.8
0.084
32.3
0.535
-63.9
6.0
0.748
-105.5
2.697
78.2
0.089
22.3
0.514
-78.5
7.0
0.689
-124.2
2.523
64.0
0.092
14.6
0.511
-85.8
8.0
0.656
-144.7
2.424
49.6
0.096
6.5
0.489
-92.9
9.0
0.636
-151.0
2.334
36.0
0.098
-2.9
0.384
-111.2
10.0
0.584
-166.5
2.283
21.7
0.096
-4.4
0.390
-131.4
11.0
0.545
164.8
2.150
7.2
0.095
-10.8
0.432
-132.6
12.0
0.552
142.3
2.040
-5.8
0.095
-15.2
0.409
-133.6
13.0
0.589
134.6
1.982
-20.5
0.102
-21.4
0.351
-168.6
14.0
0.563
120.6
1.877
-36.0
0.100
-31.0
0.371
162.5
15.0
0.571
96.0
1.672
-50.1
0.096
-35.6
0.387
166.7
16.0
0.607
73.2
1.625
-63.4
0.098
-41.9
0.374
168.3
17.0
0.625
77.3
1.617
-78.1
0.108
-49.6
0.392
116.3
18.0
0.618
58.5
1.411
-92.5
0.105
-58.9
0.476
108.4
19.0
0.643
42.1
1.361
-102.2
0.109
-68.8
0.428
110.5
20.0
0.691
26.8
1.329
-116.0
0.103
-80.6
0.411
101.9
21.0
0.653
22.4
1.294
-135.8
0.105
-95.7
0.539
62.8
22.0
0.634
13.4
1.160
-146.5
0.103
-105.5
0.620
64.2
23.0
0.655
-8.1
1.172
-161.2
0.110
-120.8
0.479
61.0
24.0
0.646
-25.3
1.170
178.6
0.119
-141.1
0.478
34.5
25.0
0.563
-39.9
1.074
160.7
0.118
-159.4
0.624
17.3
26.0
0.596
-47.4
1.048
149.8
0.132
-169.1
0.562
15.8
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3
Revised May 2006
EFA025A-70
Low Distortion GaAs Power FET
UPDATED 04/28/2006
S-PARAMETERS
VDS = 3V, IDS ≈ ½ Idss
FREQ
(GHz)
--- S11 --MAG
ANG
--- S21 --MAG
ANG
--- S12 --MAG
ANG
--- S22 --MAG
ANG
1.0
0.985
-18.8
3.482
161.4
0.013
76.6
0.803
-11.3
2.0
0.953
-38
3.329
142.7
0.025
65.9
0.786
-24.1
3.0
0.913
-56
3.108
125.5
0.031
54.2
0.768
-36
4.0
0.872
-73.2
2.97
109.5
0.037
46.2
0.755
-45.6
5.0
0.825
-89.3
2.867
94.3
0.04
38.8
0.731
-54.5
6.0
0.779
-102.7
2.713
79.7
0.04
34.4
0.703
-66.2
7.0
0.734
-117.1
2.559
65.3
0.039
30.9
0.685
-76.8
8.0
0.688
-130.5
2.448
52.1
0.033
33.5
0.66
-85.6
9.0
0.642
-152.3
2.42
37.6
0.037
44.6
0.661
-91.4
10.0
0.614
-173.2
2.355
21.8
0.044
48.1
0.654
-102.2
11.0
0.591
177.4
2.312
8.6
0.054
50.4
0.642
-117.7
12.0
0.572
163.7
2.282
-5.4
0.071
50.2
0.641
-131.9
13.0
0.598
138.2
2.188
-22
0.086
40.5
0.638
-144.4
14.0
0.631
115.4
2.036
-38.8
0.097
29.4
0.642
-158.9
15.0
0.631
102.2
1.97
-54.9
0.112
18.3
0.667
179.8
16.0
0.634
87.3
1.909
-72.4
0.126
5.6
0.685
158.4
17.0
0.658
70.3
1.685
-87.7
0.128
-2.1
0.665
145.1
18.0
0.694
59
1.58
-99.5
0.15
-17.2
0.731
132.5
19.0
0.672
42
1.467
-116.1
0.137
-30.5
0.761
113.1
20.0
0.707
25.5
1.399
-132.9
0.143
-43.3
0.836
96.6
21.0
0.761
14.9
1.29
-148.4
0.143
-56.3
0.826
84.7
22.0
0.736
3.9
1.184
-161.3
0.138
-68.7
0.83
76
23.0
0.703
-15.3
1.103
-178.5
0.134
-84.6
0.824
58.8
24.0
0.723
-33.5
1.043
162.6
0.134
-101.6
0.841
41.2
25.0
0.705
-44.7
1.017
146.3
0.14
-117.8
0.843
28.4
26.0
0.676
-59.8
1.017
131.8
0.156
-131
0.831
16.6
FREQ
(GHz)
Gamma Opt
MAG
ANG
NOISE-PARAMETERS
VDS = 3V, IDS ≈ 15mA
2
4
6
8
10
12
14
16
18
20
22
24
26
0.83
0.75
0.65
0.58
0.45
0.40
0.41
0.47
0.53
0.62
0.57
0.59
0.57
28
59
85
128
147
-170
-111
-69
-44
-14
1
39
66
Nfmin
(dB)
Rn/50
0.53
0.65
0.85
1.05
1.35
1.55
1.90
2.25
2.60
2.90
3.20
3.50
3.80
0.58
0.48
0.33
0.21
0.11
0.10
0.27
0.58
1.00
1.38
1.68
1.77
1.10
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 3
Revised May 2006