HMC559 v01.0406 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz Typical Applications Features The HMC559 wideband PA is ideal for: P1dB Output Power: +28 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +36 dBm • Military & Space Supply Voltage: +10V @ 400 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 3.12 mm x 1.50 mm x 0.1 mm Functional Diagram General Description The HMC559 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 20 GHz. The amplifier provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10V supply. Gain flatness is slightly positive from 4 to 20 GHz making the HMC559 ideal for EW, ECM and radar driver amplifier applications. The HMC559 amplifier I/O’s are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 6.0 11 13 Gain Flatness ±0.5 Gain Variation Over Temperature 0.01 Typ. Max. Min. 6.0 - 12.0 11 13.5 11.5 ±0.5 0.02 0.01 Typ. Max. 12.0 - 20.0 0.02 GHz 14 dB ±1.5 dB 0.02 0.03 dB/ °C Input Return Loss 22 15 13 Output Return Loss 16 16 8 dB 27 dBm 28.5 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 25 28 30 24.5 27.5 29 23 dB Output Third Order Intercept (IP3) 37 36 33 dBm Noise Figure 4.5 3.5 4.5 dB Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 400 400 400 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical. 1 - 180 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC559 v01.0406 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz 20 15 18 10 16 5 14 S21 S11 S22 0 -5 -10 12 10 8 -15 6 -20 4 -25 2 +25C +85C -55C 0 0 5 10 15 20 25 0 2 4 6 FREQUENCY (GHz) 10 12 14 16 18 20 22 Output Return Loss vs. Temperature Input Return Loss vs. Temperature 0 0 +25C +85C -55C +25C +85C -55C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 8 FREQUENCY (GHz) AMPLIFIERS - CHIP 20 -30 -10 -15 -20 -10 -15 -20 -25 -30 -25 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 18 20 22 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 7 0 6 -10 +25C +85C -55C -20 NOISE FIGURE (dB) ISOLATION (dB) 1 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Gain & Return Loss -30 -40 -50 5 4 3 2 +25C +85C -55C 1 -60 0 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 181 HMC559 v01.0406 P1dB vs. Temperature Psat vs. Temperature 32 32 30 30 28 28 Psat (dBm) P1dB (dBm) AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz 26 24 26 24 +25C +85C -55C 22 +25C +85C -55C 22 20 20 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 FREQUENCY (GHz) Output IP3 vs. Temperature 12 14 16 18 22 50 40 9.5V 10V 10.5V OIP3 (dBm) 45 35 30 40 35 +25C +85C -55C 25 20 30 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 8 FREQUENCY (GHz) 10 12 14 16 18 20 22 24 OUTPUT POWER (dBm) Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Gain, Power & OIP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 9.5 Gain P1dB Psat OIP3 10 10.5 Vdd Supply Voltage (Vdc) 1 - 182 20 Output IP3 vs. Output Power 45 OIP3 (dBm) 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 HMC559 v01.0406 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz Pout Gain PAE 24 20 16 12 8 4 0 28 Pout Gain PAE 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 INPUT POWER (dBm) 8 10 12 14 16 18 20 22 INPUT POWER (dBm) AMPLIFIERS - CHIP 32 28 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 32 Power Dissipation Power Compression @ 20 GHz 5.5 32 Max Pdiss @ +85C 28 POWER DISSIPATION (W) Pout (dBm), GAIN (dB), PAE (%) 1 Power Compression @ 10 GHz Power Compression @ 2 GHz 24 20 16 12 Pout Gain PAE 8 4 0 5 4.5 4 2 GHz 3.5 10 GHz 3 2.5 0 2 4 6 8 10 12 14 16 -5 0 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) +11 Vdc 5 10 15 20 25 Typical Supply Current vs. Vdd Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2.0 to 0 Vdc +9.5 399 Gate Bias Voltage (Vgg2) +3V to +5V +10 400 +10.5 401 RF Input Power (RFin)(Vdd = +10 Vdc) +30 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 55 mW/°C above 85 °C) 5W Thermal Resistance (channel to die bottom) 18 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A 30 INPUT POWER (dBm) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 183 HMC559 v01.0406 Outline Drawing AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz Die Packaging Information [1] Standard Alternate GP-1 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 184 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC559 v01.0406 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz Pad Number Function Description 1 IN This pad is DC coupled and matched to 50 Ohms from DC - 20GHz. Blocking capacitor is required. 2 Vgg2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +4V should be applied to Vgg2. 3 ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 4 OUT & Vdd RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 5 Vgg1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. 6 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com AMPLIFIERS - CHIP 1 Pad Descriptions 1 - 185 HMC559 v01.0406 Assembly Diagram AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA 1 - 186 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC559 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. AMPLIFIERS - CHIP v01.0406 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 187