HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Analog Switch Applications Unit: mm · High input impedance and extremely low drive current. · Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.8 to 2.5 V · Switching speed is fast. · Suitable for high-density mounting because of a compact package. Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Drain-source voltage VDS 50 V Gate-source voltage VGSS 10 V ID 50 mA 200 mW DC drain current Drain power dissipation PD (Note) Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C Note: TOTAL rating ― JEITA ― TOSHIBA Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic JEDEC Symbol Test Condition 2-2J1C Weight: 6.8 mg Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 V ¾ ¾ 1 mA V (BR) DSS ID = 100 mA, VGS = 0 V 50 ¾ ¾ V IDSS VDS = 50V, VGS = 0 V ¾ ¾ 1 mA Vth VDS = 5V, ID = 0.1 mA 0.8 ¾ 2.5 V Forward transfer admittance ïYfsï VDS = 5V, ID = 10 mA 20 ¾ ¾ mS Drain-source ON resistance RDS (ON) ID = 10 mA, VGS = 4.0 V ¾ 20 50 W Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Input capacitance Ciss VDS = 5 V, VGS=0 V, f = 1 MHz ¾ 6.3 ¾ pF Reverse transfer capacitance Crss VDS = 5 V, VGS=0 V, f = 1 MHz ¾ 1.3 ¾ pF Output capacitance Coss pF VDS = 5 V, VGS=0 V, f = 1 MHz ¾ 5.7 ¾ ton VDD = 5 V, ID = 10 mA, VGS = 0 to 4.0 V ¾ 0.11 ¾ toff VDD = 5 V, ID = 10 mA, VGS = 0 to 4.0 V ¾ 0.15 ¾ Switching time 1 ms 2002-01-16 HN1K04FU Equivalent Circuit (top view) 6 5 Marking 4 6 Q1 2 4 KH Q2 1 5 1 3 2 3 (Q1, Q2 common) Switching Time Test Circuit (a) Test circuit (b) VIN ID 4V 10 ms VIN OUT RL 50 W IN VGS VDD VDD = 5 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C 4V 0 90% 10% VDD 10% (c) VOUT VDS 90% VDS (ON) tr ton 2 tf toff 2002-01-16 HN1K04FU (Q1, Q2 common) ID – VDS 60 Ta = 25°C 2.7 40 Drain current ID 1.0 (mA) 50 3.0 30 2.4 20 VGS = 2.1 V 0 1.65 0.6 VGS = 1.6 V 0.4 1.55 2 4 6 8 10 0 0 12 50 30 VGS = 0 5 (mA) Ta = 25°C G Drain current ID D 3 IDR 1 S 0.5 0.3 0.2 0.3 0.4 0.1 0.05 0.03 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Ta = 100°C Common source VDS = 5 V 5 3 1 0.5 0.3 25 -25 0.1 0.05 (V) 1 2 3 4 5 6 7 Drain-source voltage VGS ïYfsï – ID 8 9 (V) C – VDS 100 Common Common source source 50 VDS = 5 V Ta = 25°C VGS = 0 30 f = 1 MHz Capacitance C (pF) Forward transfer admittance ïYfsï (mS) (V) ID – VGS 10 0.01 0 -1.8 100 30 10 Ta = 25°C 10 Ciss 5 3 Coss 1 5 Crss 0.5 3 0.5 0.6 0.03 Drain-source voltage VDS 50 0.5 Drain-source voltage VDS Common source 10 0.1 (V) IDR – VDS 50 30 1.5 1.5 Drain-source voltage VDS (mA) Ta = 25°C 0.2 1.8 Drain reverse current IDR 1.7 0.8 10 0.01 0 Common source 4.0 2.0 1.8 Drain current ID (mA) Common source 4.0 ID – VDS (low voltage region) 1.2 1 3 5 10 Drain current ID 30 50 0.3 0.1 100 (mA) 0.3 0.5 1 3 5 10 Drain-source voltage VDS 3 30 50 (V) 2002-01-16 HN1K04FU (Q1, Q2 common) VDS (ON) – ID t – ID 1000 3000 Common source 300 100 50 30 tf ton 100 tr ID VOUT 30 4 V 0 VIN 10 ms 10 5 0.5 toff 300 1 3 10 30 Drain current ID 10 0.3 100 (mA) VIN D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common source VDD = 5 V Ta = 25°C RL Ta = 25°C 50 9 (ns) VGS = 4 V 500 Switching time t Drain-source on voltage VDS (ON) (mV) 1000 1 10 Drain current ID (mA) 50 PD* – Ta 350 Drain power dissipation PD* (mW) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) *: TOTAL rating 4 2002-01-16 HN1K04FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-01-16