ETC IRF7811

PD - 93812
PD - 93813
IRF7809/IRF7811
IRF7809/IRF7811
Provisional Datasheet
• N-Channel Application-Specific MOSFETs
HEXFET® Chipset for DC-DC Converters
• Ideal for CPU Core DC-DC Converters
• New CopperStrapTM Interconnect for Lower
Electrical and Thermal Resistance
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high
current applications
Description
These new devices employ advanced HEXFET® Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make them ideal for
high efficiency DC-DC converters that power the latest
generation of mobile microprocessors.
The IRF7809/IRF7811 employs a newCopperStrapTM
interconnect technology pioneered by International
Rectifier to dramatically improve the electrial & thermal
resistance contribution of the package. The new
CopperStrap SO-8 power MOSFETs are capable of
current ratings over 17A and power dissipation of 3.5W
@ 25°C ambient conditions, thereby reducing the need
for paralleled devices, improving efficiency and
reliability and reducing board space.
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
T o p V ie w
SO-8
DEVICE RATINGS
IRF7809
IRF7811
30V
28V
RDS(on)
7.5 mΩ
11 mΩ
QG
77.5 nC
23 nC
Qsw
23.9 nC
7 nC
Qoss
30 nC
31 nC
VDS
Absolute Maximum Ratings
Parameter
Symbol
IRF7809
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TL = 90°C
Pulsed Drain Current
Power Dissipation
ID
IDM
TA = 25°C
Units
28
V
±12
17.6
14
16.3
13
100
100
PD
3.5
TJ, TSTG
–55 to 150
TL = 90°C
Junction & Storage Temperature Range
IRF7811
A
W
3.0
°C
Continuous Source Current (Body Diode)
IS
2.5
2.5
Pulsed Source Current
ISM
50
50
A
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
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R θJA
R θJL
Max.
35
20
Units
°C/W
°C/W
1
1/19/00
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IRF7809/IRF7811
Electrical Characteristics
IRF7809
Parameter
Drain-to-Source
Breakdown Voltage*
BVDSS
Static Drain-Source
on Resistance*
RDS(on)
Gate Threshold Voltage*
VGS(th)
Drain-Source Leakage
Current*
IDSS
IRF7811
Min
Typ
Max
Min
Typ
30
–
–
28
–
–
V
6
7.5
9
11
mΩ
V
VDS = VGS,ID = 250µA
30
30
µA
VDS = 24V, VGS = 0
150
150
1.0
Max Units
1.0
Current*
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, I D = 15A‚
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current*
IGSS
Total Gate Chg Cont FET*
QG
66.7
86.6
Total Gate Chg Sync FET*
QG
59.6
77.5
Pre-Vth
Gate-Source Charge
QGS1
14
2.7
Post-Vth
Gate-Source Charge
QGS2
4
1.3
Gate to Drain Charge
QGD
12.2
4.5
Switch Chg(Qgs2 + Qgd)*
Qsw
18.4
24
5.8
7.0
Output Charge*
Qoss
25
30
26
31
Gate Resistance
RG
1.5
1.9
Turn-on Delay Time
td (on)
17
10
Rise Time
tr
10
5
±100
±100
19
23
17
20.5
nA
VGS = ±12V
VGS=5V, ID=15A, VDS=16V
VGS = 5V, VDS< 100mV
VDS = 16V, ID = 15A
nC
VDS = 16V, VGS = 0
Ω
VDD = 16V, ID = 15A
ns
Turn-off Delay Time
td (off)
39
19
Fall Time
tf
19
8
Input Capacitance
Ciss
–
7300
–
–
1800
–
Output Capacitance
Coss
–
900
–
–
900
–
Reverse Transfer Capacitance Crss
–
350
–
–
60
–
Typ
Max
Min
Typ
VGS = 5V
Clamped Inductive Load
pF
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min
Diode Forward
Voltage*
VSD
Reverse Recovery
Charge„
Qrr
Reverse Recovery
Charge (with Parallel
Schottky)„
Qrr(s)
1.0
94
Max Units
1.0
82
V
nC
Conditions
IS = 15A‚, VGS = 0V
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
87
74
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes:

‚
ƒ
„
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Devices are 100% tested to these parameters.
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IRF7809/IRF7811
SO-8 Package Outline
Part Marking Information
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IRF7809/IRF7811
SO-8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2.3 ( .4 84 )
1 1.7 ( .4 61 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TE S :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.0 0
(12 .9 92 )
MAX.
14 .4 0 ( .5 6 6 )
12 .4 0 ( .4 8 8 )
NOTE S :
1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 3-30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171-0021 Japan Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:1 Kim Seng Promenade,Great World City West Tower, 13-11,Singapore 237994 Tel:65 838 4630
IR TAIWAN : 16F, Suite B, 319, Sec.2, Tun Hwa South Road, Taipei 10673, Taiwan, R.O.C. Tel : 886-2-2739-4230
http://www.irf.com/ Data and specifications subject to change without notice. 1/00
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