FAIRCHILD FDZ7296

FDZ7296
30V N-Channel PowerTrench BGA MOSFET
General Description
Features
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ7296
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
11 A, 30 V.
RDS(ON) = 12 mΩ @ VGS = 4.5 V
Applications
•
RDS(ON) = 8.5 mΩ @ VGS = 10 V
High-side Mosfet in DC-DC converters for Server
and Notebook applications
•
Occupies only 0.10 cm2 of PCB area:
1/3 the area of SO-8.
•
Ultra-thin package: less than 0.80 mm height
when mounted to PCB.
•
High performance trench technology for extremely
low RDS(ON)
•
Optimized for low Qg and Qgd to enable fast
switching and reduce CdV/dt gate coupling
D
D
D
S
S
S
S
S
S
S
S
S
G
S
S
D
D
D
Pin 1
7296
Pin 1
D
G
S
Top
Absolute Maximum Ratings
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
o
TA=25 C unless otherwise noted
Parameter
Ratings
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
30
±20
11
20
2.1
–55 to +150
V
V
A
W
°C
Thermal Characteristics
RθJA
RθJB
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
60
6.3
0.6
°C/W
Package Marking and Ordering Information
Device Marking
7296
2004 Fairchild Semiconductor Corporation
Device
FDZ7296
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
FDZ7296 Rev B (W)
FDZ7296
November 2004
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage.
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = ±20 V,
30
V
mV/°C
27
1
±100
µA
nA
1.8
–4.9
3
V
mV/°C
7
9
9.1
8.5
12
13
mΩ
VGS = 0 V
VDS = 0 V
(Note 2)
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
1
VGS = 10 V,
ID = 11 A
VGS = 4.5V,
ID = 10 A
VGS = 10 V, ID = 11 A, TJ=125°C
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
gFS
Reverse Transfer Capacitance
Forward Transconductance
VDS = 5 V,
RG
Gate Resistance
Switching Characteristics
VDS = 15 V,
f = 1.0 MHz
1520
V GS = 0 V,
pF
420
pF
ID = 11 A
130
46
pF
S
VGS = 15 mV,
f = 1.0 MHz
1.1
Ω
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
10
20
4
8
ns
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
27
43
ns
tf
Turn–Off Fall Time
13
23
ns
Qg(TOT)
Total Gate Charge at Vgs=10V
22
31
nC
Qg
Total Gate Charge at Vgs=5V
12
17
nC
Qgs
Gate–Source Charge
4.5
nC
Qgd
Gate–Drain Charge
3.1
nC
VDD = 15 V,
ID = 11 A,
ns
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 1.7 A
Voltage
Diode Reverse Recovery Time
IF = 11A
diF/dt = 100 A/µs
Diode Reverse Recovery Charge
1.7
1.2
A
V
(Note 2)
0.7
28
nS
(Note 2)
18
nC
Notes:
1.
RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a)
60°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
108°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ7296 Rev B(W)
FDZ7296
Electrical Characteristics
FDZ27296
Dimensional Outline and Pad Layout
FDZ7296 Rev B(W)
FDZ7296
Typical Characteristics
4
20
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6.0V
ID, DRAIN CURRENT (A)
VGS = 3.0V
3.5V
VGS = 10.0V
4.0V
15
4.5V
3.0V
10
5
2.5V
0.5
1
VDS, DRAIN-SOURCE VOLTAGE (V)
3.5V
4.0V
4.5V
6.0V
1
0
1.5
Figure 1. On-Region Characteristics.
10.0V
5
10
ID, DRAIN CURRENT (A)
15
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
1.6
ID = 11A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
0
0
0
3
1.4
1.2
1
0.8
0.6
ID =5.5 A
0.02
0.015
o
TA = 125 C
0.01
TA = 25oC
0.005
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
150
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
ID, DRAIN CURRENT (A)
VDS = 5V
15
o
TA = 125 C
10
o
25 C
o
-55 C
5
10
TA = 125oC
1
25oC
0.1
0.01
-55oC
0.001
0.0001
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ7296 Rev B(W)
FDZ7296
Typical Characteristics
2000
f = 1MHz
VGS = 0 V
ID = 11A
1600
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
Ciss
1200
800
Coss
2
400
0
0
Crss
0
5
10
15
Qg, GATE CHARGE (nC)
20
0
25
Figure 7. Gate Charge Characteristics.
50
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
1ms
ID, DRAIN CURRENT (A)
20
Figure 8. Capacitance Characteristics.
100
10ms
10
100ms
1s
1
10s
DC
VGS = 10V
SINGLE PULSE
o
RθJA = 108 C/W
0.1
o
TA = 25 C
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
30
20
10
0
0.01
100
SINGLE PULSE
RθJA = 108°C/W
TA = 25°C
40
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
5
10
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 108 °C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ7296 Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
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I2C™
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i-Lo™
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ImpliedDisconnect™
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Across the board. Around the world.™ OPTOPLANAR™
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The Power Franchise
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QFET
QS™
QT Optoelectronics™
Quiet Series™
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SILENT SWITCHER
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I14