ETC FSGYE035R3

FSGYE035R
Data Sheet
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
itle
Fairchild Star*Power™ Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Fairchild FS families have always featured.
July 2001
File Number 5006
Features
• 20A*, 60V, rDS(ON) = 0.030Ω
• UIS Rated
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The Fairchild family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
rDS(ON) while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 1.2nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Symbol
D
G
S
Packaging
SMD.5
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
*Current is limited by the package capability
Formerly available as type TA45224W.
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering samples
FSGYE035D1
100K
TXV
FSGYE035R3
100K
Space
FSGYE035R4
©2001 Fairchild Semiconductor Corporation
4-1
FSGYE035R Rev. A1
FSGYE035R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSGYE035R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
60
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
60
V
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
20 (Note)
A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
20 (Note)
A
Continuous Drain Current
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
80
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±30
V
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
42
W
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
17
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.33
W/ oC
Maximum Power Dissipation
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . IAS
57
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
20
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
80
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
1.0 (Typical)
g
Weight (Typical)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
*Current is limited by the package capability
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(TH)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
IDSS
IGSS
VDS(ON)
rDS(ON)12
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
TEST CONDITIONS
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
VDS = 48V,
VGS = 0V
VGS = ±30V
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = 12V, ID = 20A
ID = 20A,
VGS = 12V
Total Gate Charge
Qg(12)
VGS = 0V to 12V
MAX
UNITS
-
-
V
-
-
5.5
V
2.0
-
4.5
V
1.0
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
0.600
V
-
0.025
0.030
Ω
TC = 125oC
-
-
0.051
Ω
-
-
20
ns
-
-
55
ns
-
-
30
ns
-
-
15
ns
-
24
28
nC
-
10
12
nC
VDD = 30V, ID = 20A,
RL = 1.5Ω, VGS = 12V,
RGS = 7.5Ω
Qgs
TYP
60
TC = 25oC
tf
Gate Charge Source
MIN
30V < VDD < 48V,
ID = 20A
Gate Charge Drain
Qgd
-
5
7
nC
Gate Charge at 20V
Qg(20)
VGS = 0V to 20V
-
56
-
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
3
-
nC
Plateau Voltage
V(PLATEAU)
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
©2001 Fairchild Semiconductor Corporation
4-2
RθJC
ID = 20A, VDS = 15V
-
6
-
V
VDS = 25V, VGS = 0V,
f = 1MHz
-
1550
-
pF
-
540
-
pF
-
13
-
pF
1.67
oC/W
-
-
FSGYE035R Rev. A1
FSGYE035R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
MIN
TYP
MAX
ISD = 20A
TEST CONDITIONS
-
-
1.2
V
ISD = 20A, dISD/dt = 100A/µs
-
-
110
ns
-
0.31
-
µC
QRR
UNITS
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
MIN
MAX
VGS = 0, ID = 1mA
60
-
V
VGS(TH)
VGS = VDS, ID = 1mA
2.0
4.5
V
(Notes 2, 3)
IGSS
VGS = ±30V, VDS = 0V
-
100
nA
(Note 3)
IDSS
VGS = 0, VDS = 48V
-
25
µA
Drain to Source Breakdown Volts
(Note 3)
BVDSS
Gate to Source Threshold Volts
(Note 3)
Gate to Body Leakage
Zero Gate Leakage
TEST CONDITIONS
UNITS
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 20A
-
0.600
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 20A
-
0.030
Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST
Single Event Effects Safe Operating Area
TYPICAL RANGE
(µ)
APPLIED
VGS BIAS
(V)
(Note 7)
MAXIMUM
VDS BIAS
(V)
37
36
-5
60
60
32
-2
60
60
32
-4
30
82
28
0
48
82
28
-2
30
SYMBOL
(Note 6)
TYPICAL LET
(MeV/mg/cm)
SEESOA
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm 2 , RANGE = 36µ
LET = 60MeV/mg/cm 2 , RANGE = 32µ
LET = 82MeV/mg/cm 2 , RANGE = 28µ
70
70
60
FLUENCE = 1E5 IONS/cm 2 (TYPICAL)
60
LET = 37
50
V DS
V D S (V)
50
40
40
30
30
L ET = 82
20
20
10
10
LET = 60
0
0
0
-1
-3
V G S (V)
-2
-4
-5
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
4-3
0
5
10
15
20
25
30
35
40
-6
NEG ATIVE V G S BIAS (V)
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
FSGYE035R Rev. A1
FSGYE035R
Performance Curves
Unless Otherwise Specified
(Continued)
24
LIMITING INDUCTANCE (HENRY)
1E-3
20
1E-4
ILM = 10A
16
I D , DRAIN (A)
30A
1E-5
100A
12
8
300A
1E-6
4
1E-7
30
10
100
0
-50
1000
300
0
100
150
T C , CA SE TEMPER ATU RE ( o C)
DRAIN SUPPLY (V)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I AS
200
50
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
TC = 2 5oC
I D , DRAIN CURRENT (A)
100
12V
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
QG
1
QGS
VG
10ms
10
100
QGD
200
CHARGE
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
I D , DRAIN-TO-SO URCE CURRENT (A)
2.5
NO R M A LIZED r D S(O N )
PULSE DURATION = 250ms, V GS = 12V, ID = 20A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
©2001 Fairchild Semiconductor Corporation
4-4
100
V GS = 14 V
V GS = 12 V
V GS = 10 V
V G S = 8V
80
60
40
VGS = 6V
20
0
0
2
4
6
8
10
V D S , D R A IN -TO -S O U R C E V O LTA G E (V )
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
FSGYE035R Rev. A1
FSGYE035R
NORMALIZED THERMAL RESPONSE (ZθJC)
Performance Curves
Unless Otherwise Specified
(Continued)
10
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
t1
t2
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
I AS , AVA LA N C H E C U R R EN T (A )
200
100
STAR TIN G T J = 25 o C
10
STAR TIN G T J = 150 o C
IF R = 0
t AV = (L) (I A S ) / (1.3 RATED BV D SS - V D D )
IF R ≠ 0
t AV = (L/R) ln [(I A S *R ) / (1.3 RATED B V DSS - V DD ) + 1]
1
.01
.1
1
10
t AV , TIME IN AVALAN CH E (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
BVDSS
+
CURRENT I
TRANSFORMER AS
tP
-
VARY tP TO OBTAIN
REQUIRED PEAK I AS
VDD
DUT
tP
VDD
+
50Ω
VGS ≤ 20V
0V
VDS
I AS
50V-150V
50Ω
tAV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
4-5
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
FSGYE035R Rev. A1
FSGYE035R
Test Circuits and Waveforms
tON
VDD
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
VDS
VGS = 12V
10%
DUT
10%
0V
90%
R GS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
MAX
UNITS
Gate to Source Leakage Current
PARAMETER
SYMBOL
IGSS
VGS = ±30V
TEST CONDITIONS
±20 (Note 8)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
±25 (Note 8)
µA
Drain to Source On Resistance
rDS(ON)
TC = 25oC at Rated ID
±20% (Note 9)
Ω
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±20% (Note 9)
V
NOTES:
8. Or 100% of Initial Reading (whichever is greater).
9. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
Unclamped Inductive Switching
V GS(PEAK) = 20V, L = 0.1mH; Limit = 57A
JANS EQUIVALENT
VGS(PEAK) = 20V, L = 0.1mH; Limit = 57A
Thermal Response
tH = 10ms; VH = 25V; IH = 1A; LIMIT = 74mV
tH = 10ms; VH = 25V; IH = 1A; LIMIT = 74mV
Gate Stress
V GS = 45V, t = 250µs
VGS = 45V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 10)
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-PRF-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
MIL-PRF-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 10)
All Delta Parameters Listed in the Delta Tests and
Limits Table
All Delta Parameters Listed in the Delta Tests and
Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-PRF-750, Method 1042, Condition A
V DS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
MIL-PRF-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 10
MIL-PRF-19500, Group A, Subgroup 2
MIL-PRF-19500, Group A,
Subgroups 2 and 3
NOTE:
10. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
VDS = 48V, t = 10ms
3.5
A
Thermal Impedance
∆VSD
tH = 100ms; VH = 25V; IH = 1A
165
mV
©2001 Fairchild Semiconductor Corporation
4-6
FSGYE035R Rev. A1
FSGYE035R
Rad Hard Data Packages - Fairchild Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
D. SEM Photos and Report
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
F. Group A
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
©2001 Fairchild Semiconductor Corporation
4-7
- Attributes Data Sheet
- Attributes Data Sheet
- Pre and Post Radiation Data
FSGYE035R Rev. A1
FSGYE035R
SMD.5
3 PAD CERAMIC LEADLESS CHIP CARRIER
INCHES
E
D
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.108
0.118
2.74
2.99
-
b
0.090
0.100
2.28
2.54
-
D
0.291
0.301
7.39
7.64
-
D1
0.281
0.291
7.13
7.39
-
D2
0.070
0.080
1.78
2.03
-
E
0.395
0.405
10.03
10.28
-
E1
0.220
0.230
5.58
5.84
-
E2
0.120
0.130
3.04
3.30
-
NOTES:
1. No current JEDEC outline for this package.
A
2. Controlling dimension: Inch.
3. Revision 2 dated 11-99.
E1
E2
2
D2
3
D1
1
b
1 - GATE
2 - SOURCE
3 - DRAIN
©2001 Fairchild Semiconductor Corporation
4-8
FSGYE035R Rev. A1
FSGYE035R
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
Ensigna™
FACT™
FACT Quiet Series™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench ®
QFET™
QS™
QT Optpelectronics™
Quiet Series™
SILENTSWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
4-9
FSGYE035R Rev. A1