INTERSIL FSJ163D

FSJ163D, FSJ163R
Data Sheet
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Ordering Information
RAD LEVEL
SCREENING LEVEL
June 1999
File Number
Features
• 60A, 130V, rDS(ON) = 0.030Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 12.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
G
S
Package
TO-254AA
PART NO./BRAND
G
10K
Commercial
FSJ163D1
10K
TXV
FSJ163D3
100K
Commercial
FSJ163R1
100K
TXV
FSJ163R3
100K
Space
FSJ163R4
Formerly available as type TA45203.
4-1
4751
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
FSJ163D, FSJ163R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT
Derated Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
FSJ163D, FSJ163R
130
130
UNITS
V
V
60
38
180
±20
A
A
A
V
192
77
1.54
180
60
180
-55 to 150
300
W
W
W/ oC
A
A
A
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
On Resistance
IDSS
IGSS
VDS(ON)
rDS(ON)12
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
Fall Time
Total Gate Charge
VDS = 104V,
VGS = 0V
VGS = ±20V
TYP
MAX
UNITS
130
-
-
V
TC = -55oC
-
-
5.0
V
TC = 25oC
1.5
-
4.0
V
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
0.5
-
-
V
VGS = 12V, ID = 60A
ID = 38A,
VGS = 12V
MIN
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
1.89
V
TC = 25oC
-
0.022
0.030
Ω
TC = 125oC
-
-
0.052
Ω
-
-
40
ns
VDD = 65V, ID = 60A,
RL = 1.08Ω, VGS = 12V,
RGS = 2.35Ω
-
-
170
ns
td(OFF)
-
-
90
ns
tf
-
-
45
ns
-
-
310
nC
-
170
200
nC
-
-
7.4
nC
Qg(TOT)
VGS = 0V to 20V
Gate Charge at 12V
Qg(12)
VGS = 0V to 12V
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
VDD = 65V,
ID = 60A
Gate Charge Source
Qgs
-
30
35
nC
Gate Charge Drain
Qgd
-
99
120
nC
Plateau Voltage
V(PLATEAU)
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
4-2
RθJC
ID = 60A, VDS = 15V
-
8
-
V
VDS = 25V, VGS = 0V,
f = 1MHz
-
4300
-
pF
-
130
-
pF
-
500
-
pF
0.65
oC/W
-
-
FSJ163D, FSJ163R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Forward Voltage
VSD
Reverse Recovery Time
TEST CONDITIONS
MIN
TYP
MAX
UNITS
0.6
-
1.8
V
-
-
550
ns
ISD = 60A
trr
ISD = 60A, dISD/dt = 100A/µs
Electrical Specifications up to 100K RAD
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
130
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
1.5
4.0
V
Gate-Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Zero-Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 104V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 60A
-
1.89
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 38A
-
0.030
Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS (V)
-20
130
TEST
SYMBOL
ION
SPECIES
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
Br
37
36
-5
130
Br
37
36
-10
104
Br
37
36
-15
78
Br
37
36
-20
52
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves
Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
1E-3
LIMITING INDUCTANCE (HENRY)
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
140
120
VDS (V)
100
80
60
40
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
20
TEMP = 25oC
1E-7
0
0
-5
-10
-15
VGS (V)
-20
-25
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
4-3
10
30
100
300
DRAIN SUPPLY (V)
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
1000
FSJ163D, FSJ163R
Typical Performance Curves
Unless Otherwise Specified (Continued)
500
80
ID , DRAIN CURRENT (A)
TC = 25oC
ID , DRAIN (A)
60
40
20
100
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
1
0
-50
0
50
1
150
100
10
TC , CASE TEMPERATURE (oC)
100
500
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, VGS = 12V, ID = 38A
NORMALIZED rDS(ON)
2.0
QG
12V
QGS
QGD
VG
1.5
1.0
0.5
CHARGE
0.0
-80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
THERMAL RESPONSE (ZθJC)
NORMALIZED
10
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4-4
t1
t2
100
101
FSJ163D, FSJ163R
Typical Performance Curves
Unless Otherwise Specified (Continued)
IAS , AVALANCHE CURRENT (A)
1000
STARTING TJ = 25oC
100
STARTING TJ = 150oC
10
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
1
0.01
0.1
10
1
tAV, TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
BVDSS
+
CURRENT I
TRANSFORMER AS
tP
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VDD
50V-150V
DUT
tP
VDD
+
50Ω
VGS ≤ 20V
0V
VDS
IAS
50Ω
tAV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
tON
VDD
tOFF
tD(ON)
tD(OFF)
tR
RL
VDS
tF
90%
90%
VDS
VGS = 12V
10%
DUT
10%
0V
90%
RGS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
4-5
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
FSJ163D, FSJ163R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±20V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
On Resistance
rDS(ON)
TC = 25oC at Rated ID
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±25 (Note 7)
µA
±20% (Note 8)
Ω
±20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
VGS = 30V, t = 250µs
VGS = 30V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
Safe Operating Area
SOA
Unclamped Inductive Switching
IAS
TEST CONDITIONS
MAX
UNITS
VDS = 104V, t = 10ms
4.5
A
VGS(PEAK) = 15V, L = 0.1mH
180
A
Thermal Response
∆VSD
tH = 100ms; VH = 25V; IH = 4A
90
mV
Thermal Impedance
∆VSD
tH = 500ms; VH = 25V; IH = 4A
160
mV
4-6
FSJ163D, FSJ163R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
D. Group A
- Attributes Data Sheet
F. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
G. Group D
2. Rad Hard TXV Equivalent - Optional Data Package
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
G. Group D
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
4-7
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
FSJ163D, FSJ163R
TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
INCHES
A
ØP
E
SYMBOL
A1
Q
H1
D
1
2
3
e
J1
e1
MAX
NOTES
0.249
0.260
6.33
6.60
-
0.040
0.050
1.02
1.27
-
Øb
0.035
0.045
0.89
1.14
2, 3
D
0.790
0.800
20.07
20.32
-
E
0.535
0.545
13.59
13.84
e1
Øb
MIN
A
H1
L
MILLIMETERS
MAX
A1
e
0.065 R MAX.
TYP.
MIN
0.150 TYP
0.300 BSC
0.245
0.265
-
3.81 TYP
4
7.62 BSC
4
6.23
6.73
-
J1
0.140
0.160
3.56
4.06
4
L
0.520
0.560
13.21
14.22
-
ØP
0.139
0.149
3.54
3.78
-
Q
0.110
0.130
2.80
3.30
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC outline TO-254AA dated 11-86.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation
which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be
subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
4-8
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029