DC COMPONENTS CO., LTD. I772 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver. TO-251 Pinning .268(6.80) .252(6.40) 1 = Base 2 = Collector 3 = Emitter .022(0.55) .018(0.45) .217(5.50) .205(5.20) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Current (pulse) IC -7 A Base Current (DC) IB -600 mA Total Power Dissipation(TC=25 C) PD 10 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .063(1.60) .055(1.40) 2 .284(7.20) .268(6.80) 1 2 3 .059(1.50) .035(0.90) .035 Max (0.90) .256 Min (6.50) .024(0.60) .018(0.45) .032 Max (0.80) .181 Typ (4.60) .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO -40 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO -30 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO -5 - - V IE=-10µA, IC=0 IC=-100µA, IE=0 Collector Cutoff Current ICBO - - -1 µA VCB=-30V, IE=0 Emitter Cutoff Current IEBO - - -1 µA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A Base-Emitter Saturation Voltage(1) VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A hFE1 30 - - - IC=-20mA, VCE=-2V hFE2 100 - 500 - fT - 80 - MHz - 55 - pF DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Cob 380µs, Duty Cycle 2% Classification of hFE2 Rank Q P E Range 100~200 160~320 250~500 IC=-1A, VCE=-2V IC=-0.1A, VCE=-5V, f=100MHz VCB=-10V, f=1MHz