EMX4 / UMX4N / IMX4 Transistors High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 !External dimensions (Units : mm) !Features 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.95pF) 0.22 (5) (2) (1) 0.5 !Equivalent circuits (3) (2) 1.2 1.6 0.13 (6) EMX4 / UMX4N (3) (4) 0.5 0.5 1.0 1.6 EMX4 IMX4 (1) (4) (5) Each lead has same dimensions ROHM : EMT6 (6) 0.65 VEBO 3 V IC 50 mA EMX4 / UMX4N Collector power dissipation 150(TOTAL) Pc IMX4 mW 300(TOTAL) Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 1.3 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 ∗1 IMX4 ∗2 (4) ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. (3) Collector current 0.7 Emitter-base voltage 0.1Min. (1) V (2) 18 0~0.1 VCEO (6) V Collector-emitter voltage (5) Unit 30 0.15 Limits VCBO 0.3 Symbol Collector-base voltage 0.9 2.1 !Absolute maximum ratings (Ta=25°C) Parameter 0.65 (6) 1.25 2.0 (1) 0.95 0.95 1.9 2.9 (2) (2) (3) (1) (6) (5) (5) 0.2 (4) (3) (4) UMX4N 1.6 Type EMX4 UMX4N IMX4 Package EMT6 UMT6 SMT6 Marking Code X4 T2R X4 TR X4 T108 Basic ordering unit (pieces) 8000 3000 3000 0.3Min. 1.1 0~0.1 !Package, marking, and packaging specifications 0.8 0.15 2.8 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 30 − − V IC=10µA Conditions Collector-emitter breakdown voltage BVCEO 18 − − V IC=1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO 3 − − − − 0.5 V µA IE=10µA VCB=10V VEB=2V Emitter cutoff current IEBO − − 0.5 µA DC current transfer ratio hFE 27 − 270 − VCE/IC=10V/10mA VCE(sat) hFE1 / hFE2 − − 0.5 1 2 V − IC/IB=20mA/4mA 0.5 600 − 1500 − MHz 0.95 1.6 pF Collector-emitter saturation voltage hFE pairing Transition frequency fT Output capacitance Cob ∗Transition frequency of the device. VCE/IC=10V/10mA VCE/IC=10V/10mA, f=200MHz VCB/f=10V/1MHz, IE=0A ∗