Pb Free Plating Product ISSUED DATE :2006/04/06 REVISED DATE : GSS9922E BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 20m 6.8A Description The GSS9922E provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Ratings Unit VDS 20 V VGS ±12 V 3 ID @Ta=25 6.8 A 3 ID @Ta=70 5.4 A 25 A 2 W Continuous Drain Current , [email protected] Continuous Drain Current , [email protected] Pulsed Drain Current Symbol 1 IDM Total Power Dissipation PD @Ta=25 Linear Derating Factor 0.016 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 62.5 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSS9922E 3 Max. Unit /W Page: 1/4 ISSUED DATE :2006/04/06 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.05 - Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=1mA gfs - 22 - S VDS=4.5V, ID=6A IGSS - - ±10 uA VGS= ±12V - - 10 uA VDS=20V, VGS=0 - - 100 uA VDS=16V, VGS=0 - - 20 - - 25 Qg - 25 40 Gate-Source Charge Qgs - 3 - Gate-Drain (“Miller”) Change Qgd - 9 - Td(on) - 11 - Tr - 12 - Td(off) - 47 - Tf - 23 - Input Capacitance Ciss - 1730 2770 Output Capacitance Coss - 280 - Reverse Transfer Capacitance Crss - 240 - Rg - 2.2 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=0.84A, VGS=0V Reverse Recovery Time2 Trr - 24 - ns Reverse Recovery Charge Qrr - 18 - nC IS=6A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=4.5V, ID=6A VGS=2.5V, ID=4A nC ID=6A VDS=16V VGS=4.5V ns VDS=15V ID=1A VGS=4.5V RG=3.3 RD=15 pF VGS=0V VDS=20V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad. GSS9922E Page: 2/4 ISSUED DATE :2006/04/06 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GSS9922E Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2006/04/06 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 135 Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform /W Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS9922E Page: 4/4