GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.05 μs (typ.) • Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) • Low saturation Voltage: VCE (sat) = 2.0 V (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 50 1 ms ICP 100 Collector power dissipation (Tc = 25°C) PC 240 W TOSHIBA Junction temperature Tj 150 °C Weight: 9.75 g Tstg −55 to 150 °C Collector current Storage temperature range A JEDEC ― JEITA ― 2-21F2C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance Symbol Max Unit Rth (j-c) 0.521 °C/W Marking Part No. (or abbreviation code) TOSHIBA GT50J121 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT50J121 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (OFF) IC = 5 mA, VCE = 5 V 3.5 ⎯ 6.5 V VCE (sat) IC = 50 A, VGE = 15 V ⎯ 2.0 2.45 V VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 7900 ⎯ pF td (on) ⎯ 0.09 ⎯ tr ⎯ 0.07 ⎯ Inductive load ⎯ 0.24 ⎯ VCC = 300 V, IC = 50 A ⎯ 0.30 ⎯ ⎯ 0.05 ⎯ ⎯ 0.43 ⎯ Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Turn-on delay time Rise time Switching time Turn-on time ton Turn-off delay time td (off) Fall time Switching loss tf VGG = +15 V, RG = 13 Ω (Note 1) Turn-off time toff Turn-on switching loss Eon ⎯ 1.30 ⎯ Turn-off switching loss Eoff ⎯ 1.34 ⎯ (Note 2) μs mJ Note 1: Switching time measurement circuit and input/output waveforms VGE GT50J325 90% 10% 0 −VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% 10% 10% 10% td (on) td (off) tf toff tr ton Note 2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 VCE 5% Eoff Eon 2 2006-11-01 GT50J121 IC – VCE VCE – VGE 20 20 80 15 VCE (V) Common emitter Tc = 25°C 10 Collector-emitter voltage Collector current IC (A) 100 60 40 8 20 VGE = 7 V 0 0 1 2 3 Collector-emitter voltage Common emitter Tc = −40°C 16 12 8 100 30 IC = 10 A 4 0 0 5 VCE (V) 4 8 VCE (V) Collector-emitter voltage VCE (V) Collector-emitter voltage 12 100 50 4 4 16 12 100 8 30 4 8 12 16 0 0 20 VGE (V) 4 8 IC – VGE Collector-emitter saturation voltage VCE (sat) (V) (A) Collector current IC 16 20 VGE (V) VCE (sat) – Tc 5 80 60 40 Tc = 125°C 12 Gate-emitter voltage Common emitter VCE = 5 V 20 50 IC = 10 A Gate-emitter voltage 100 VGE (V) Common emitter Tc = 125°C IC = 10 A 0 0 20 VCE – VGE 16 30 16 20 Common emitter Tc = 25°C 8 12 Gate-emitter voltage VCE – VGE 20 50 4 −40 Common emitter VGE = 15 V 4 100 70 3 50 30 2 IC = 10 A 1 25 0 0 4 8 12 Gate-emitter voltage 16 0 −60 20 VGE (V) −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT50J121 Switching time ton, tr, td (on) – RG Switching time 10 (μs) Common emitter VCC = 300 V VGG = 15 V 3 IC = 50 A : Tc = 25°C : Tc = 125°C (Note 1) 1 Switching time ton, tr, td (on) Switching time ton, tr, td (on) (μs) 10 ton 0.3 0.1 td (on) tr 0.03 0.01 1 3 10 30 100 Gate resistance Switching time RG 300 (μs) (μs) Switching time toff, tf, td (off) Switching time toff, tf, td (off) 10 30 100 Gate resistance Switching loss RG 300 0.3 50 (A) td (off) 0.1 tf 0.03 10 Eon, Eoff – RG Eon, Eoff (mJ) Eoff 0.3 30 Gate resistance 100 RG 20 Switching loss 10 Switching loss Eon, Eoff (mJ) Switching loss 40 toff, tf, td (off) – IC 30 Collector current IC Eon 10 30 toff (Ω) Common emitter VCC = 300 V VGG = 15 V IC = 50 A 10 : Tc = 25°C : Tc = 125°C (Note 2) 3 20 Common emitter VCC = 300 V VGG = 15 V 3 RG = 13 Ω : Tc = 25°C : Tc = 125°C (Note 1) 1 0.01 0 1000 30 0.1 1 10 Switching time tf 1 tr 0.03 10 0.1 3 td (on) toff, tf, td (off) – RG toff 3 ton 0.1 Collector current IC td (off) 0.01 1 0.3 (Ω) Common emitter VCC = 300 V VGG = 15 V 3 IC = 50 A : Tc = 25°C : Tc = 125°C (Note 1) 1 0.03 1 0.01 0 1000 10 0.3 3 ton, tr, td (on) – IC Common emitter VCC = 300 V VGG = 15 V RG = 13 Ω : Tc = 25°C : Tc = 125°C (Note 1) 300 3 (Ω) (A) Eon, Eoff – IC Common emitter VCC = 300 V VGG = 15 V RG = 13 Ω : Tc = 25°C : Tc = 125°C (Note 2) 1 Eoff 0.3 10 20 30 Collector current IC 4 50 Eon 0.1 0 1000 40 40 50 (A) 2006-11-01 GT50J121 VCE, VGE – QG Capacitance C 1000 VCE (V) (pF) 3000 Collector-emitter voltage Cies 10000 300 Coes 100 30 10 0.1 Cres Common emitter VGE = 0 f = 1 MHz Tc = 25°C 0.3 1 3 10 30 Collector-emitter voltage 100 300 400 16 300 12 300 200 8 200 VCE = 100 V 100 0 0 1000 100 VCE (V) Safe operating area IC max (pulse)* (A) (A) DC operation 10 Collector current IC Collector current IC 30 100 μs* 1 ms* 3 *: Single pulse 10 ms* Tc = 25°C 1 Curves must be derated linearly with increase in temperature. 0.3 0.1 1 3 10 30 10 10 10 300 100 Collector-emitter voltage Transient thermal resistance rth (t) (°C/W) 100 50 μs* IC max (continuous) 10 10 0 400 300 Reverse bias SOA 30 10 200 300 100 10 4 Gate charge QG (nC) 300 10 20 Common emitter RL = 6 Ω Tc = 25°C VGE (V) 500 Gate-emitter voltage C – VCE 30000 3 1 0.3 0.1 1 1000 VCE (V) < 125°C Tj = VGE = 15 V RG = 13 Ω 3 10 30 Collector-emitter voltage 100 300 1000 VCE (V) rth (t) – tw 2 Tc = 25°C 1 0 −1 −2 −3 −4 10 −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 5 2006-11-01 GT50J121 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01