INFINEON IPI50R380CE

MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS CE
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Data Sheet
Rev. 2.0, 2010-08-27
Final
Industrial & Multimarket
500V CoolMOS™ CE Power Transistor
1
IPP50R380CE, IPA50R380CE
IPI50R380CE
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ CE series combines
the experience of the leading SJ MOSFET supplier with high class
innovation. The resulting devices provide all benefits of a fast switching
SJ MOSFET while not sacrificing ease of use. Extremely low switching
and conduction losses make switching applications even more efficient,
more compact, lighter, and cooler.
drain
pin 2
Features
•
•
•
•
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC1) qualified, Pb-free plating, Halogen free
gate
pin 1
source
pin 3
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.38

Qg,typ
32
nC
ID,pulse
30
A
Eoss @ 400V
2.8
µJ
Body diode di/dt
500
A/µs
Type / Ordering Code
Package
IPP50R380CE
PG-TO220
IPA50R380CE
PG-TO220 FullPAK
IPI50R380CE
PG-TO262
Marking
Related Links
IFX Design tools
5R380CE
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Table of Contents
Table of Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet
3
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Maximum ratings
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Continuous drain current
1)
Values
ID
Min.
Typ.
Max.
-
-
10.6
Unit
Note / Test Condition
A
TC= 25 °C
TC= 100°C
6.7
2)
Pulsed drain current
ID,pulse
-
-
30
A
TC=25 °C
Avalanche energy, single pulse
EAS
-
-
210
mJ
ID=1.8 A,VDD=50 V
(see table 21)
Avalanche energy, repetitive
EAR
-
-
0.32
Avalanche current, repetitive
IAR
-
-
1.8
A
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480 V
Gate source voltage
VGS
-20
-
20
V
static
-30
ID=1.8 A,VDD=50 V
30
AC (f>1 Hz)
Power dissipation for FullPAK
Ptot
-
-
31
W
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
50
Ncm
M2.5 screws
Mounting torque
TO-220 FullPAK
Continuous diode forward current
2)
Diode pulse current
Reverse diode dv/dt
3)
TC=25 °C
IS
-
-
9.2
A
TC=25 °C
IS,pulse
-
-
30
A
TC=25 °C
dv/dt
-
-
15
V/ns
VDS=0...480 V,ISD  ID,
Tj=125 °C
500
A/µs
(see table 22)
dif/dt
Maximum diode commutation
speed3)
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Table 3
Thermal characteristics TO-220FullPAK
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
4.3
Thermal resistance, junction ambient
RthJA
-
-
80
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Final Data Sheet
4
Note /
Test Condition
°C/W
leaded
°C
1.6 mm (0.063 in.)
from case for 10 s
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Thermal characteristics
3
Thermal characteristics
Table 3
Thermal characteristics TO-220 & TO-262
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
1.5
Thermal resistance, junction ambient
RthJA
-
-
62
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Table 4
Note /
Test Condition
°C/W
leaded
°C
1.6 mm (0.063 in.)
from case for 10 s
Unit
Note /
Test Condition
Thermal characteristics TO-220FullPAK
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
4.0
Thermal resistance, junction ambient
RthJA
-
-
80
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Final Data Sheet
5
°C/W
leaded
°C
1.6 mm (0.063 in.)
from case for 10 s
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Table 5
Static characteristics
Parameter
Symbol
Drain-source breakdown voltage V(BR)DSS
Values
Min.
Typ.
Max.
500
-
-
Unit
Note / Test Condition
V
VGS=0 V, ID=0.25 mA
Gate threshold voltage
VGS(th)
2.5
3
3.5
Zero gate voltage drain current
IDSS
-
-
1
-
10
-
-
-
100
nA
VGS=20 V, VDS=0 V
-
0.34
0.38

VGS=10 V, ID=3.8 A,
Tj=25 °C
-
0.89
-
-
7.5
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate resistance
Table 6
RG
VDS=VGS, ID=0.32 mA
VDS=500 V, VGS=0 V,
Tj=25 °C
µA
VDS=500 V, VGS=0 V,
Tj=150 °C
VGS=10 V, ID=3.8 A,
Tj=150 °C

f=1 MHz, open drain
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=100 V,
f=1 MHz
Input capacitance
Ciss
-
700
-
Output capacitance
Coss
-
46
-
Effective output capacitance,
energy related1)
Co(er)
-
30
-
VGS=0 V,
VDS=0...480 V
Effective output capacitance, time
related2)
Co(tr)
-
136
-
ID=constant, VGS=0 V
VDS=0...480V
Turn-on delay time
td(on)
-
11
-
Rise time
tr
-
9
-
Turn-off delay time
td(off)
-
56
-
ns
VDD=400 V,
VGS=13 V, ID=4.8A,
RG= 3.4 
(see table 20)
tf
8
Fall time
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480 V
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480 V
Final Data Sheet
6
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics
Table 7
Gate charge characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
IGate to source charge
Qgs
-
4
-
Gate to drain charge
Qgd
-
16
-
Gate charge total
Qg
-
32
-
Gate plateau voltage
Vplateau
-
5.4
-
Table 8
Unit
Note /
Test Condition
nC
VDD=480 V, ID=4.8 A,
VGS=0 to 10 V
V
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Diode forward voltage
VSD
-
0.9
-
V
VGS=0 V, IF=4.8A,
Tj=25 °C
Reverse recovery time
trr
-
290
-
ns
Reverse recovery charge
Qrr
-
3.3
-
µC
Peak reverse recovery current
Irrm
-
21
-
A
VR=400 V, IF=4.8 A,
diF/dt=100 A/µs
(see table 22)
Final Data Sheet
7
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
5
Electrical characteristics diagrams
Electrical characteristics diagrams
Table 9
Power dissipation
non FullPAK
Power dissipation
FullPAK
Ptot = f(TC)
Ptot = f(TC)
Table 10
Max. transient thermal impedance
non FullPAK
Max. transient thermal impedance
FullPAK
Z(thJC)=f(tp); parameter: D=tp/T
Final Data Sheet
Z(thJC)=f(tp); parameter: D=tp/T
8
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics diagrams
Table 11
Safe operating area TC=25 °C
non FullPAK
Safe operating area TC=25 °C
FullPAK
ID=f(VDS); TC=25 °C; D=0; parameter tp
ID=f(VDS); TC=25 °C; D=0; parameter tp
Table 12
Safe operating area TC=80 °C
non FullPAK
Safe operating area TC=80 °C
FullPAK
ID=f(VDS); TC=80 °C; D=0; parameter tp
ID=f(VDS); TC=80 °C; D=0; parameter tp
Final Data Sheet
9
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics diagrams
Table 13
Typ. output characteristics Tj=25 °C
Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 14
Typ. drain-source on-state resistance
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=3.8 A; VGS=10 V
Final Data Sheet
10
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics diagrams
Table 15
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
VGS=f(Qgate), ID=4.8A pulsed
Table 16
Avalanche energy
Min. drain-source breakdown voltage
EAS=f(Tj); ID=1.8 A; VDD=50 V
VBR(DSS)=f(Tj); ID=0.25 mA
Final Data Sheet
11
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Electrical characteristics diagrams
Table 17
Typ. capacitances
Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz
EOSS=f(VDS)
Table 18
Forward characteristics of reverse diode
IF=f(VSD); parameter: Tj
Final Data Sheet
12
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Test circuits
6
Test circuits
Table 19
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
VDS
90%
VDS
VGS
10%
VGS
td(on)
td(off)
tr
ton
Table 20
tf
toff
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
VDS
ID
Table 21
Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
i
v
diF /d t
R G1
ΙF
VDS
RG2
Ι RRM
trr = tS + tF
Q rr = Q S + Q F
trr
tS
tF
QS
10% Ι RRM
QF
d irr /d t
90% Ι RRM
RG1 = RG2
Final Data Sheet
v
13
t
VRRM
SIL00088
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Package outlines
7
Package outlines
Figure 1
Outlines TO-220, dimensions in mm/inches
Final Data Sheet
14
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Package outlines
Figure 2
Outlines TO-220 FullPAK, dimensions in mm/inches
Final Data Sheet
15
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Package outlines
Figure 3
Outlines TO-262, dimensions in mm/inches
Final Data Sheet
16
Rev. 2.0, 2010-08-27
500V CoolMOS™ CE Power Transistor
IPx50R380CE
Revision History
8
Revision History
CoolMOS CE 500V CoolMOS™ CE Power Transistor
Revision History: 2010-08-27, Rev. 2.0
Previous Revision:
Revision
Subjects (major changes since last revision)
2.0
Release of final data sheet
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Edition 2010-08-27
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Final Data Sheet
17
Rev. 2.0, 2010-08-27