TOSHIBA GT15J321

GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321
High Power Switching Applications
Fast Switching Applications
•
The 4th generation
•
FS (fast switching)
•
Enhancement-mode
•
High speed: tf = 0.03 µs (typ.)
•
Low saturation Voltage: VCE (sat) = 1.90 V (typ.)
•
FRD included between emitter and collector.
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
15
1 ms
ICP
30
DC
IF
15
1 ms
IFM
30
Collector power dissipation
(Tc = 25°C)
PC
30
W
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Collector current
Emitter-collector forward
current
Storage temperature range
A
A
JEDEC
―
JEITA
―
TOSHIBA
2-10R1C
Weight: 1.7 g
Equivalent Circuit
Collector
Gate
Emitter
1
2002-01-18
GT15J321
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20 V, VCE = 0


±500
nA
Collector cut-off current
ICES
VCE = 600 V, VGE = 0


1.0
mA
VGE (OFF)
IC = 1.5 mA, VCE = 5 V
3.5

6.5
V
VCE (sat)
IC = 15 A, VGE = 15 V

1.90
2.45
V
VCE = 20 V, VGE = 0, f = 1 MHz

2300

pF
Inductive Load

0.04

ton
VCC = 300 V, IC = 15 A

0.17

tf
VGG = 15 V, RG = 43 Ω

0.03
0.15

0.34

Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Cies
Rise time
Switching time
tr
Turn-on time
Fall time
Turn-off time
(Note 1)
toff
µs
Peak forward voltage
VF
IF = 15 A, VGE = 0


2.0
V
Reverse recovery time
trr
IF = 15 A, di/dt = −100 A/µs


200
ns
Thermal resistance (IGBT)
Rth (j-c)



4.16
°C/W
Thermal resistance (Diode)
Rth (j-c)



4.63
°C/W
Note 1: Switching time measurement circuit and input/output waveforms
VGE
90%
10%
0
−VGE
IC
L
IC
VCC
90%
90%
RG
VCE
0
VCE
10%
10%
10%
td (on)
td (off)
10%
tr
tf
toff
ton
Note 2: Switching loss measurement waveforms
VGE
90%
10%
0
IC
0
5%
VCE
Eoff
Eon
2
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GT15J321
IC – VCE
VCE – VGE
50
20
Common emitter
20
Collector current
30
Collector-emitter voltage VCE
IC
(A)
40
15
9
20
8
10
VGE = 7 V
0
0
1
Tc = −40°C
(V)
Common emitter
Tc = 25°C
2
3
4
Collector-emitter voltage VCE
16
15
8
4
0
0
5
30
12
(V)
IC = 6 A
4
8
12
Gate-emitter voltage
16
VGE
20
Common emitter
Collector-emitter voltage VCE
16
30
12
15
8
4
IC = 6 A
4
8
12
Gate-emitter voltage
16
VGE
Tc = 125°C
(V)
(V)
Collector-emitter voltage VCE
Common emitter
Tc = 25°C
16
30
12
15
8
4
0
0
20
IC = 6 A
4
8
IC – VGE
20
(V)
VCE (sat) – Tc
Common emitter
VCE = 5 V
Collector-emitter saturation voltage
VCE (sat) (V)
Common emitter
(A)
IC
16
VGE
4
25
Collector current
12
Gate-emitter voltage
(V)
30
20
15
10
5
(V)
VCE – VGE
VCE – VGE
20
0
0
20
Tc = 125°C
−40
VGE = 15 V
30 A
3
15 A
2
IC = 6 A
1
25
0
0
4
8
12
Gate-emitter voltage
16
VGE
0
−60
20
(V)
−20
20
60
Case temperature Tc
3
100
140
(°C)
2002-01-18
GT15J321
Switching time ton, tr – RG
0.5
(µs)
Common emitter
VCC = 300 V
VGG = 15 V
IC = 15 A
: Tc = 25°C
: Tc = 125°C
ton, tr
1
Switching time ton, tr – IC
3
0.3
ton
Switching time
Switching time
ton, tr
(µs)
3
0.1
0.05
tr
0.03
Common emitter
VCC = 300 V
VGG = 15 V
RG = 43 Ω
: Tc = 25°C
: Tc = 125°C
1
0.5
0.3
ton
0.1
0.05
0.03
tr
0.01
1
3
10
30
100
Gate resistance RG
300
0.01
1000
0
3
(Ω)
(µs)
0.3
toff
0.1
0.05
0.03
0.01
1
tf
3
10
30
100
Gate resistance RG
Switching loss
300
toff
0.5
0.3
tf
0.1
Common emitter
VCC = 300 V
VGG = 15 V
RG = 43 Ω
: Tc = 25°C
: Tc = 125°C
0.05
0.03
0
(Ω)
6
Switching loss
Eon, Eoff – RG
10
Common emitter
VCC = 300 V
VGG = 15 V
IC = 15 A
: Tc = 25°C
: Tc = 125°C
(Note 2)
9
(mJ)
3
Eon, Eoff
1
0.3
Eoff
0.1
12
IC
15
(A)
Eon, Eoff – IC
Common emitter
VCC = 300 V
VGG = 15 V
RG = 43 Ω
: Tc = 25°C
: Tc = 125°C
5
Eon
0.5
3
Collector current
Switching loss
(mJ)
Eon, Eoff
1
Switching loss
3
(A)
1
0.01
1000
10
5
IC
15
Switching time toff, tf – IC
toff, tf
0.5
12
3
Common emitter
VCC = 300 V
VGG = 15 V
IC = 15 A
: Tc = 25°C
: Tc = 125°C
Switching time
(µs)
toff, tf
Switching time
1
9
Collector current
Switching time toff, tf – RG
3
6
(Note 2)
0.5
0.3
0.1
Eoff
Eon
0.05
0.03
0.05
0.03
1
3
10
30
100
Gate resistance RG
300
0.01
1000
(Ω)
0
3
6
Collector current
4
9
IC
12
15
(A)
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GT15J321
VCE, VGE – QG
C – VCE
500
Cies
3
10
30
100
300
1000
Collector-emitter voltage VCE
300
200
8
4
100
20
40
(V)
IF − VF
Irr
(A)
Reverse recovery current
IF
Forward current
15
Tc = 125°C
25
5
−40
0.4
0.8
1.2
Forward voltage
1.6
VF
30
10
100
30
0
3
(V)
IC max (pulsed)*
IF
10
15
(A)
30
50 µs*
100 µs*
1 ms*
DC operation
10 ms*
1
*: Single
nonrepetitive pulse
0.5
Tc = 25°C
0.3
Curves must be derated
linearly with increase in
temperature.
0.1
1
3
10
12
Reverse bias SOA
(A)
3
9
Forward current
10
IC
(A)
IC
Collector current
5
6
50
IC max (continuous)
10
300
Irr
1
2.0
1000
3
5
Collector current
30
0
120
(nC)
trr
Safe operating area
50
QG
100
Common collector
di/dt = −100 A/µs
VGE = 0
: Tc = 25°C
: Tc = 125°C
(A)
Common collector
VGE = 0
20
0
0
80
trr, Irr − IF
100
10
60
Gate charge
30
25
200
VCE = 100 V
0
0
3000
(V)
12
(ns)
3
1
Cres
Common emitter
VGE = 0
f = 1 MHz
Tc = 25°C
300
trr
10
Coes
16
Reverse recovery time
Capacitance
100
RL = 20 Ω
400 Tc = 25°C
VGE
(V)
Collector-emitter voltage VCE
300
C
(pF)
1000
30
20
Common emitter
Gate-emitter voltage
3000
3
1
0.5
0.3
30
100
Collector-emitter voltage VCE
300
0.1
1
1000
(V)
Tj <
= 125°C
VGE = 15 V
RG = 43 Ω
3
10
30
100
Collector-emitter voltage VCE
5
300
1000
(V)
2002-01-18
GT15J321
Transient thermal impedance
rth (t) (°C/W)
10
10
rth (t) – tw
2
Tc = 25°C
1
FRD
10
10
10
10
10
0
IGBT
−1
−2
−3
−4
10
−5
10
−4
10
−3
10
−2
Pulse width
10
−1
tw
10
0
10
1
10
2
(s)
6
2002-01-18
GT15J321
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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2002-01-18