HM62W9127HB Series 1 M High Speed SRAM (128-kword × 9-bit) ADE-203-792A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The HM62W9127HB is an asynchronous 3.3 V operation high speed static RAM organized as 131072word × 9-bit. It realize high speed access time (25/30 ns) with employing 0.8 µm shrink CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W9127HB is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features • Single 3.3 V supply: 3.3 V ± 0.3 V • Access time 25/30 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • 400-mil 36-pin SOJ package • Center VCC and VSS type pinout Ordering Information Type No. Access time Package HM62W9127HBJP-25 HM62W9127HBJP-30 25 ns 30 ns 400-mil 36-pin plastic SOJ (CP-36D) HM62W9127HBLJP-25 HM62W9127HBLJP-30 25 ns 30 ns HM62W9127HB Series Pin Arrangement HM62W9127HBJP/LJP Series NC 1 36 A4 A3 2 35 A5 A2 3 34 A6 A1 4 33 A7 A0 5 32 OE CS 6 31 I/O9 I/O1 7 30 I/O8 I/O2 8 29 I/O7 VCC 9 28 VSS VSS 10 27 VCC I/O3 11 26 I/O6 I/O4 12 25 I/O5 WE 13 24 A8 A16 14 23 A9 A15 15 22 A10 A14 16 21 A11 A13 17 20 A12 NC 18 19 NC (Top view) Pin Description Pin name Function A0 to A16 Address input I/O1 to I/O9 Data input/output CS Chip select OE Output enable WE Write enable VCC Power supply VSS Ground NC No connection 2 HM62W9127HB Series Block Diagram (LSB) A3 A2 A1 A0 A7 A6 A5 A4 (MSB) VCC VSS Memory matrix 256 rows × 512 columns × 9 bit (1,179,648 bits) Row decoder CS Column I/O I/O1 . . . I/O9 Input data control Column decoder CS (LSB) A13 A12 A11 A14 A15 A16 A10 A9 A8 (MSB) WE CS OE CS Function Table CS OE WE Mode VCC current I/O Ref. cycle H × × Standby I SB , I SB1 High-Z — L H H Output disable I CC High-Z — L L H Read I CC Dout Read cycle (1) to (3) L H L Write I CC Din Write cycle (1) L L Write I CC Din Write cycle (2) L Note: ×: H or L 3 HM62W9127HB Series Absolute Maximum Ratings Parameter Symbol Value Supply voltage relative to VSS VCC –0.5 to +4.6 Unit V 1 2 Voltage on any pin relative to V SS VT –0.5* to V CC+0.5* V Power dissipation PT 1.0 W Operating temperature Topr 0 to +70 °C Storage temperature Tstg –55 to +125 °C Storage temperature under bias Tbias –10 to +85 °C Notes: 1. VT min = –2.5 V for pulse width (under shoot) ≤ 10 ns 2. Maximum voltage: 4.6 V. Recommended DC Operating Conditions (Ta = 0 to +70°C) Parameter Supply voltage Input voltage Symbol Min Typ Max Unit VCC* 2 3.0 3.3 3.6 V VSS * 3 0 0 0 V — VCC + 0.3 V — 0.8 V VIH VIL 2.0 1 –0.3* Notes: 1. VIL min = –2.0 V for pulse width (under shoot) ≤ 10 ns 2. The supply voltage with all VCC pins must be on the same level. 3. The supply voltage with all VSS pins must be on the same level. 4 HM62W9127HB Series DC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0V) Parameter Symbol Min Typ*1 Max Unit Test conditions Input leakage current IILII — — 2 µA Vin = VSS to V CC Output leakage current IILO I — — 2 µA Vin = VSS to V CC 25 ns cycle I CC — — 80 mA CS = VIL, lout = 0 mA Other inputs = VIH/V IL 30 ns cycle I CC — — 70 25 ns cycle I SB — — 40 mA CS = VIH, Other inputs = VIH/V IL 30 ns cycle I SB — — 35 — — 1 mA VCC ≥ CS ≥ VCC - 0.2 V, (1) 0 V ≤ Vin ≤ 0.2 V or (2) VCC ≥ Vin ≥ VCC - 0.2 V —* 2 —* 2 0.15*2 — — 0.2 V I OL = 0.1 mA — — 0.4 Operation power supply current Standby power supply current I SB1 Output voltage VOL VOH I OL = 2 mA VCC – 0.2 — — V I OH = –0.1 mA 2.4 — V I OH = –2 mA — Notes: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed. 2. This characteristics is guaranteed only for L-version. Capacitance (Ta = +25°C, f = 1.0 MHz) Parameter 1 Input capacitance* Input/output capacitance* Note: 1 Symbol Min Typ Max Unit Test conditions Cin — — 6 pF Vin = 0 V CI/O — — 8 pF VI/O = 0 V 1. This parameter is sampled and not 100% tested. 5 HM62W9127HB Series AC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, unless otherwise noted.) Test Conditions • • • • Input pulse levels: 2.4 V/0.4 V Input rise and fall time: 3 ns Input and output timing reference levels: 1.4V Output load: See figures (Including scope and jig) Dout Dout 500 Ω 30 pF 5 pF 1.4V Output load (A) 500 Ω 1.4V Output load (B) (for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW) Read Cycle HM62W9127HB-25 HM62W9127HB-30 Parameter Symbol Min Max Min Max Unit Read cycle time t RC 25 — 30 — ns Address access time t AA — 25 — 30 ns Chip select access time t ACS — 25 — 30 ns Output enable to output valid t OE — 15 — 15 ns Output hold from address change t OH 5 — 5 — ns Chip select to output in low-Z t CLZ 5 — 5 — ns 1 Output enable to output in low-Z t OLZ 1 — 1 — ns 1 Chip deselect to output in high-Z t CHZ — 12 — 12 ns 1 Output disable to output in high-Z t OHZ — 12 — 12 ns 1 6 Notes HM62W9127HB Series Write Cycle HM62W9127HB-25 HM62W9127HB-30 Parameter Symbol Min Max Min Max Unit Write cycle time t WC 25 — 30 — ns Address valid to end of write t AW 20 — 20 — ns Chip select to end of write t CW 20 — 20 — ns 9 Write pulse width t WP 20 — 20 — ns 8 Address setup time t AS 0 — 0 — ns 6 Write recovery time t WR 0 — 0 — ns 7 Data to write time overlap t DW 15 — 15 — ns Data hold from write time t DH 0 — 0 — ns Write disable to output in low-Z t OW 5 — 5 — ns 1 Output disable to output in high-Z t OHZ — 12 — 12 ns 1 Write enable to output in high-Z t WHZ — 12 — 12 ns 1 Note: Notes 1. Transition is measured ±200 mV from steady voltage with Load (B). This parameter is sampled and not 100% tested. 2. Address should be valid prior to or coincident with CS transition low. 3. WE and/or CS must be high during address transition time. 4. If CS and OE are low during this period, I/O pins are in the output state. Then, the data input signals of opposite phase to the outputs must not be applied to them. 5. If the CS low transition occurs simultaneously with the WE low transition or after the WE transition, output remains a high impedance state. 6. t AS is measured from the latest address transition to the later of CS or WE going low. 7. t WR is measured from the earlier of CS or WE going high to the first address transition. 8. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going low and WE going low. A write ends at the earliest transition among CS going high and WE going high. tWP is measured from the beginning of write to the end of write. 9. t CW is measured from the later of CS going low to the end of write. 7 HM62W9127HB Series Timing Waveforms Read Timing Waveform (1) (WE = VIH) t RC Address Valid address t OH t AA t CHZ t ACS CS t OE t OHZ OE t OLZ t CLZ Dout High impedance Valid data Read Timing Waveform (2) (WE = VIH, CS = VIL , OE = VIL ) t RC Address Valid address t OH t AA t OH Dout 8 Valid data HM62W9127HB Series Read Timing Waveform (3) (WE = VIH, CS = VIL , OE = VIL )*2 tRC CS tACS tCHZ tCLZ Dout High Impedance Valid data High Impedance Write Timing Waveform (1) (WE Controlled) t WC Valid address Address t WR t AW OE t CW CS*3 t AS t WP WE*3 t OHZ High impedance*5 Dout t DW Din *4 t DH Valid data *4 9 HM62W9127HB Series Write Timing Waveform (2) (CS Controlled) t WC Valid address Address t WR t CW CS *3 t AW t WP WE *3 t AS t WHZ t OW High impedance*5 Dout t DW Din 10 *4 t DH Valid data *4 HM62W9127HB Series Low VCC Data Retention Characteristics (Ta = 0 to 70°C) This characteristics is guaranteed only for L-version. Parameter Symbol Min Typ*1 Max Unit Test conditions VCC for data retention VDR 2.0 — — V VCC ≥ CS ≥ VCC – 0.2 V (1) 0 V ≤ Vin ≤ 0.2 V or (2) VCC ≥ Vin ≥ VCC – 0.2 V Data retention current I CCDR — 2 80 µA VCC = 3 V, VCC ≥ CS ≥ VCC – 0.2 V (1) 0 V ≤ Vin ≤ 0.2 V or (2) VCC ≥ Vin ≥ VCC – 0.2 V Chip deselect to data retention time t CDR 0 — — ns See retention waveform Operation recovery time tR 5 — — ms Note: 1. Typical values are at VCC = 3.0 V, Ta = +25°C, and not guaranteed. Low V CC Data Retention Timing Waveform tCDR Data retention mode tR VCC 3.0 V VDR 2.0 V CS 0V VCC ≥ CS ≥ VCC – 0.2 V 11 HM62W9127HB Series Package Dimensions HM62W9127HBJP/LJP Series (CP-36D) Unit: mm 23.25 23.62 Max 10.16 ± 0.13 0.43 ± 0.10 0.41 ± 0.08 1.27 0.10 Dimension including the plating thickness Base material dimension 12 0.80 +0.25 –0.17 1.30 Max 2.85 ± 0.12 18 0.74 3.50 ± 0.26 1 11.18 ± 0.13 19 36 9.40 ± 0.25 Hitachi Code JEDEC EIAJ Weight (reference value) CP-36D Conforms Conforms 1.4 g HM62W9127HB Series When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 01628-585000 Fax: 01628-585160 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright © Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 13 HM62W9127HB Series Revision Record Rev. Date Contents of Modification Drawn by Approved by 0.0 Jun. 9, 1997 Initial issue Y. Saitoh A. Ide 0.1 Nov. 1997 Change of Subtitle 14