ETC HFB60HF20

PD - 94067C
HFB60HF20
Ultrafast, Soft Recovery Diode
FRED
Features
•
•
•
•
•
VR = 200V
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Surface Mount
IF(AV) = 60A
trr = 35ns
Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
Parameter
VR
IF(AV)
IFSM
PD @ TC = 25°C
TJ, TSTG
Cathode to Anode Voltage
Continuous Forward Current, Q TC = 55°C
Single Pulse Forward Current, R TC = 25°C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Max.
Units
200
60
500
70
-55 to +150
V
A
W
°C
Note: Q D.C. = 50% rect. wave
R 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
CASE STYLE
SMD-1
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CATHODE
ANODE
ANODE
1
07/10/01
HFB60HF20
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
VF
Min. Typ. Max. Units
—
—
—
1.15
V
Test Conditions
Cathode Anode Breakdown Voltage
Forward Voltage
200
—
IR = 100µA
IF = 30A, TJ =-55°C
See Fig. 1
—
—
0.97
—
—
1.08
—
—
1.30
IF =120A, TJ = 25°C
—
—
0.8
IF = 30A, TJ =125°C
IF = 30A, TJ = 25°C
V
IF = 60A, TJ = 25°C
See Fig. 2
IR
Reverse Leakage Current
See Fig. 2
—
—
—
—
50
1.0
µA
mA
VR = VR Rated
VR = VR Rated, TJ = 125°C
CT
Junction Capacitance, See Fig. 3
—
—
190
pF
VR = 200V
LS
Series Inductance
—
5.9
—
nH
Measured from center of cathode
pad to center of anode pad
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
t rr
trr1
trr2
IRRM1
IRRM2
Q rr1
Q rr2
di(rec)M/dt1
di(rec)M/dt2
Min.
Reverse Recovery Time
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During tb
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—
45
71
5.3
10.3
120
366
590
1290
35
—
—
—
—
—
—
—
—
Test Conditions
ns
ns
IF = 1.0A,VR = 30V, dif/dt = 300A/µs
TJ = 25°C See Fig.
TJ = 125°C
5
IF = 60A
TJ = 25°C See Fig.
A
A
TJ = 125°C
6
VR = 160V
TJ = 25°C See Fig.
nC
TJ = 125°C
7
dif/dt = 200A/µs
nC
TJ = 25°C See Fig.
A/µs
8
A/µs TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
RthJC
Wt
2
Junction-to-Case
Weight
Typ.
Max.
Units
—
2.6
1.76
—
°C/W
g
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HFB60HF20
100
1000
I ( uA )
Reverse Current - R
Instantaneous Forward Current - I F (A)
125°C
100
10
100°C
75°C
1
25°C
0.1
0.01
0.001
0
40
80
120
160
200
Reverse Voltage - VR (V)
Fig. 2 - Typical Reverse Current Vs. Reverse
Voltage
10000
10
Junction Capacitance - C T (pF)
Tj = 125°C
Tj = 25°C
Tj = -55°C
1000
T J = 25°C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
0
Forward Voltage Drop - V F (V)
40
80
120
160
200
Reverse Voltage - V R (V)
Fig. 1 - Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.1
0.05
t1
0.02
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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3
HFB60HF20
100
100
VR = 160V
TJ = 125°C
TJ = 25°C
I F = 120A
IF = 60A
IF = 30A
60
IF = 60A
IF = 30A
IRRM - ( A )
trr - ( ns )
80
IF = 120A
10
VR = 160V
40
TJ = 125°C
TJ = 25°C
20
1
100
1000
100
1000
dif / dt - ( A / µs )
dif / dt - ( A / µs )
Fig. 5 - Typical Reverse Recovery Vs. dif/dt,
Fig. 6 - Typical Recovery Current Vs. dif/dt,
10000
10000
IF = 30A
IF = 120A
di ( rec )M / dt - ( A / µs )
IF = 60A
1000
Qrr - ( nC )
IF = 30A
100
VR = 160V
IF = 60A
IF = 120A
1000
VR = 160V
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
10
100
1000
dif / dt - ( A / µs )
Fig. 7 - Typical Stored Charge Vs. dif/dt
4
100
100
1000
dif / dt - ( A / µs )
Fig. 8 - Typical di(rec)M/dt Vs. dif/dt
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HFB60HF20
3
t rr
IF
R E V E R S E R E C O V E R Y C IR C U IT
tb
ta
0
Q rr
V R = 2 00 V
2
I RRM
4
0.5 I R R M
di(rec)M /dt
0.01 Ω
0.75 I R R M
L = 70µH
1
D .U .T.
D
d if/d t
A D JU S T
G
5
IR F P 2 50
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Case Outline and Dimensions — SMD-1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
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5