FDZ204P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space This BGA MOSFET embodies a and RDS(ON). breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). • –4.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V RDS(ON) = 75 mΩ @ VGS = –2.5 V • Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB Applications • Ultra-low Qg x RDS(ON) figure-of-merit. • Battery management • High power and current handling capability. • Load switch • Battery protection D D S S S G S S P in 1 F204P D Bottom VDSS VGSS ID PD TJ, TSTG G Top Absolute Maximum Ratings Symbol S D TA=25oC unless otherwise noted Parameter Ratings Units Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range –20 ±12 –4.5 –20 1.8 –55 to +150 V V A W °C 67 11 1 °C/W °C/W °C/W Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) Package Marking and Ordering Information Device Marking 204P 2004 Fairchild Semiconductor Corporation Device FDZ204P Reel Size 7’’ Tape width 8mm Quantity 3000 units FDZ204P Rev. D4 (W) FDZ204P January 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C –20 Typ Max Units –17 V mV/°C Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse On Characteristics –1 –100 100 µA nA nA –0.9 3 –1.5 V mV/°C VGS = –4.5 V, ID = –4.5 A ID = –3.5 A VGS = –2.5 V, VGS = –4.5 V, ID = –4.5A,TJ=125°C VDS = –5 V, ID = –4.5 A 37 57 50 15 45 75 65 mΩ VDS = –10 V, f = 1.0 MHz V GS = 0 V, 884 258 103 VDD = –6 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω VDS = –10 V, VGS = –4.5 V ID = –4.5 A, 12 9 36 24 9 2 3 VDS = –16 V, VGS = –12 V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V (Note 2) VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance –0.6 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd pF pF pF (Note 2) Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 22 18 58 38 13 ns ns ns ns nC nC nC –1.5 –1.2 A V Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –1.5 A Voltage Diode Reverse Recovery Time IF = –5.5 A, Diode Reverse Recovery Charge diF/dt = 100 A/µs –0.76 (Note 2) 25 26 nS nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 67 °C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 155 °C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ204P Rev. D4 (W) FDZ204P Electrical Characteristics FDZ204P Dimensional Outline and Pad Layout FDZ204P Rev. D4 (W) FDZ204P Typical Characteristics 2 VGS = -4.5V -3.0V -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 -2.5V 15 10 -2.0V 5 1.8 VGS = -2.5V 1.6 1.4 -3.0V 1.2 -3.5V -4.0V 0.8 0 0 1 2 3 0 4 5 10 Figure 1. On-Region Characteristics. 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 1.6 ID = -4.5A VGS = -4.5V RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.6 ID = -2.3 A 0.14 0.1 o TA = 125 C 0.06 o TA = 25 C 0.02 -50 -25 0 25 50 75 100 125 150 1.5 2 o 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 15 25oC -IS, REVERSE DRAIN CURRENT (A) TA = -55oC VDS = -5V -ID, DRAIN CURRENT (A) -4.5V 1 125oC 10 5 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ204P Rev. D4 (W) FDZ204P Typical Characteristics 1600 ID = -4.5A VDS = -5V f = 1MHz VGS = 0 V -10V 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 1200 1 CISS 800 COSS 400 CRSS 0 0 0 2 4 6 8 10 12 0 Figure 7. Gate Charge Characteristics. 10 15 20 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 1ms 10ms 10 100ms 1s 1 DC VGS = -4.5V SINGLE PULSE RθJA = 155oC/W 0.1 TA = 25oC 0.01 0.1 1 10 30 20 10 0 0.01 100 SINGLE PULSE RθJA = 155°C/W TA = 25°C 40 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R JA(t) = r(t) * R JA R JA = 155 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ204P Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7