PD- 91705A
IRF7322D1
FETKY MOSFET / Schottky Diode
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Co-packaged HEXFET® Power MOSFET
and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = -20V
RDS(on) = 0.058Ω
Schottky Vf = 0.39V
Top Vie w
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
S O -8
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
Maximum
Units
-5.3
-4.3
-43
2.0
1.3
16
± 12
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient ➃
Maximum
Units
62.5
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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3/17/99
2
IRF7322D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
—
—
-0.70
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.049
0.082
—
5.9
—
—
—
—
19
4.0
7.7
15
40
42
49
780
470
240
Max. Units
Conditions
—
V
V GS = 0V, ID = -250µA
0.062
VGS = -4.5V, ID = -2.9A
Ω
0.098
VGS = -2.7V, ID = -1.5A
—
V
V DS = VGS, ID = -250µA
—
S
VDS = -10V, ID = -1.5A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 55°C
100
VGS = -12.0V
nA
-100
V GS = 12.0V
29
ID = -2.9A
6.1
nC
VDS = -16V
12
VGS = -4.5V (see figure 6) ➂
22
VDD = -10V
60
ID = -2.9A
ns
63
RG = 6.0Ω
73
R D = 3.4Ω ➂
—
VGS = 0V
—
pF
VDS = -15V
—
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Body Diode Forward Voltage
trr
Reverse Recovery Time (Body Diode)
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
—
—
-2.5
A
—
—
-21
—
—
-1.2
V
— 47
71
ns
— 49
73
nC
Conditions
TJ = 25°C, IS = -2.9A, VGS = 0V
TJ = 25°C, IF = -2.9A
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
IF(av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
2.7
A
2
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
2
Max. Units
0.50
0.62
V
0.39
0.57
0.02
mA
8
92
pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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IRF7322D1
Power Mosfet Characteristics
100
100
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
TOP
TOP
10
-1.50V
1
20µs PULSE WIDTH
TJ = 25 ° C
0.1
0.1
1
10
-1.50V
1
0.1
0.1
10
2.0
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
-I D , Drain-to-Source Current (A)
100
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -10V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
4.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
1.5
20µs PULSE WIDTH
TJ = 150 °C
I D = -2.9 A
1.5
1.0
0.5
V G S = -4 .5V
0.0
5.0
-60
-40
-20
0
20
40
60
80
100 120
A
140 160
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7322D1
Power Mosfet Characteristics
V GS
C is s
C rs s
C o ss
C , Capacitance (pF)
1200
1000
=
=
=
=
10
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
-V G S , Gate-to-Source Voltage (V)
1400
C iss
800
C oss
600
400
C rss
200
0
A
1
10
I D = -2.9A
V D S = -16V
8
6
4
2
A
0
100
0
5
-VD S , D rain-to-S ourc e V oltage (V )
20
25
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
15
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 25 ° C
1
0.1
0.2
4
10
0.6
0.8
1.0
1.2
10
1ms
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.4
100us
1.4
1
0.1
1
10
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
100
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IRF7322D1
Power Mosfet Characteristics
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.08
0.6
V G S = -2.7V
0.4
0.2
V G S = -4.5V
0.0
0
4
8
12
16
-I D , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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20
A
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.8
0.07
0.06
I D = -5.3A
0.05
0.04
0.03
A
0.0
2.0
4.0
6.0
8.0
V G S , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
IRF7322D1
Schottky Diode Characteristics
10
100
TJ = 150°C
In sta n tan e o us Fo rw a rd C urre nt - I F (A )
Reverse Current - IR (mA)
10
125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
A
0.0001
0
4
8
12
16
20
1
T J = 1 50 °C
Reverse Voltage - V R (V)
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
T J = 1 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forwa rd V o lta ge D ro p - V
(V )
Forward Voltage Drop - VFFM
(V)
Fig. 12 - Typical Forward Voltage Drop Characteristics
A llow a b le A m b ie n t T em p e ra ture - (° C )
T J = 2 5 °C
160
V r = 20 V
R t hJA = 6 2 .5 °C /W
Sq uare w ave
140
120
100
80
D
D
D
D
D
60
40
DC
= 3 /4
= 1 /2
=1 /3
= 1 /4
= 1 /5
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A v e ra ge F orw a rd C u rre nt - I F (AV ) (A )
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7322D1
SO-8 Package Details
D IM
D
-B -
5
E
-A -
5
θ
8
7
6
5
1
2
3
4
e
6X
H
0.2 5 (.0 10 )
M
A
A M
θ
e1
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
K x 45 °
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
Part Marking
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IRF7322D1
Tape and Reel
T E R M IN A L N U M B E R 1
12 .3 ( .484 )
11 .7 ( .461 )
8.1 ( .31 8 )
7.9 ( .31 2 )
F E E D D IR E C T IO N
N OTE S :
1 . C ON TR O LL IN G D IM E N S ION : M IL LIM E TE R.
2 . A L L D IM E N S ION S A RE S H O W N IN M IL L IM E TE R S (INC H E S ).
3 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -54 1 .
33 0.00
(12 .992 )
M AX .
14.4 0 ( .5 66 )
12.4 0 ( .4 88 )
NOTES :
1. C O N T R O LLIN G D IM E N S IO N : M ILL IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -481 & E IA -541.
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Data and specifications subject to change without notice . 3/99
8
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