PHILIPS HEF4737BP

INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
• The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
• The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4737B
HEF4737V
LSI
Quadruple static decade counters
Product specification
File under Integrated Circuits, IC04
January 1995
Philips Semiconductors
Product specification
HEF4737B
HEF4737V
Quadruple static decade counters
The complementary MOS structure gives the devices very
low stand-by and operating dissipation. Operating from a
single supply voltage all outputs can drive one standard
TTL input without interface circuitry under all specified
operating conditions.
DESCRIPTION
The HEF4737B and HEF4737V are static quadruple
decade counters for frequencies from 0 to 10 MHz. The
counters are supplied with an extra overload flip-flop giving
a total count capability of 19 999. The counter has the
following inputs and outputs: a count input (CP), an
asynchronous reset input (MR), an asynchronous preset
input (PL), a transfer input (T), an output enable input (EO)
(which controls the BCD outputs), the digit select inputs
(SA, SB, SC) (which perform selection of the contents of the
latches to the 3-state BCD outputs (O0 to O3)), and the
carry outputs (CO2 to CO5) (which give the carry signals of
the decades except from the first decade).
The BCD digit outputs are LOCMOS 3-state outputs. The
high impedance off-state feature allows common busing of
the outputs. The counters are supplied with asynchronous
reset and preset to 19 999 facilities making them suitable
for counter and time base applications. All carry signals
are available except from the first decade.
Schmitt-trigger action in the inputs makes the circuit highly
tolerant to slower input rise and fall times.
Recommended supply voltage range for HEF4737B is 3 to
15 V and for HEF4737V is 4,5 to 12,5 V.
HEF4737BP;
HEF4737VP(N); 18-lead DIL
plastic (SOT102-1)
HEF4737BD;
HEF4737VD(F); 18-lead DIL
ceramic (SOT133B)
( ): Package Designator North America
SUPPLY VOLTAGE
Fig.1 Pinning diagram.
RECOMMENDED
OPERATING
HEF4737B
−0,5 to 18
3,0 to 15,0
V
HEF4737V
−0,5 to 18
4,5 to 12,5
V
FAMILY DATA, IDD LIMITS category LSI
PINNING
CP
count input
MR
asynchronous reset input
PL
asynchronous preset input
T
transfer input
SA, SB, SC
digit select inputs
EO
output enable input
O0 to O3
BCD outputs
CO2 to CO5
carry outputs
January 1995
RATING
See Family Specifications
2
Philips Semiconductors
Product specification
HEF4737B
HEF4737V
Quadruple static decade counters
Fig.2 Block diagram.
FUNCTIONAL DESCRIPTION
Preset input (PL)
Input signals
This is an asynchronous preset. When MR is LOW a HIGH
at the PL input will preset the counter to 19 999
independent of the level at the count input.
Count input (CP)
The signal to be counted is applied to this input. When PL
and MR are LOW the contents of the counter increments
by one at a LOW to HIGH transition of CP.
Transfer input (T)
A HIGH level applied to this input allows the information
held by the counter to pass to the latches.
Reset input (MR)
Output enable input (EO)
This is an asynchronous reset. A HIGH level applied to this
input will reset the counter to zero independent of the level
at the count input and preset input.
January 1995
A HIGH level at this input enables the BCD outputs and
information can be read out of the latches using the
3
Philips Semiconductors
Product specification
HEF4737B
HEF4737V
Quadruple static decade counters
multiplexer. A LOW level at this input disables the BCD
outputs making them floating (high impedance off-state).
Output signals
The carry outputs are active LOW outputs.
Digit select inputs (SA, SB, SC)
Carry output CO2
SA
SB
SC
L
L
L
selects D1 (LSD)
H
L
L
selects D2
L
H
L
selects D3
H
H
L
selects D4
X
X
H
selects D5 (MSD)
When the contents of the first two decades of the counter
are both 9 then the CO2 output becomes LOW. It remains
LOW until the next LOW to HIGH transition of the count
input, i.e. until the contents of the first two decades are
zero. CO2 is LOW when the contents of the counter are: 00
099, 00 199, 00 299 etc.
Carry output CO3
When the contents of the first three decades of the counter
are all 9 then the CO3 output becomes LOW. It remains
LOW until the next LOW to HIGH transition of the count
input, i.e. until the contents of the first three decades are
zero. CO3 is LOW when the contents of the counter are
00 999, 01 999, 02 999 etc.
Notes
1. H = HIGH state (the more positive voltage)
2. L = LOW state (the less positive voltage)
3. X = state is immaterial
4. When D5 is selected, the contents of D5 is available at
O0 and O1, O2 and O3 are LOW.
Carry output CO4
5. LSD = least significant divider
When the contents of the first four decades of the counter
are all 9 then the CO4 output becomes LOW. It remains
LOW until the next LOW to HIGH transition of the count
input, i.e. until the contents of the first four decades are
zero. CO4 is LOW when the contents of the counter are
09 999 and 19 999.
6. MSD = most significant divider
The carry signals CO2 , CO3 and CO4 are suppressed
while the preset is active. A HIGH to the preset input sets
the counter to 19 999 but the carry signals remain HIGH
until preset input returns to LOW, then the carry outputs
will also become LOW.
Carry output CO5
When the content of the counter is 10 000 the CO5 output
becomes LOW. It returns to HIGH when the content of the
counter is zero.
Digit outputs (O0 to O3)
The digit outputs give the contents of the selected latch.
The output is in the form of BCD, positive logic.
January 1995
4
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Philips Semiconductors
Quadruple static decade counters
January 1995
5
Product specification
HEF4737B
HEF4737V
Fig.3 Timing diagram.
Philips Semiconductors
Product specification
HEF4737B
HEF4737V
Quadruple static decade counters
The values given at VDD = 15 V in the following d.c. and a.c. characteristics, are not applicable to the HEF4737V,
because of its reduced supply voltage range.
DC CHARACTERISTICS
VSS = 0 V
Tamb (°C)
VDD
V
VOH
V
VOL
V
−40
SYMBOL
+ 25
+ 85
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
−
−
−
0,3
−
1
Input leakage
current at
VI = 0 or VDD
Output (sink)
current LOW
10
± IIN
15
4,75
0,4
10
0,5
15
IOL
5
4,6
current HIGH
10
9,5
15
13,5
5
2,5
−
−
−
0,3
−
1
µA
1,6
−
1,6
−
1,4
−
mA
2,5
−
2,3
−
1,7
−
mA
7,0
−
6,0
−
4,0
−
mA
0,96
−
0,80
−
0,65
−
mA
2,4
−
2,0
−
1,6
−
mA
7,0
−
6,0
−
4,5
−
mA
3,0
−
2,5
−
2,0
−
mA
−
1,6
−
1,6
−
12
µA
−
1,6
−
1,6
−
12
µA
1,5
Output (source)
µA
−IOH
Output (source)
current HIGH
−IOH
3-state output
leakage current
10
VO = 0 or VDD
15
± IOZ
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 15 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL
MIN.
TYPICAL EXTRAPOLATION
FORMULA
TYP. MAX.
Propagation delays
CP → On
(D1 selected)
HIGH to LOW
LOW to HIGH
CP → On
(D5 selected)
HIGH to LOW
LOW to HIGH
5
640
ns
308 ns + (0,24 ns/pF) CL
120
240
ns
125 ns + (0,10 ns/pF) CL
15
90
180
ns
86 ns + (0,07 ns/pF) CL
5
320
640
ns
296 ns + (0,48 ns/pF) CL
10
tPHL
120
240
ns
110 ns + (0,20 ns/pF) CL
15
90
180
ns
82 ns + (0,15 ns/pF) CL
5
620
1240
ns
608 ns + (0,24 ns/pF) CL
10
tPLH
330
660
ns
325 ns + (0,10 ns/pF) CL
15
250
500
ns
246 ns + (0,07 ns/pF) CL
5
620
1240
ns
596 ns + (0,48 ns/pF) CL
330
660
ns
320 ns + (0,20 ns/pF) CL
250
500
ns
242 ns + (0,15 ns/pF) CL
10
10
tPHL
tPLH
15
January 1995
320
6
Philips Semiconductors
Product specification
HEF4737B
HEF4737V
Quadruple static decade counters
VDD
V
CP → CO2
HIGH to LOW
LOW to HIGH
SYMBOL
MIN.
5
TYPICAL EXTRAPOLATION
FORMULA
TYP. MAX.
220
440
ns
208 ns + (0,24 ns/pF) CL
110
220
ns
105 ns + (0,10 ns/pF) CL
15
85
170
ns
81 ns + (0,07 ns/pF) CL
5
220
400
ns
196 ns + (0,48 ns/pF) CL
10
tPHL
110
220
ns
100 ns + (0,20 ns/pF) CL
15
85
170
ns
77 ns + (0,15 ns/pF) CL
5
350
700
ns
338 ns + (0,24 ns/pF) CL
10
tPLH
Propagation delays
CP → CO5
HIGH to LOW
LOW to HIGH
Sn → On
HIGH to LOW
LOW to HIGH
T→ On
HIGH to LOW
LOW to HIGH
MR → On
HIGH to LOW
PL → On
LOW to HIGH
MR → COn
LOW to HIGH
PL → COn
HIGH to LOW
160
320
ns
155 ns + (0,10 ns/pF) CL
15
120
240
ns
116 ns + (0,07 ns/pF) CL
5
350
700
ns
326 ns + (0,48 ns/pF) CL
10
tPHL
160
320
ns
150 ns + (0,20 ns/pF) CL
15
120
240
ns
112 ns + (0,15 ns/pF) CL
5
200
400
ns
188 ns + (0,24 ns/pF) CL
10
tPLH
80
160
ns
75 ns + (0,10 ns/pF) CL
15
55
110
ns
51 ns + (0,07 ns/pF) CL
5
200
400
ns
176 ns + (0,48 ns/pF) CL
10
tPHL
80
160
ns
70 ns + (0,20 ns/pF) CL
15
55
110
ns
47 ns + (0,15 ns/pF) CL
5
220
440
ns
208 ns + (0,24 ns/pF) CL
10
tPLH
90
180
ns
85 ns + (0,10 ns/pF) CL
15
60
120
ns
56 ns + (0,07 ns/pF) CL
5
220
440
ns
196 ns + (0,48 ns/pF) CL
90
180
ns
80 ns + (0,20 ns/pF) CL
10
10
tPHL
tPLH
15
60
120
ns
52 ns + (0,15 ns/pF) CL
5
490
980
ns
478 ns + (0,24 ns/pF) CL
200
400
ns
195 ns + (0,10 ns/pF) CL
10
tPHL
15
60
120
ns
56 ns + (0,07 ns/pF) CL
5
260
520
ns
236 ns + (0,48 ns/pF) CL
110
220
ns
100 ns + (0,20 ns/pF) CL
10
tPLH
15
85
170
ns
77 ns + (0,15 ns/pF) CL
5
350
700
ns
326 ns + (0,48 ns/pF) CL
160
320
ns
150 ns + (0,20 ns/pF) CL
10
tPLH
15
120
240
ns
112 ns + (0,15 ns/pF) CL
5
350
700
ns
338 ns + (0,24 ns/pF) CL
160
320
ns
155 ns + (0,10 ns/pF) CL
120
240
ns
116 ns + (0,07 ns/pF) CL
10
tPHL
15
January 1995
7
Philips Semiconductors
Product specification
HEF4737B
HEF4737V
Quadruple static decade counters
VDD
V
Output transition
SYMBOL
MIN.
TYPICAL EXTRAPOLATION
FORMULA
TYP. MAX.
5
35
70
ns
15 ns +
(0,40 ns/pF) CL
times; any output
10
18
36
ns
9 ns +
(0,18 ns/pF) CL
HIGH to LOW
15
15
30
ns
8 ns +
(0,13 ns/pF) CL
5
50
100
ns
15 ns +
(0,70 ns/pF) CL
30
60
ns
13 ns +
(0,33 ns/pF) CL
25
50
ns
13 ns +
(0,23 ns/pF) CL
LOW to HIGH
10
tTHL
tTLH
15
3-state propagation delays
Output disable times
EO → On
HIGH
5
60
120
ns
35
70
ns
25
50
ns
60
120
ns
35
70
ns
15
25
50
ns
5
90
180
ns
40
80
ns
10
tPHZ
15
5
LOW
10
tPLZ
Output enable times
EO → On
HIGH
LOW
10
tPZH
15
30
60
ns
5
90
180
ns
40
80
ns
30
60
ns
10
tPZL
15
Maximum CP pulse
width; LOW
5
10
tWCPL
15
Minimum MR pulse
width; HIGH
5
10
tWMRH
15
Minimum PL pulse
width; HIGH
5
10
tWPLH
15
Minimum T pulse
5
width; HIGH
10
tWTH
15
Maximum clock
pulse frequency
80
ns
60
30
ns
50
25
ns
100
50
ns
50
25
ns
40
20
ns
120
60
ns
60
30
ns
50
25
ns
100
50
ns
40
20
ns
36
18
ns
5
10
15
January 1995
160
3
6
MHz
8
16
MHz
10
20
MHz
fmax
8
Philips Semiconductors
Product specification
HEF4737B
HEF4737V
Quadruple static decade counters
VDD
V
Dynamic power
dissipation per
package (P)
5
TYPICAL FORMULA FOR P (µW)
950 fi + ∑ (foCL) × VDD2
10
4 200 fi + ∑ (foCL) × VDD
15
11 200 fi + ∑ (foCL) × VDD
2
2
where
fi = input freq. (MHz)
fo = output freq. (MHz)
CL = load cap. (pF)
∑ (foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
9