GMF05MC Vishay Semiconductors Low Capacitance ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 (ESD) 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 7 A (tp = 8/20 µs) • Small package for use in portable electronics • Bidirectional protection of 4 I/O lines • Unidirectional protection of 5 I/O lines • Low leakage current • Ideal for cellular handsets, cordless phones, notebooks, handhelds and digital cameras G M 3 1 18538-4 VY - V = Vishay Y = year, is variable for digit from 0 to 9 (e.g. 4 = 2004, 5 = 2005) CW = Calendar Week, is variable for number from 01 to 52 GM3 = code for GMF05MC Mechanical Data Case: SOT-363 Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: approx. 6.0 mg Parts Table Part GMF05MC Ordering code GMF05MC-GS08 Marking Remarks GM3 Tape and Reel Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Symbol Value Unit Peak pulse power Parameter 8/20 µs waveform Test condition Pppm 100 W Peak pulse current 8/20 µs waveform Ipp 7 A Symbol Value Unit Tj - 55 to + 125 °C TSTG - 55 to + 150 °C Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Operating temperature Storage temperature Document Number 85855 Rev. 1.1, 02-Mar-05 Test condition www.vishay.com 1 GMF05MC VISHAY Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Test condition Reverse stand-off voltage Symbol Min Typ. VRWM It = 1 mA Reverse breakdown voltage VBR Max Unit 5 V 6 V Reverse leakage current VRWM = 5 V IR 0.2 µA Clamping voltage IPP = 1 A, 8/20 µs waveform VC 9 V IPP = 7 A, 8/20 µs waveform VC IF = 1 A, 8/20 µs waveform VF Peak forward voltage Junction capacitance between I/ VR = 0 V, f = 1 MHz O pins and Gnd 12 V 1.5 V Cj 75 pF 100 - Peak Pulse Power ( kW ) 100 75 0.01 0.1 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (° C) Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 70 60 50 40 I t d = PP 2 30 20 10 0 10 100 1000 Figure 3. Non -Repetitive Peak Pulse Power vs. Pulse Time 110 100 90 80 1 td - Pulse Duration ( µ A ) 18668 Figure 1. Pulse Derating Curve IPPM - Peak Pulse Current, % IRSM 0.1 P 25 18687 100 90 f = 1 MHz 80 70 60 50 40 30 20 10 0 0 18688 5 10 15 20 25 t - Time ( µs) Figure 2. Pulse Waveform www.vishay.com 2 1 PPM 50 10 CD - Diode Capacitance ( pF ) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % Typical Characteristics (Tamb = 25 °C unless otherwise specified) 30 0 18669 1 2 3 4 5 6 VR - Reverse Voltage ( V ) Figure 4. Typical Capacitance vs. Reverse Voltage Document Number 85855 Rev. 1.1, 02-Mar-05 GMF05MC VISHAY Vishay Semiconductors 14 VC - Typical Clamping Voltage ( V ) 7 V R - Reverse Voltage ( V ) 6 5 4 3 2 1 0 0.01 18670 12 10 8 6 4 2 0 0.1 1 10 100 1000 0 IR - Reverse Current ( µA ) Figure 5. Typical Reverse Voltage vs. Reverse Current 1 2 3 4 5 6 7 8 9 10 I PP - Peak Pulse Current ( A ) 18671 Figure 6. Typical Clamping Voltage vs. Peak Pulse Current Package Dimensions in mm (Inches) 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0.25 (0.010) 0.10 (0.004) ISO Method E 10 Mounting Pad Layout 2.20 (0.087) 1.80 (0.071) 0.30 (0.012) 0.20 (0.009) 0.90 (0.035) 1.60 (0.063) 2.20 (0.087) 2.00 (0.079) 1.15 (0.045) 1.35 (0.053) 0.35 (0.014) 0.65 (0.026) Ref. 0.65 (0.026) 1.3 (0.052) Document Number 85855 Rev. 1.1, 02-Mar-05 1.30 (0.052) Ref. 14280 www.vishay.com 3 GMF05MC VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85855 Rev. 1.1, 02-Mar-05