ETC HYM71V65M801TX-10P

8Mx64 bits
PC100 SDRAM SO DIMM
based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM71V65M801 X-Series
DESCRIPTION
The Hyundai HYM71V65M801 X-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of
four 8Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP
package on a 144pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each
SDRAM are mounted on the PCB.
The HYM71V65M801 X-Series are Small Outline Dual In-line Memory Modules suitable for easy interchange and
addition of 64Mbytes memory. The HYM71V65M801 X-Series are offering fully synchronous operation referenced to a
positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths
are internally pipelined to achieve very high bandwidth.
FEATURES
• PC100MHz support
• SDRAM internal banks : four banks
• 144pin SDRAM SO DIMM
• Module bank : one physical bank
• Serial Presence Detect with EEPROM
• Auto refresh and self refresh
• 1.00” (25.40mm) Height PCB with Double Sided
components
• 4096 refresh cycles / 64ms
• Single 3.3 ± 0.3V power supply
• All devices pins are compatible with LVTTL interface
• Data mask function by DQM
• Programmable Burst Length and Burst Type
-. 1, 2, 4, 8 or Full Page for Sequential Burst
-. 1, 2, 4 or 8 for Interleave Burst
• Programmable /CAS Latency
-. 2, 3 Clocks
ORDERING INFORMATION
PART NO.
MAX.
FREQUENCY
HYM71V65M801TX-8
125MHz
HYM71V65M801TX-10P
100MHz
HYM71V65M801TX-10S
100MHz
HYM71V65M801LTX-8
125MHz
HYM71V65M801LTX-10P
100MHz
HYM71V65M801LTX-10S
100MHz
INTERNAL
BANK
REF.
POWER
SDRAM
PACKAGE
PLATING
TSOP-II
Gold
Normal
4 Banks
4K
Low Power
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.1/Dec.99
1999 Hyundai MicroElectronics
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
PIN DESCRIPTION
PIN NAME
DESCRIPTION
CK0, CK1
Clock Inputs
The System Clock Input. All other inputs are registered to the
SDRAM on the rising edge of CLK.
CKE0
Clock Enable
Controls internal clock signal and when deactivated, the SDRAM
will be one of the states among power down, suspend or self
refresh.
/S0
Chip Select
Enables or disables all inputs except CK, CKE and DQM.
BA0, BA1
SDRAM Bank Address
A0~A11
Address Inputs
/RAS
Row Address Strobe
/CAS
Column Address Strobe
/WE
Write Enable
DQM0~DQM7
Data Input/Output Mask
Controls output buffers in read mode and masks input data in
write mode.
DQ0~DQ63
Data Input/Output
Multiplexed data input/output pins
VCC
Power Supply (3.3V)
Power supply for internal circuits and input/output buffers
VSS
Ground
Ground
SCL
SPD Clock Input
Serial Presence Detect Clock Input
SDA
SPD Data Input/Output
Serial Presence Detect Data input/output
NC
No Connect
No Connect or Don’ t Use
Rev. 1.1/Dec.99
Select bank to be activated during /RAS activity.
Select bank to be read/written during /CAS activity
Row address : RA0~RA11, Column address : CA0~CA8
Auto-precharge flag : A10
/RAS define the operation.
Refer to the function truth table for details.
/CAS define the operation.
Refer to the function truth table for details.
/WE define the operation.
Refer to the function truth table for details.
2
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
PIN ASSIGNMENTS
FRONT SIDE
BACK SIDE
FRONT SIDE
BACK SIDE
PIN NO.
NAME
PIN NO.
NAME
PIN NO.
NAME
PIN NO.
1
VSS
2
VSS
71
NC
72
NC
3
DQ0
4
DQ32
73
NC
74
*CK1
5
DQ1
6
DQ33
75
VSS
76
VSS
7
DQ2
8
DQ34
77
NC
78
NC
9
DQ3
10
DQ35
79
NC
80
NC
11
13
VCC
DQ4
12
14
VCC
DQ36
81
83
VCC
DQ16
82
84
VCC
DQ48
15
DQ5
16
DQ37
85
DQ17
86
DQ49
17
DQ6
18
DQ38
87
DQ18
88
DQ50
19
21
DQ7
VSS
20
22
DQ39
VSS
89
91
DQ19
VSS
90
92
DQ51
VSS
23
DQM0
24
DQM4
93
DQ20
94
DQ52
25
DQM1
26
DQM5
95
DQ21
96
DQ53
27
VCC
28
VCC
97
DQ22
98
DQ54
29
31
A0
A1
30
32
A3
A4
99
101
DQ23
VCC
100
102
DQ55
VCC
33
A2
34
A5
103
A6
104
A7
35
VSS
36
VSS
105
A8
106
BA0
37
DQ8
38
DQ40
107
VSS
108
VSS
39
41
DQ9
DQ10
40
42
DQ41
DQ42
109
111
A9
A10/AP
110
112
BA1
A11
43
DQ11
44
DQ43
113
VCC
114
VCC
45
VCC
46
VCC
115
DQM2
116
DQM6
47
49
DQ12
DQ13
48
50
DQ44
DQ45
117
119
DQM3
VSS
118
120
DQM7
VSS
51
DQ14
52
DQ46
121
DQ24
122
DQ56
53
DQ15
54
DQ47
123
DQ25
124
DQ57
55
VSS
56
VSS
125
DQ26
126
DQ58
57
59
NC
NC
58
60
NC
NC
127
129
DQ27
VCC
128
130
DQ59
VCC
131
DQ28
132
DQ60
133
DQ29
134
DQ61
Voltage Key
NAME
61
CK0
62
CKE0
135
DQ30
136
DQ62
63
65
VCC
/RAS
64
66
VCC
/CAS
137
139
DQ31
VSS
138
140
DQ63
VSS
67
/WE
68
NC
141
SDA
142
SCL
69
/S0
70
NC
143
VCC
144
VCC
Note : *. CK1 is connected with termination R/C. (Refer to the Block Diagram.)
Rev. 1.1/Dec.99
3
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
BLOCK DIAGRAM
Note : 1. The serial resistor values of DQs are 10 Ohms.
2. The padding capacitance of termination R/C for CK1 is 10pF.
Rev. 1.1/Dec.99
4
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
SERIAL PRESENCE DETECT
BYTE
FUNCTION
NUMBER
DESCRIBED
FUNCTION
-8
-10P
VALUE
-10S
-8
-10P
BYTE0
# of Bytes Written into Serial Memory
at Module Manufacturer
128 Bytes
80h
BYTE1
Total # of Bytes of SPD Memory Device
256 Bytes
08h
BYTE2
Fundamental Memory Type
BYTE3
-10S
SDRAM
04h
# of Row Addresses on This Assembly
12
0Ch
BYTE4
# of Column Addresses on This Assembly
9
09h
BYTE5
# of Module Banks on This Assembly
1 Bank
01h
BYTE6
Data Width of This Assembly
64 Bits
40h
BYTE7
Data Width of This Assembly (Continued)
-
00h
BYTE8
Voltage Interface Standard of This Assembly
BYTE9
SDRAM Cycle Time @ /CAS Latency=3
8ns
10ns
10ns
80h
A0h
A0h
BYTE10
Access Time from Clock @ /CAS Latency=3
6ns
6ns
6ns
60h
60h
60h
BYTE11
DIMM Configuration Type
BYTE12
Refresh Rate/Type
BYTE13
Primary SDRAM Width
BYTE14
Error Checking SDRAM Width
BYTE15
Minimum Clock Delay Back to Back Random
Column Address
BYTE16
Burst Lengths Supported
BYTE17
# of Banks on Each SDRAM Device
BYTE18
SDRAM Device Attributes, CAS # Latency
BYTE19
SDRAM Device Attributes, CS # Latency
BYTE20
SDRAM Device Attributes, Write Latency
BYTE21
SDRAM Module Attributes
LVTTL
1
01h
None
00h
15.625µs
/ Self Refresh Supported
80h
x16
10h
None
00h
tCCD = 1 CLK
01h
1,2,4,8,Full Page
8Fh
4 Banks
04h
/CAS Latency=2,3
06h
/CS Latency=0
01h
/WE Latency=0
01h
Neither Buffered nor Registered
00h
+/-10% voltage tolerance, Burst
Read Single bit Write, Precharge
All, Auto Precharge, Early RAS
Precharge
0Eh
2
BYTE22
SDRAM Device Attributes, General
BYTE23
SDRAM Cycle Time @ /CAS Latency=2
10ns
10ns
12ns
A0h
A0h
C0h
BYTE24
Access Time from Clock @ /CAS Latency=2
6ns
6ns
6ns
60h
60h
60h
BYTE25
SDRAM Cycle Time @ /CAS Latency=1
-
-
-
00h
00h
00h
BYTE26
Access Time from Clock @ /CAS Latency=1
-
-
-
00h
00h
00h
BYTE27
Minimum Row Precharge Time (tRP)
20ns
20ns
20ns
14h
14h
14h
BYTE28
Minimum Row Active to Row Active Delay (tRRD)
16ns
20ns
20ns
10h
14h
14h
BYTE29
Minimum /RAS to /CAS Delay (tRCD)
20ns
20ns
20ns
14h
14h
14h
BYTE30
Minimum /RAS Pulse width (tRAS)
48ns
50ns
50ns
30h
32h
32h
BYTE31
Module Bank Density
BYTE32
Command and Address Signal Input Setup Time
2ns
2ns
2ns
20h
20h
20h
BYTE33
Command and Address Signal Input Hold Time
1ns
1ns
1ns
10h
10h
10h
BYTE34
Data Signal Input Setup Time
2ns
2ns
2ns
20h
20h
20h
BYTE35
Data Signal Input Hold Time
1ns
1ns
1ns
10h
10h
10h
BYTE36
–61
Superset Information (may be used in future)
BYTE62
SPD Revision
BYTE63
Checksum for Bytes 0~62
BYTE64
Manufacturer JEDEC ID Code
BYTE65
~71
....Manufacturer JEDEC ID Code
BYTE72
Manufacturing Location
Rev. 1.1/Dec.99
64MB
10h
-
00h
Intel SPD 1.2A
-
12h
E7h
0Dh
Hyundai JEDEC ID
ADh
Unused
FFh
HEI (Korea)
HEA (United States)
HEU (Europe)
NOTE
3, 8
2Dh
01h
02h
03h
5
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
Continued
BYTE
FUNCTION
NUMBER
DESCRIBED
BYTE73
Manufacturer’ s Part Number (Component)
BYTE74
Manufacturer’ s Part Number (128Mb based)
BYTE75
Manufacturer’ s Part Number (Voltage Interface)
BYTE76
FUNCTION
-8
-10P
VALUE
-10S
-8
-10P
-10S
NOTE
7 (SDRAM)
37h
4, 5
1
31h
4, 5
V (3.3V, LVTTL)
56h
4, 5
Manufacturer’ s Part Number (Data Width)
6
36h
4, 5
BYTE77
....Manufacturer’ s Part Number (Data Width)
5
35h
4, 5
BYTE78
Manufacturer’ s Part Number (Module Type)
M
4Dh
4, 5
BYTE79
Manufacturer’ s Part Number (Memory Depth)
8
38h
4, 5
BYTE80
Manufacturer’ s Part Number (Refresh)
0 (4K Refresh)
30h
4, 5
BYTE81
Manufacturer’ s Part Number (Internal Banks)
1 (4 Banks)
31h
4, 5
BYTE82
Manufacturer’ s Part Number (Package Type)
T (TSOPII)
54h
4, 5
BYTE83
Manufacturer’ s Part Number (Module Type)
X (x16 based)
58h
4, 5
BYTE84
Manufacturer’ s Part Number (Hyphen)
- (Hyphen)
2Dh
BYTE85
Manufacturer’ s Part Number (Min. Cycle Time)
BYTE86
....Manufacturer’ s Part Number (Min. Cycle Time)
Blank
BYTE87
....Manufacturer’ s Part Number (Min. Cycle Time)
Blank
BYTE88
~90
Manufacturer’ s Part Number
BYTE91
BYTE92
BYTE93
Manufacturing Date
BYTE94
....Manufacturing Date
BYTE95
~98
Assembly Serial Number
BYTE99
~125
Manufacturer Specific Data (may be used in
future)
BYTE126
System Frequency Support
BYTE127
Intel Specification Details for 100MHz Support
BYTE128
~256
Unused Storage Locations
8
1
4, 5
1
38h
31h
31h
4, 5
0
0
20h
30h
30h
4, 5
P
S
20h
50h
53h
4, 5
Blanks
20h
4, 5
Revision Code (for Component)
Process Code
-
4, 6
....Revision Code (for PCB)
Process Code
-
4, 6
Work Week
-
3, 6
Year
-
3, 6
Serial Number
-
6
None
00h
100MHz
64h
Refer to Note7
87h
-
87h
7, 8, 9
85h
7, 8, 9
00h
Note: 1. The bank address is excluded.
2. 1,2,4,8 for Interleave Burst Type.
3. BCD adopted.
4. ASCII adopted.
5. Basically HYUNDAI writes Part No. except for ` HYM ` in Byte 73-90 to use the limited 18 bytes from byte 73 to 90 efficiently.
6. Not fixed but dependent.
7. CLK0 connected on the DIMM, TBD junction temp, CL2(3) support, Intel defined Concurrent Auto Precharge support.
8. Refer to Intel SPD Specification Rev.1.2A.
BYTE82~88 for L-Part (HYM71V65M801LTX)
BYTE
FUNCTION
NUMBER
DESCRIBED
FUNCTION
-8
BYTE82
Manufacturer’ s Part Number (Power)
BYTE83
Manufacturer’ s Part Number (Package Type)
BYTE84
Manufacturer’ s Part Number (Module Type)
BYTE85
Manufacturer’ s Part Number (Hyphen)
BYTE86
Manufacturer’ s Part Number (Min. Cycle Time)
BYTE87
....Manufacturer’ s Part Number (Min. Cycle Time)
Blank
BYTE88
....Manufacturer’ s Part Number (Min. Cycle Time)
Blank
Rev. 1.1/Dec.99
-10P
VALUE
-10S
-8
-10P
-10S
NOTE
L (Low Power)
4Ch
4, 5
T (TSOPII)
54h
4, 5
X (x16 based SO DIMM)
58h
4, 5
- (Hyphen)
2Dh
8
1
4, 5
1
38h
31h
31h
4, 5
0
0
20h
30h
30h
4, 5
P
S
20h
50h
53h
4, 5
6
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
0 ~ 70
°C
Ambient Temperature
TA
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on any Pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
IOS
50
MA
Power Dissipation
PD
4
W
Soldering Temperature · Time
TSOLDER
260 · 10
°C · Sec
Note : Operation at above absolute maximum can adversely affect device reliability.
DC OPERATING CONDITION
(TA = 0 to 70°C)
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
NOTE
Power Supply Voltage
VCC
3.0
3.3
3.6
V
1
Input High Voltage
VIH
2.0
3.0
VCC + 0.3
V
1, 2
Input Low Voltage
VIL
– 0.3
0
0.8
V
1, 3
Note : 1. All voltage are referenced to VSS = 0V.
2. VIH (max) is acceptable 5.6V AC pulse width with ≤ 3ns of duration.
3. VIL (min) is acceptable –2.0V AC pulse width with ≤ 3ns of duration.
AC OPERATING CONDITION
(TA = 0 to 70°C, VDD = 3.3 ± 0.3V, VSS = 0V)
PARAMETER
SYMBOL
VALUE
UNIT
2.4 / 0.4
V
1.4
V
AC Input High / Low Level Voltage
VIH / VIL
Input Timing Measurement Reference Level Voltage
Vtrip
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level Voltage
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
CL
*Note
pF
Note : *. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF).
For details, refer to AC/DC output circuit.
Rev. 1.1/Dec.99
7
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
CAPACITANCE
(TA = 25°C, f = 1MHz)
PARAMETER
Input Capacitance
Data Input/Output Capacitance
PIN
SYMBOL
MIN
MAX
TYP.
UNIT
CK0
CIN1
20
40
-
pF
CKE0
CIN2
20
35
-
pF
/S0
CIN3
20
35
-
pF
A0~A11, BA0, BA1
CIN4
20
35
-
pF
/RAS, /CAS, /WE
CIN5
20
35
-
pF
DQM0~DQM7
CIN6
10
20
-
pF
DQ0~DQ63
CI/O
15
20
-
pF
OUTPUT LOAD CIRCUIT
Rev. 1.1/Dec.99
8
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
DC CHARACTERISTICS I
(TA = 0 to 70°C, VDD = 3.3 ± 0.3V)
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTE
Input Leakage Current
ILI
-4
4
uA
1
Output Leakage Current
ILO
-1
1
uA
2
Output High Voltage
VOH
2.4
-
V
IOH = -4mA
Output Low Voltage
VOL
-
0.4
V
IOL = +4mA
Note : 1. VIN = 0 to 3.6V. All other pins are not tested under VIN = 0V.
2. DOUT is disabled. VOUT = 0 to 3.6V.
DC CHARACTERISTICS II
(TA = 0 to 70°C, VDD = 3.3 ± 0.3V, VSS = 0V)
SPEED
PARAMETER
Operating Current
Precharge Standby Current
in Power Down Mode
SYMBOL
Operating
-10P
-10S
480
480
480
UNIT
NOTE
mA
1
Burst Length = 1, One bank active
tRC ≥ tRC(min), IOL = 0mA
IDD2P
CKE ≤ VIL(max), tCK = min
8
mA
IDD2PS
CKE ≤ VIL(max), tCK = ∞
6
mA
IDD2N
CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = min
Input signals are changed one time during
2clks. All other pins ≥ VDD – 0.2V or ≤ 0.2V
80
mA
IDD2NS
CKE ≥ VIH(max), tCK = ∞
Input signals are stable.
40
mA
IDD3P
CKE ≤ VIL(max), tCK = min
28
mA
IDD3PS
CKE ≤ VIL(max), tCK = ∞
28
mA
IDD3N
CKE ≥ VIH(min), /CS ≥ VIH(min), tCK = min
Input signals are changed one time during
2clks. All other pins ≥ VDD – 0.2V or ≤ 0.2V
160
mA
IDD3NS
CKE ≥ VIH(max), tCK = ∞
Input signals are stable.
160
mA
Active Standby Current
in Non Power Down Mode
Burst
Mode
Current
-8
IDD1
Precharge Standby Current
in Non Power Down Mode
Active Standby Current
in Power Down Mode
TEST CONDITION
IDD4
tCK ≥ tCK(min), IOL = 0mA
CL = 3
560
480
480
All banks active
CL = 2
480
480
440
Auto Refresh Current
IDD5
tRRC ≥ tRRC(min), All banks active
Self Refresh Current
IDD6
CKE ≤ 0.2V
mA
1
1080
mA
2
8
mA
3.2
mA
3
Note : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRRC (Refresh /RAS cycle time) is shown at AC CHARACTERISTICS II.
3. L-part (HYM71V65M801LTX)
Rev. 1.1/Dec.99
9
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
AC CHARACTERISTICS I
(AC operating conditions unless otherwise noted)
-8
PARAMETER
/CAS Latency = 3
-10S
SYMBOL
UNIT
MIN
System Clock
Cycle Time
-10P
tCK3
MAX
8
MIN
MAX
10
1000
MIN
NOTE
MAX
10
1000
ns
3
-
ns
I
-
3
-
ns
I
-
6
-
6
ns
2
-
6
-
6
-
3
-
3
-
ns
2
-
2
-
2
-
ns
1
tDH
1
-
1
-
1
-
ns
1
tAS
2
-
2
-
2
-
ns
1
Address Hold Time
tAH
1
-
1
-
1
-
ns
1
CKE Setup Time
tCKS
2
-
2
-
2
-
ns
1
CKE Hold Time
tCKH
1
-
1
-
1
-
ns
1
Command Setup Time
tCS
2
-
2
-
2
-
ns
1
Command Hold Time
tCH
1
-
1
-
1
-
ns
1
CLK to Data Output in Low-Z time
tOLZ
1
-
1
-
1
-
ns
/CAS Latency = 3
tOHZ3
3
6
3
6
3
6
/CAS Latency = 2
tOHZ2
3
6
3
6
3
6
tCK2
10
Clock High Pulse Width
tCHW
3
-
3
-
Clock Low Pulse Width
tCLW
3
-
3
/CAS Latency = 3
tAC3
-
6
/CAS Latency = 2
tAC2
-
6
Data-Out Hold Time
tOH
3
Data-Input Setup Time
tDS
Data-Input Hold Time
Address Setup Time
Access Time
from Clock
CLK to Data
Output
in
High-Z time
/CAS Latency = 2
1000
10
12
ns
Note :
1. Assume tR / tF (input rise and fall time ) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter
2. Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v.
If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter
Rev. 1.1/Dec.99
10
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
AC CHARACTERISTICS II
-8
PARAMETER
Cycle
Operation
-10S
UNIT
MIN
/RAS
Time
-10P
SYMBOL
tRC
MAX
68
MIN
MAX
70
-
MIN
70
-
ns
20
-
ns
100K
50
100K
ns
20
-
20
-
ns
20
-
20
-
ns
-
1
-
1
-
CLK
0
-
0
-
0
-
CLK
tDPL
1
-
1
-
1
-
CLK
tDAL
4
-
3
-
3
-
CLK
DQM to Data-out Hi-Z
tDQZ
2
-
2
-
2
-
CLK
DQM to Data-in Mask
tDQM
0
-
0
-
0
-
CLK
MRS to New Command
tMRD
2
-
2
-
2
-
CLK
Precharge to
Data
Output
Hi-Z
/CAS Latency = 3
tPROZ3
3
-
3
-
3
-
/CAS Latency = 2
tPROZ2
2
-
2
-
2
-
Power Down Exit Time
tPDE
1
-
1
-
1
-
CLK
Self Refresh Exit Time
tSRE
1
-
1
-
1
-
CLK
Refresh Time
tREF
-
64
-
64
-
64
ms
Auto Refresh
NOTE
MAX
-
tRRC
68
70
70
/RAS to /CAS Delay
tRCD
20
-
20
-
/RAS Active Time
tRAS
48
100K
50
/RAS Precharge Time
tRP
20
-
/RAS to /RAS Bank Active Delay
tRRD
16
-
/CAS to /CAS Delay
tCCD
1
Write Command to Data-in Delay
tWTL
Data-in to Precharge Command
Data-in to Active Command
CLK
1
Note : 1. A new command can be given tRRC after self refresh exit.
Rev. 1.1/Dec.99
11
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
OPERATING OPTION TABLE
HYM71V65M801TX-8 / HYM71V65M801LTX-8
/CAS
LATENCY
tRCD
tRAS
tRC
tRP
tAC
tOH
125MHz (8.0ns)
3CLKS
3CLKS
6CLKS
9CLKS
3CLKS
6ns
3ns
100MHz (10.0ns)
2CLKS
2CLKS
5CLKS
7CLKS
2CLKS
6ns
3ns
83MHz (12.0ns)
2CLKS
2CLKS
4CLKS
6CLKS
2CLKS
6ns
3ns
HYM71V65M801TX-10P / HYM71V65M801LTX -10P
/CAS
LATENCY
tRCD
tRAS
tRC
tRP
tAC
tOH
100MHz (10.0ns)
2CLKS
2CLKS
5CLKS
7CLKS
2CLKS
6ns
3ns
83MHz (12.0ns)
2CLKS
2CLKS
5CLKS
7CLKS
2CLKS
6ns
3ns
66MHz (15.0ns)
2CLKS
2CLKS
4CLKS
6CLKS
2CLKS
6ns
3ns
HYM71V65M801TX-10S / HYM71V65M801LTX -10S
/CAS
LATENCY
tRCD
tRAS
tRC
tRP
tAC
tOH
100MHz (10.0ns)
3CLKS
2CLKS
5CLKS
7CLKS
2CLKS
6ns
3ns
83MHz (12.0ns)
2CLKS
2CLKS
5CLKS
7CLKS
2CLKS
6ns
3ns
66MHz (15.0ns)
2CLKS
2CLKS
4CLKS
6CLKS
2CLKS
6ns
3ns
Rev. 1.1/Dec.99
12
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
COMMAND TRUTH TABLE
CKEn
/CS
/RAS
/CAS
/WE
DQM
Mode Register Set
H
X
L
L
L
L
X
OP code
H
X
X
X
No Operation
H
X
X
X
L
H
H
H
Bank Active
H
X
L
L
H
H
X
H
X
L
H
L
H
X
ADDR
A10/
AP
CKEn-1
RA
BA
NOTE
V
Read
L
CA
V
Read with Autoprecharge
H
Write
L
H
X
L
H
L
L
X
CA
V
Write with Autoprecharge
H
Precharge All Banks
H
X
L
L
H
L
X
Precharge Selected Bank
Burst Stop
H
X
DQM
H
Auto Refresh
H
H
L
L
L
Entry
H
L
L
L
H
X
Exit
L
H
H
H
H
L
X
X
V
X
H
X
X
L
H
X
X
X
X
Self Refresh
Entry
L
X
L
V
X
X
L
H
H
H
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
L
Precharge
Power Down
H
X
1
X
X
Exit
Entry
L
H
H
X
L
X
Clock Suspend
X
Exit
L
H
X
X
Note : 1. Existing Self Refresh occurs by asynchronously bringing CKE from low to high.
2. X = Don’ t care, H = Logic High, L = logic Low, BA = Bank Address, CA = Column Address, OP code = Operand code,
NOP = No operation
Rev. 1.1/Dec.99
13
PC100 SDRAM SO DIMM
HYM71V65M801 X-Series
PACKAGE DIMENSIONS
Rev. 1.1/Dec.99
14