FDD850N10L N-Channel PowerTrench® MOSFET 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • RDS(on) = 64 mΩ ( Typ.) @ VGS = 5 V, ID = 12 A • Low Gate Charge ( Typ. 22.2 nC) • Low Crss ( Typ. 42 pF) • Fast Switching Applications • 100% Avalanche Tested • Consumer Appliances • Improve dv/dt Capability • LED TV and Monitor • RoHS Compliant • Uninterruptible Power Supply • Micro Solar Inverter D D G D-PAK G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Pulsed Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL V 11.1 - Continuous (TC = 100oC) Drain Current ±20 15.7 Drain Current IDM Unit V - Continuous (TC = 25oC) ID EAS FDD850N10L 100 - Derate above 25oC A (Note 1) 63 A (Note 2) 41 mJ (Note 3) 6.0 V/ns 50 W 0.33 W/oC -55 to +175 o C 300 o C Thermal Characteristics Symbol Parameter FDD850N10L RθJC Thermal Resistance, Junction to Case, Max. 3.0 RθJA Thermal Resistance, Junction to Ambient, Max. 87 ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C0 1 Unit o C/W www.fairchildsemi.com FDD850N10L N-Channel PowerTrench® MOSFET March 2013 Device Marking FDD850N10L Device FDD850N10L Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.1 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 VDS = 80V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 VGS = VDS, ID = 250μA ID = 250μA, Referenced to 25oC nA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 - 2.5 V VGS = 10V, ID = 12A - 61 75 mΩ VGS = 5V, ID = 12A VDS = 10V, ID = 15.7A - 64 96 mΩ - 31 - S - 1100 1465 pF - 80 105 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V VGS = 10V VGS = 5V Qg(tot) Total Gate Charge at 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 80V ID = 15.7A - 42 - pF - 22.2 28.9 nC - 12.3 16.0 nC - 3.0 - nC - 5.7 - nC - 17 44 ns - 21 52 ns - 27 64 ns - 8 26 ns - 1.75 - Ω Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) VDD = 50V, ID = 15.7A VGS = 5V, RGEN = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 15.7 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 63 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.3 V trr Reverse Recovery Time - 38 - ns Qrr Reverse Recovery Charge VGS = 0V, VDS = 80V, ISD = 15.7A dIF/dt = 100A/μs - 50 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 9.1A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 15.7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C0 2 www.fairchildsemi.com FDD850N10L N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 6.0V 5.0V 3.5V 3.0V *Notes: 1. VDS = 10V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 10 10 o 175 C o 25 C o -55 C 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 0 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 IS, Reverse Drain Current [A] 0.16 0.12 VGS = 5V 0.08 VGS = 10V 0.04 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.00 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 5000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.20 RDS(ON) [Ω], Drain-Source On-Resistance 2 4 VGS, Gate-Source Voltage[V] Ciss Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 0.1 VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 Crss *Note: ID = 15.7A 0 1 10 VDS, Drain-Source Voltage [V] ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C0 0 100 3 4 8 12 16 20 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FDD850N10L N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 0.90 -100 *Notes: 1. VGS = 0V 2. ID = 250μA -50 0 50 100 150 o TJ, Junction Temperature [ C] *Notes: 1. VGS = 10V 2. ID = 12A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 15 100μs ID, Drain Current [A] ID, Drain Current [A] 1.0 18 10 1ms Operation in This Area is Limited by R DS(on) 10ms 100ms DC *Notes: 12 VGS = 10V 9 VGS = 5V 6 o 1. TC = 25 C 3 o 0.01 0.1 1.5 Figure 10. Maximum Drain Current 100 0.1 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area vs. Case Temperature 1 2.5 2. TJ = 175 C 3. Single Pulse o RθJC = 3.0 C/W 1 10 VDS, Drain-Source Voltage [V] 0 25 100 200 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 4 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 t2 *Notes: Single pulse o 1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 -5 10 ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C0 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 1 www.fairchildsemi.com FDD850N10L N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDD850N10L N-Channel PowerTrench® MOSFET 5V ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C0 5 www.fairchildsemi.com FDD850N10L N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C0 6 www.fairchildsemi.com FDD850N10L N-Channel PowerTrench® MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C0 8 www.fairchildsemi.com FDD850N10L N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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