FDP030N06B_F102 N-Channel PowerTrench® MOSFET 60V, 195A, 3.1mΩ Features Description • RDS(on) = 2.67mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low FOM RDS(on)*QG • Low reverse recovery charge, Qrr • Soft reverse recovery body diode • Enables highly efficiency in synchronous rectification Application • Fast Switching Speed • Synchronous Rectification for ATX / Server / Telecom PSU • 100% UIL Tested • Battery Protection Circuit • RoHS Compliant • DC motor drives and Uninterruptible Power Supplies D G G TO-220 D S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V - Continuous (TC = 25oC, Silicon Limited) 195* - Continuous (TC = 100oC, Silicon Limited) 138* - Continuous (TC = 25oC, Package Limited) 120 - Pulsed (Note 1) 780 A (Note 2) 600 mJ 6.0 V/ns (Note 3) A (TC = 25oC) 205 W - Derate above 25oC 1.37 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL FDP030N06B_F102 60 o -55 to +175 C 300 oC FDP030N06B_F102 Units * Package limitation current is 120A. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max 0.73 RθJA Thermal Resistance, Junction to Ambient, Max 62.5 ©2012 Fairchild Semiconductor Corporation FDP030N06B_F102 Rev.C0 1 o C/W www.fairchildsemi.com FDP030N06B_F102 Channel PowerTrench® MOSFET September 2012 Device Marking FDP030N06B Device FDP030N06B_F102 Package TO-220 Description F102: Trimmed Leads Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V ID = 250µA, Referenced to 25oC - 0.03 - V/oC Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250µA, VGS = 0V VDS = 48V, VGS = 0V - - 1 µA IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 2 - 4 V Static Drain to Source On Resistance - 2.67 3.1 mΩ gFS Forward Transconductance VGS = 10V, ID = 100A VDS = 10V, ID = 100A - 206 - S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Vplateau Gate Plateau Volatge Qoss Output Charge VDS = 30V, VGS = 0V f = 1MHz - 6035 8030 pF - 1685 2240 pF - 55 - pF VDS = 30V, VGS = 0V - 2619 - pF - 76 99 nC VDS = 30V, ID = 100A VGS = 10V - 29 - nC - 12 - nC - 5.2 - V VDS = 30V, VGS = 0V - 92.4 - nC - 32 74 ns VDD = 30V, ID = 100A VGS = 10V, RGEN = 4.7Ω - 33 76 ns (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) (Note 4) Drain Open, f = 1MHz - 56 122 ns - 23 56 ns - 2.0 - Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 195* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 780 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 100A - - 1.25 V trr Reverse Recovery Time - 71 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 100A dIF/dt = 100A/µs - 78 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 20A, Starting TJ = 25°C 3. ISD ≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FDP030N06B_F102 Rev.C0 2 www.fairchildsemi.com FDP030N06B_F102 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 400 100 100 10 *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 2 0.1 ID, Drain Current[A] ID, Drain Current[A] *Notes: 1. VDS = 10V 2. 250µs Pulse Test VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1 VDS, Drain-Source Voltage[V] o o -55 C 175 C 10 1 10 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 400 3.0 VGS = 10V 2.5 VGS = 20V 2.0 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 1.5 0 100 200 300 ID, Drain Current [A] 400 1 0.2 500 2. 250µs Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10000 10 1000 100 Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.5 RDS(ON) [mΩ], Drain-Source On-Resistance o 25 C 1 10 VDS, Drain-Source Voltage [V] FDP030N06B_F102 Rev.C0 Crss VDS = 12V VDS = 30V VDS = 48V 8 6 4 2 *Note: ID = 100A 0 60 0 3 20 40 60 Qg, Total Gate Charge [nC] 80 90 www.fairchildsemi.com FDP030N06B_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250µA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.6 1.4 1.2 1.0 *Notes: 1. VGS = 10V 2. ID = 100A 0.8 0.6 -100 200 Figure 9. Maximum Safe Operating Area vs. Case Temperature -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current 200 1000 VGS = 10V 100 100µs 10 ID, Drain Current [A] ID, Drain Current [A] 175 1ms Operation in This Area is Limited by R DS(on) 1 10ms 100ms DC SINGLE PULSE o TC = 25 C 0.1 150 125 100 75 50 o TJ = 175 C 25 o 0 25 0.01 1 10 VDS, Drain-Source Voltage [V] 100 Figure 11. Eoss vs. Drain to Source Voltage 175 200 100 IAS, AVALANCHE CURRENT (A) 2.5 EOSS, [µJ] 50 75 100 125 150 o TC, Case Temperature [ C] Figure 12. Unclamped Inductive Switching Capability 3.0 2.0 1.5 1.0 0.5 0.0 o RθJC = 0.73 C/W RθJC = 0.73 C/W 0 10 20 30 40 50 VDS, Drain to Source Voltage [V] FDP030N06B_F102 Rev.C0 TJ = 25 oC 10 1 0.001 60 TJ = 150 oC 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) 4 www.fairchildsemi.com FDP030N06B_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP030N06B_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.2 PDM 0.1 0.1 0.03 -5 10 FDP030N06B_F102 Rev.C0 t1 0.05 0.02 0.01 Single pulse t2 *Notes: o 1. ZθJC(t) = 0.73 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDP030N06B_F102 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform D G S Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP030N06B_F102 Rev.C0 6 www.fairchildsemi.com FDP030N06B_F102 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP030N06B_F102 Rev.C0 7 www.fairchildsemi.com FDP030N06B_F102 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 (F102: Trimmed Leads) FDP030N06B_F102 Rev.C0 8 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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