epc130/epc131 Photo-receiver Amplifier General Description Features The epc13x family products are monolithic, integrated high sensitive photo-diode amplifiers for light-barrier, light-curtain, and the like applications. It amplifies current pulses from reverse-biased PIN photodiodes (e.g. epc300) and generates an analog output signal, driven by a push-pull output stage. This device allows the design of short to long range light barriers from a few millimeters up to tens of meters. Low current consumption High sensitivity Analog output CSP6 package with very small footprint and standard QFN16 pack age available Applications The analog output can be analyzed by signal processing circuitry in oder to extract weak optical signals on a heavy noise floor. Thus, very sensitive light barriers or other optical sensors can be built with very limited effort. The epc13x is controlled by a digital controller, which uses no ex- ternal clock signal. The device has been optimized to utilize the least count of external components. Light barriers ranging from millimeters to tens of meters Light curtains Smoke detectors Liquid detectors Heart beat monitors epc134-epc139 are the same devices but with an digital output. Please refer to the corresponding data sheet. Device selection table Model Output digital analog Light Reserve Output Response Time w/o slow epc130 x x epc131 x x with fast Sensitivity low medium high very high x x epc134 x x epc135 x x epc136 x x epc137 x x epc138 x x epc139 x x x x x x x x x x x x x x Functional Block Diagram VDD PD AMP SIGNAL PROCESSOR OUT CN CONTROLLER VSS © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 1 Datasheet epc13x analog - V2.1 www.espros.ch epc130/epc131 Absolute Maximum Ratings (Notes 1, 2) Recommended Operating Conditions Power Supply Voltage V DD -5.5V to +5.5V Voltage to Any Pin -0.3 to V DD +0.3V Min. Max. Units Power Supply Voltage (V DD) 4.0 5.2 V Maximum Power Dissipation 300mW Storage Temperature Range (T S) Lead Temperature solder, 4 sec. (T L) -40°C to +85°C Operating Temperature (T A) -40° +85° C +260°C Humidity (non-condensing) +5 +95 % Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions indic ate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifica tions and test conditions, see Electrical Characteristics. Note 2: This device is a highly sensitive CMOS ac current amplifier with an ESD rating of JEDEC HBM class 0 (<250V). Handling and as sembly of this device should only be done at ESD protected workstations. Electrical Characteristics VDD = 5.0 V, -40°C < T A < +85°C, output load 20 kOhm/20 pF, except as specified Symbol Parameter Conditions/Comments Values Min. IDD VPK Power Supply Current Sensitivity VPD Reversed Photodiode Voltage R1=27k, no photo current 0.8 1.2 epc131 R1=4k7, no photo current 1.1 1.5 epc130 IPD = 80 nA 320 mV epc131 IPD = 800 nA 320 mV VDD1.55 V relative to VDD VOF Output Offset Voltage 1.4 Output Voltage Limits 0.3 FOUT Output Noise Voltage (RMS) epc130 epc131 CPD Photodiode Capacitance epc130 epc131 1.55 1.7 mA V VDD-1.0 V mV IPD = 100 μA 35 40 IPD = 3.0 mA 80 100 IPD = 100 μA 40 50 90 100 IPD = 3.0 mA DC Light Current Range Max. epc130 VOUT IPDDC Units Typ. Refer to section Application Information, Ambient Light 0.0 3.0 mA Refer to section Application Information, Photodiode Capacitance 15 50 pF 30 40 IOUT Output Current Push-pull driving capability +100 μA VPOR Power-up Threshold Voltage The voltage at VDD when the device starts up and the startup time is running. 3.0 3.5 4.0 V VIPOR 0.5 0.75 1.0 V 1.5 ms Hysteresis On power-up threshold voltage tINIT Power-up Startup Time VDD slew rate >100V/ms tREC Recovery Time epc130 epc131 tPD Input Pulse Width at Pin PD epc130 epc131 trf Input pulse slew rate epc130 epc131 RPD Photodiode bias resistor epc130 epc131 © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice After the reception of a valid pulse current at pin PD until the output is stable at its operation voltage. R efer also to Other Parameters section. Current pulse width at pin PD necessary to generate an output signal at pin OUT. The input sensitivity is de pendent on the input current pulse width (refer to the section Applications). -100 400 μs 50 6 μs 0.75 μs Recommended rise and fall time of the current pulse at pin PD 500 ns 50 ns refer to section 'Application Information, Photodiode Resistor' 27 kΩ 2 4.7 Datasheet epc13x analog - V2.1 www.espros.ch epc130/epc131 Connection Diagrams 12 8 4 11 5 10 CN 13 6 PD 9 VSS 14 7 Top View Top View 15 2 3 6 1 VN 5 16 OUT VDD 1 6-Pin Chip Scale Package (CSP) 2 3 4 16-Pin QFN Package 6-Pin CSP 16 Pin QFN Pin Name Description 1 16 OUT 2 3 VN 3 13 VDD 4 8 CN External capacitor for background light current regulator. 5 11 PD Anode of photo diode. This is the analog input of the amplifier/filter circuitry. 6 5 VSS Negative power supply pin. n/a 1 NC Not connected. n/a 2 NC Not connected. n/a 4 NC Not connected. n/a 6 NC Not connected. n/a 7 NC Not connected. n/a 9 NC Not connected. n/a 10 NC Not connected. n/a 12 NC Not connected. n/a 14 NC Not connected. n/a 15 NC Not connected. Push-pull output pin. Negative power supply pin through a reverse-polarity protection diode. Positive power supply pin. PIN Connections QFN16-VEED1VN4 LST 01.02.2010 Page 1 File: Unbenannt This document is confidential and protected by law and international trades. It must not be shown to any third party nor be copied in any form without our written permission . © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 3 Datasheet epc13x analog - V2.1 www.espros.ch epc130/epc131 Other Parameters (typical values, T amb = 25°C, VDD = 5.0V, IPD=0mA) epc130 1.2 1 Relative Sensitivity 1 Relative Sensitivity epc131 1.2 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0 0 0 2 4 6 8 10 12 14 0 0.2 Emitting Pulse Length (μs) epc130 - 100nA 2.0 1.95 1.90 1.8 1.85 1.7 OUT (V) OUT (V) 1.4 epc131 - 800nA 2.00 1.9 1.6 1.5 1.80 1.75 1.70 1.65 1.4 1.60 1.3 1.55 1.2 1.50 0 20 40 60 80 100 120 140 160 0 Time [μs] Photo diode current pulse 800nA epc130 - 100µA 5.0 5 10 15 20 25 30 35 40 45 50 Time [μs] Photo diode current pulse 100nA epc131 - 1mA 5.0 4.5 4.5 4.0 4.0 3.5 3.5 OUT (V) OUT (V) 0.4 0.6 0.8 1 1.2 Emitting Pulse Length (μs) 3.0 2.5 2.0 3.0 2.5 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0 0 0 50 100 150 200 250 300 350 400 Photo diode current pulse 100µA © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 50 100 150 200 250 300 350 400 Time [μs] Time [μs] Photo diode current pulse 1mA 4 Datasheet epc13x analog - V2.1 www.espros.ch epc130/epc131 Functional Description Power-up Sequence If VDD reaches VPOR, the startup sequence is initiated. After the time t DEL, the photo diode bias circuit is enabled. Thus, a current generated by light on the photo diode flows into the pin PD. After the time tINIT, the device is ready to receive AC light pulses. VDD VPOR Startup Period Ready tINIT Out undefined output signal Power-up sequence Power-down Sequence When VDD goes down, the device is turned off when V DD is below VPOR minus VIPOR. VDD VPOR - VIPOR PD bias tOFF Power-down sequence Light Pulse Reception A light pulse on the photo diode generates a current puls into the pin PD of the device. This current pulse is transformed to a voltage pulse and amplified. The signal form is dependent on the input pulse width, its slew rate and its strength. The value of the undershoot is als heavily dependent on the input signal. If the input signal is too strong, the output signal becomes saturated close to V DD, or VSS respectively. After a waiting time given by tREC, the next light pulse can be sent. If the waiting time is too short, the output signal of the next pulse is biased. TIR LED IR LED Pulse TPD PD Signal Out Signal VPK VOF tREC Light pulse reception © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 5 Datasheet epc13x analog - V2.1 www.espros.ch epc130/epc131 Application Information Light Barrier Application The following circuit is recommended to operate the epc130/131 as a photo diode amplifier in a single beam light barrier: +VLED Light path D2 D1 C1 C3 R1 VDD PD OUT analog output to μC epc13x Type T1 from digital oscillator or μC output VN CN C2 VSS R2 GND LED Recommended Components Values R1: 27k for epc130 and 4.7k for epc131 (bias resistor). Sensitivity can be reduced by the reduction of this resistor. R2: dependent on the required LED current C1: Usually not needed. May be up to 100 pF (refer to section 'Photodiode Capacitance'). C2: 33nF (DC input current filter capacitor) C3: 100nF or more (power supply filter capacitor) D1: PIN photo diode, epc3xx-family or similar devices D2: IR LED, TSML1000 (Vishay) or similar devices Working Principle The IR LED D2 emits light pulses which are sent towards the photo diode D1. If there is no obstacle between the two devices, the light pulse generates an AC current (IPD) in the reverse biased photo diode D1 into the pin PD. I PD is proportional to the power of the light pulse. The current pulse is transformed to a voltage amplified. Once a light pulse is generated by the IR LED, a next light pulse must not be generated until the recovery time t REC (max.). Design Precautions The sensitivity at pin PD is very high in order to achieve a long operation range of light barriers even without lenses in front of the IR LED and/or the photo diode. Thus, the pin PD is very sensitive to EMI. Special care should be taken to keep the PCB track at pin PD as short as possible (a few mm only!). This track should be kept away from the IR LED signal tracks and from other sources which may induce unwanted signals. It is strongly recommended to cover the chip, the pho todiode and all passive components around the chip with a metal shield. A recommended part is shown in the follow ing figure: The pins at the bottom are to solder the shield to the PCB with electrical connection to VDD. The hole in the front is the opening window for the photo diode. The back side of the PCB below the sensitive area (D1, C1, R1, epc13x) shall be a polygon connected to VDD to shield the circuit from the back side. C1 must be of high mechanical stability (no piezoelectric effect) in order to avoid unwanted signals by mechanical shock or vibration. Recommended EMC shield Ambient Light Photodiode DC current can be generated by ambient light, e.g. sun light. DC currents at pin PD do not generate a DC output signal. Thus, the offset voltage V OF remains constant. However, if I PDDC is above the stated value, the input is saturated which blocks the detection of AC current pulses. Photodiode Capacitance If the photodiode capacitance is below the specified value, the system becomes more sensitive to power supply ripple voltage at higher fre quencies (>200kHz). This sensitivity can be reduced by a parallel capacitor to the photodiode. However, this measure reduces the detection sensitivity. If the photo diode capacity is above the specified value, a lower detection sensitivity and a possible higher sensitivity spread re sults. © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 6 Datasheet epc13x analog - V2.1 www.espros.ch Layout Information (all measures in mm, ) CSP-6 Package Designed Mechanical Dimensions Approved Scale Page Part Name <Name> 26.02.2009 <Name> <Data> M 1:1 DIN A4 1 Part No. <x000 000> <Partname> This document is confidential and protec ted by law and international trades . It must not be shown to any third party nor be copied in any form witho ut our writt en permission . epc130/epc131 Layout Recommendations File: Unbenannt 0.56 solder balls Sn97.5Ag2.5 0.3 1.4 +0.0/-0.1 Pin 1 0.14 ±0.01 0.43 1.0 +0.0/-0.1 0.56 0.43 ∅ 0.3 0.1524 1.56 ∅ 0.12 0.43 0.43 1.98 no solder mask inside this area QFN16 Package according to JEDEC Standard: Bottom View 0.25 Top view 1.9 2.9 - 3.1 1.9 0.5 0.1-0.2 0.02 0.9 2.9 - 3.1 0.25 LST Mechanical dimension QFN16 Package 0.3 01.02.2010 Page 1 File: Unbenannt This document is confidential and protected by law and international trades. It must not be shown to any third party nor be copied in any form without our written permission. © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 7 Datasheet epc13x analog - V2.1 www.espros.ch epc130/epc131 Reflow Solder Profile For infrared or conventional soldering the solder profile has to follow the recommendations of IPC/JEDEC J-STD-020C (min. revision C) for Pb-free assembly for both types of packages. The peak soldering t emperature (TL) should not exceed +260°C for a maximum of 4 sec. Packaging Information (all measures in mm) Tape & Reel Information The devices are mounted on embossed tape for automatic placement systems. The tape is wound on 178 mm (7 inch) or 330 mm (13 inch) reels and individually packaged for shipment. General tape-and-reel specification data are available in a separate data sheet and indicate the tape sizes for various package types. Further tape-and-reel specifications can be found in the Electronic Industries Association (EIA) standard 481-1, 481-2, 481-3. CSP6 Tape QFN16 Tape Pin 1 12 8 Pin 1 2 8 epc does not guarantee that there are no empty cavities. CSP6 Thus,Tape the pick-and-place machine QFN16 the Tape presence of a chip during Pin 1 should do check Pinpicking. 1 12 8 Order Information Part Number epc130-CSP6 epc130-QFN16 epc131-CSP6 epc131-QFN16 © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice Package RoHS compliance Packaging Method CSP6 Yes Reel QFN16 Yes Reel CSP6 Yes QFN16 Yes 4 8 8 Reel Reel Datasheet epc13x analog - V2.1 www.espros.ch epc130/epc131 IMPORTANT NOTICE ESPROS Photonics AG and its subsidiaries (epc) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to epc’s terms and conditions of sale supplied at the time of order acknowledgment. epc warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with epc’s standard war ranty. Testing and other quality control techniques are used to the extent epc deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. epc assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applic ations using epc components. 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Further, Buyers must fully indemnify epc and its representatives against any damages arising out of the use of epc products in such safety-critical applications. epc products are neither designed nor intended for use in military/aerospace applications or environments unless the epc products are spe cifically designated by epc as military-grade or "enhanced plastic." Only products designated by epc as military-grade meet military specific ations. Buyers acknowledge and agree that any such use of epc products which epc has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. epc products are neither designed nor intended for use in automotive applications or environments unless the specific epc products are designated by epc as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, epc will not be responsible for any failure to meet such requirements. © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 9 Datasheet epc13x analog - V2.1 www.espros.ch