FAIRCHILD FDS8670_08

FDS8670
tm
30V N-Channel PowerTrench® MOSFET
General Description
Features
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low Rds(on) has been
maintained to provide an extremely versatile device.
•
21 A, 30 V
•
High performance trench technology for extremely low
•
Minimal Qgd (5.5 nC typical)
Max RDS(ON) = 3.7 mΩ @ VGS = 10 V
Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V
RDS(ON) and gate charge
Applications
•
100% RG tested (0.9 Ω typical)
•
100% UIL tested
•
RoHS Compliant
High Efficiency DC-DC Converters:
•
Notebook Vcore Power Supply
•
Telecom Brick Synchronous Rectifier
•
Multi purpose Point Of Load
•
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
PD
Power Dissipation
6
3
7
2
8
1
– Continuous
(Note 1a)
Thermal Resistance, Junction-to-Case
V
21
A
2.5
(Note 1b)
1.2
V
W
1
433
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
±20
105
(Note 1c)
RθJC
Units
(Note 1a)
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
RθJA
Ratings
30
– Pulsed
EAS
TJ, TSTG
4
TA=25oC unless otherwise noted
Parameter
VDSS
5
Package Marking and Ordering Information
mJ
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8670
FDS8670
13’’
12mm
2500 units
©2008 Fairchild Semiconductor Corporation
FDS8670 Rev D1 (W)
FDS8670 30V N-Channel PowerTrench® MOSFET
January 2008
Symbol
Parameter
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
TA = 25°C unless otherwise noted
Test Conditions
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V,
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
µA
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
ID = 250 µA
On Characteristics
ID = 250 µA
Min Typ Max Units
30
ID = 250 µA, Referenced to 25°C
V
mV/°C
39
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS,
1
VGS = 10 V,
ID = 21 A
VGS = 4.5 V,
ID = 18 A
VGS=10 V, ID =21 A, TJ=125°C
3.3
4.2
4.4
gFS
Forward Transconductance
VDS = 10 V,
118
ID = 250 µA, Referenced to 25°C
Input Capacitance
Coss
Output Capacitance
ID = 21 A
VDS = 15 V,
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
3
V
mV/°C
–5
Dynamic Characteristics
Ciss
1.4
V GS = 0 V,
3.7
5.0
5.5
S
4040
pF
1730
pF
160
f = 1.0 MHz
0.2
mΩ
0.9
pF
1.5
Ω
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
12
21
ns
11
20
ns
td(off)
Turn–Off Delay Time
56
90
ns
tf
Turn–Off Fall Time
68
108
ns
Qg(TOT)
Total Gate Charge at VGS = 10V
58.5
82
nC
Qg(TOT)
Total Gate Charge at VGS = 5V
30
42
Qgs
Gate–Source Charge
9.5
nC
Qgd
Gate–Drain Charge
5.5
nC
VDD = 15 V,
ID = 21 A
Drain–Source Diode Characteristics and Maximum Ratings
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
IRM
Diode Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 2.1 A
IF = 21 A,
dIF/dt = 100 A/µs
(Note 2)
0.7
51
1.2
nC
V
ns
1.5
A
37
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
2
mounted on a 1 in
pad of 2 oz copper
b) 105°/W when
2
mounted on a .04 in
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 17A, VDD = 30V, VGS = 10V
FDS8670 Rev D1 (W)
FDS8670 30V N-Channel PowerTrench® MOSFET
Electrical Characteristics
VGS = 10V
ID, DRAIN CURRENT (A)
87.5
3.4
3.0V
6.0V
VGS = 2.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
105
3.5V
70
4.5V
52.5
35
2.5V
17.5
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
3.5V
4.0V
4.5V
6.0V
1
10V
35
70
ID, DRAIN CURRENT (A)
105
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.011
ID = 21A
VGS = 10V
ID = 10.5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.0V
1.6
0
1.4
1.2
1
0.8
0.008
TA = 125oC
0.005
TA = 25oC
0.002
0.6
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
2
150
1000
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
70
TA =125oC
6
8
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
105
35
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
ID, DRAIN CURRENT (A)
2.2
0.4
2
Figure 1. On-Region Characteristics.
1.6
2.8
-55oC
VGS = 0V
100
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
o
25 C
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
0.0001
3.5
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8670 Rev D1 (W)
FDS8670 30V N-Channel PowerTrench® MOSFET
Typical Characteristics
5000
f = 1MHz
VGS = 0 V
ID = 21A
4000
8
VDS = 10V
20V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
15V
4
Ciss
3000
2000
Coss
1000
2
Crss
0
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
50
0
60
Figure 7. Gate Charge Characteristics.
30
100
10
10s
1
100µs
1ms
10ms
100ms
1s
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
o
TA = 25 C
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
80
60
40
20
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1000
100
5
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
0.001
0.0001
0.001
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8670 Rev D1 (W)
FDS8670 30V N-Channel PowerTrench® MOSFET
Typical Characteristics (continued)
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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
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WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
D
Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.
2.
A critical component in any component of a life support, device
or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
FDS8670 Rev D1 (W)
FDS8670 30V N-Channel PowerTrench® MOSFET
TRADEMARKS