EPA040A-70 High Efficiency Heterojunction Power FET UPDATED 11/22/2004 FEATURES • • • • • • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE +25.5 dBm OUTPUT POWER AT 1dB COMPRESSION 7.0 dB POWER GAIN AT 12GHz 0.3 x 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVICES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS1 MIN 21.5 TYP 23.5 23.5 10.5 7.0 P1dB Output Power at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS f = 12GHz f = 18GHz G1dB Gain at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS f = 12GHz f = 18GHz PAE Power Added Efficiency at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS f = 12GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 70 120 GM Transconductance VDS = 3 V, VGS = 0 V 80 130 VP Pinch-off Voltage VDS = 3 V, IDS = 1.0 mA BVGD Drain Breakdown Voltage IGD = 1.0mA -9 -15 BVGS Source Breakdown Voltage IGS = 1.0mA -6 -14 RTH 9.0 MAX UNITS dBm dB 45 % -1.0 Thermal Resistance 160 mA mS -2.5 V V V o 250* C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOL PARAMETERS 1 2 ABSOLUTE CONTINUOURS VDS Drain to Source Voltage 10 V 6V VGS Gate to Source Voltage -6 V -3 V IDS Drain Current Idss 75 mA IGSF Forward Gate Current 20 mA 3 mA PIN Input Power 20 dBm @ 3dB compression PT Total Power Dissipation 550mW 455mW TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/+175°C -65/+150°C Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2004 EPA040A-70 High Efficiency Heterojunction Power FET UPDATED 11/22/2004 S-PARAMETERS 6V, 1/2 Idss FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.948 -35.2 0.846 -66.9 0.753 -93.4 0.676 -118.2 0.620 -140.9 0.584 -158.2 0.552 -177.3 0.527 165.1 0.540 139.6 0.567 119.0 0.573 105.6 0.596 89.7 0.668 73.3 0.717 58.9 0.731 44.4 0.748 28.6 0.744 18.0 0.772 8.9 0.784 -7.3 0.809 -20.0 0.788 -29.3 0.747 -41.8 0.762 -59.5 0.772 -73.4 0.693 -89.6 0.679 -111.5 --- S21 --MAG ANG 9.101 150.6 7.892 124.5 6.667 103.2 5.797 84.5 5.131 67.6 4.584 52.4 4.133 37.4 3.768 23.5 3.473 8.3 3.201 -7.1 3.058 -21.8 2.916 -37.2 2.662 -52.4 2.395 -66.9 2.248 -83.7 2.067 -101.6 1.835 -114.4 1.768 -127.1 1.597 -143.9 1.484 -160.4 1.401 -175.3 1.337 170.2 1.218 152.4 1.100 133.5 1.067 116.8 1.065 98.2 --- S12 --MAG ANG 0.021 70.0 0.035 55.8 0.043 44.7 0.049 36.8 0.053 30.8 0.056 27.7 0.059 23.8 0.060 21.8 0.066 20.1 0.072 13.6 0.080 7.2 0.088 -0.9 0.092 -10.0 0.094 -19.8 0.097 -32.4 0.095 -46.9 0.093 -52.3 0.101 -70.2 0.086 -85.7 0.081 -101.5 0.081 -116.7 0.082 -133.9 0.083 -153.9 0.088 -173.7 0.103 169.3 0.130 151.4 --- S22 --MAG ANG 0.643 -17.1 0.585 -33.4 0.538 -46.2 0.503 -55.8 0.459 -65.0 0.417 -77.2 0.401 -88.6 0.370 -97.7 0.363 -107.1 0.348 -122.4 0.338 -143.5 0.344 -163.9 0.329 176.9 0.337 157.9 0.382 134.6 0.411 110.5 0.405 96.9 0.471 85.8 0.503 68.2 0.551 52.0 0.549 38.9 0.538 29.7 0.515 10.7 0.502 -11.8 0.529 -25.6 0.500 -42.5 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2004