ETC IRG4RC10STRR

PD - 91732A
IRG4RC10S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Extremely low voltage drop; 1.0V typical at 2A, 100°C
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-252AA package
VCES = 600V
VCE(on) typ. = 1.10V
G
@VGE = 15V, IC = 2.0A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
D-PAK
TO-252AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
600
14
8.0
18
18
± 20
110
38
15
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Typ.
Max.
–––
–––
0.3 (0.01)
3.3
50
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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IRG4RC10S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage „ 18
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage — 0.64 —
V/°C VGE = 0V, IC = 1.0mA
VGE = 15V
— 1.58 1.7
IC = 8.0A
Collector-to-Emitter Saturation Voltage
— 2.05 —
IC = 14A
See Fig.2, 5
V
— 1.68 —
IC = 8.0A , TJ = 150°C
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-9.5
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance …
3.7
5.5
—
S
VCE = 100V, IC = 8.0A
—
—
250
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
µA
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
15
22
IC = 8.0A
2.4 3.6
nC
VCC = 400V
See Fig. 8
6.5 9.8
VGE = 15V
25
—
28
—
TJ = 25°C
ns
630 950
IC = 8.0A, VCC = 480V
710 1100
VGE = 15V, RG = 100Ω
0.14 —
Energy losses include "tail"
2.58 —
mJ See Fig. 9, 10, 14
2.72 4.3
24
—
TJ = 150°C,
31
—
IC = 8.0A, VCC = 480V
ns
810
—
VGE = 15V, RG = 100Ω
1300 —
Energy losses include "tail"
3.94 —
mJ See Fig. 11, 14
7.5
—
nH
Measured 5mm from package
280
—
VGE = 0V
30
—
pF
VCC = 30V
See Fig. 7
4.0
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,
(See fig. 13a)
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4RC10S
3.0
For both:
Triangular wave:
Load Current ( A )
Duty cycle: 50%
TJ = 125˚C
Tsink= 90˚C
Gate drive as specified
Power Dissipation = 0.70W
Clamp voltage:
80% of rated
2.0
Square wave:
60% of rated
voltage
1.0
Ideal diodes
A
0.0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 °C
TJ = 150 °C
10
1
0.8
V GE = 15V
20µs PULSE WIDTH
1.2
1.6
2.0
2.4
2.8
3.2
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
I C , Collector Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
V CC = 50V
5µs PULSE
PULSEWIDTH
WIDTH
1
6
8
10
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4RC10S
3.00
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
16
VGE = 15V
80 us PULSE WIDTH
I C = 16 A
2.50
12
2.00
8
IC =
8A
IC =
4A
1.50
4
0
25
50
75
100
125
150
1.00
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
TC , Case Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4RC10S
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
400
Cies
300
Coes
200
Cres
100
20
VGE , Gate-to-Emitter Voltage (V)
500
0
1
10
15
10
5
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
2.7
2.6
20
40
60
80
RR
Gate Resistance
Resistance(Ohm)
(Ω)
GG ,, Gate
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10
15
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 480V
V GE = 15V
TJ = 25 °C
I C = 8.0A
0
5
Q G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
2.8
VCC = 400V
I C = 8A
100
RG = Ohm
100Ω
VGE = 15V
VCC = 480V
IC = 16 A
10
IC =
8A
IC =
4A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4RC10S
RG
TJ
VCC
10
VGE
100
100 Ω
= Ohm
= 150 ° C
= 480V
= 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
12
8
6
4
VGE = 20V
T J = 125 oC
10
2
SAFE OPERATING AREA
1
0
0
4
8
12
1
16
10
Fig. 11 - Typical Switching Losses vs.
Collector Current
L
1000
Fig. 12 - Turn-Off SOA
D .U .T.
VC *
50V
100
VCE , Collector-to-Emitter Voltage (V)
I C , Collector Current (A)
RL =
0 - 480V
10 0 0V
480V
4 X I C@25°C
480µF
960V

‚
* Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax )
* Note: Due to the 5 0V pow e r supply, puls e w idth and inductor
w ill incre as e to obta in rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V

‚
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ƒ
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IRG4RC10S

‚
90 %
10 %
ƒ
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.09 4)
2 .1 9 (.08 6)
6.73 (.2 65)
6.35 (.2 50)
-A1.2 7 (.050 )
0.8 8 (.035 )
5.46 (.2 15 )
5.21 (.2 05 )
1.14 (.0 45)
0.89 (.0 35)
0.5 8 (.02 3)
0.4 6 (.01 8)
4
6.45 (.2 45 )
5.68 (.2 24 )
6.2 2 (.245 )
5.9 7 (.235 )
1.02 (.0 40)
1.64 (.0 25)
1
2
1 0.42 (.4 10 )
9 .4 0 (.37 0)
LEAD ASSIGNMENTS
3
0.51 (.0 20 )
M IN.
-B1.5 2 (.0 60 )
1.1 5 (.0 45 )
3X
1 .1 4 (.04 5)
2 X 0 .7 6 (.03 0)
0.8 9 (.035 )
0.6 4 (.025 )
0 .25 (.01 0)
2 .28 (.09 0)
4.5 7 (.1 80 )
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M A M B
LE AD A1SS
IG N M E NTS
- GATE
1 -2 G- ATE
COLLECTOR
2 - D RA IN
3 - EMITTER
3 - SO U R C E
4 - COLLECTOR
4 - D RA IN
0 .58 (.0 23)
0 .46 (.0 18)
N O TE S:
1 D IM EN S IO N IN G & TO LE R AN C IN G PE R A N SI Y 14 .5M , 1 982 .
2 C O N TR O LLING D IM EN S IO N : INC H .
3 C O N FO R M S TO JED E C O U TLIN E TO -25 2A A.
4 D IM EN S IO N S S H O W N AR E B EF O RE SO L D ER D IP,
SO L D ER D IP M AX. +0 .16 (.00 6).
7
IRG4RC10S
Tape & Reel Information
TO-252AA
TR
TRR
1 6.3 ( .641 )
1 5.7 ( .619 )
12 .1 ( .4 76 )
11 .9 ( .4 69 )
F E E D D IR E C T IO N
TRL
16 .3 ( .641 )
15 .7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
F E E D D IR E C T IO N
NO T ES :
1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R .
2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
13 IN C H
16 m m
NOTES :
1. O U T LIN E C O N F O R M S T O E IA -481 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
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